INFINEON TLE 4209 User Manual
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DC Motor Driver for Servo Driver Applications TLE4209
1 Overview
1.1 Features
• Optimized for headlight beam control applications
• Delivers up to 0.8A
• Low saturation voltage;
typ. 1.2V total @25 °C; 0.4A
• Output protected against short circuit
• Overtemperature protection with hysteresis
• Over- and undervoltage lockout
• No crossover current
• Internal clamp diodes
1.2 Description
The TLE 4209 is a fully protected H-Bridge Driver designed specifically for automotive
headlight beam control and industrial servo control applications.
The part is built using Infineons bipolar high voltage power technology DOPL.
The device is available in a P-DIP-8-4 package.
The servo-loop-parameter pos.- and neg. Hysteresis, pos.- and neg. deadband and
angle-amplification are programmable with external resitors.
An internal window-comparator controls the input line. In the case of a fault condition,
like short circuit to GND, short circuit to supply-voltage, and broken wire, the
TLE 4209 stops the motor immediately (brake condition).
Furthermore the built in features like over- and undervoltage-lockout, short-circuitprotection and over-temperature-protection will open a wide range of automotive- and
industrial applications.
Type Package
TLE4209 P-DIP-8-4
Data Sheet 1 2000-09-05
TLE4209
1.3 Pin Definitions and Functions
Pin No.
Symbol Function
P-DIP-8-4
1 FB Feedback Input
2 HYST Hysteresis I/O
3 OUT1 Power Output 1
4 V
S
Power Supply Voltage
5 OUT2 Power Output 2
6 GND Ground
7 RANGE Range Input
8 REF Reference Input
P-DIP-8-4
Overview
Figure1 Pin Configuration
(top view)
Data Sheet 2 2000-09-05
TLE4209
1.4 Functional Block Diagram
Overview
Figure 2 Block Diagram
Data Sheet 3 2000-09-05
TLE4209
1.5 Absolute Maximum Ratings
Parameter Symbol Limit Values Unit Remarks
min. max.
Voltages
Supply voltage V
Supply voltage V
Logic input voltages
V
S
S
I
– 0.3 45 V –
– 1 – V t < 0.5 s; IS > – 2 A
– 0.3 20 V –
(FB, REF, RANGE, HYST)
Currents
Output current (OUT1, OUT2) I
Output current (Diode) I
OUT
OUT
– – A internally limited
–1 1 A –
Overview
Input current
(FB, REF, RANGE, HYST)
I
IN
– 2
– 6
2
6
mA
mA t < 2 ms; t/T < 0.1
Temperatures
Junction temperature T
Storage temperature T
j
stg
– 40 150 °C –
– 50 150 °C –
Thermal Resistances
Junction ambient (P-DIP-8-4) R
thjA
100 K/W –
Note: Stresses above those listed here may cause permanent damage to the device.
Exposure to absolute maximum rating conditions for extended periods may affect
device reliability.
Data Sheet 4 2000-09-05
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