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Preliminary Specification, V 1.1, October 2004
TDA 5221
ASK/FSK Single Conversion Receiver
Version 1.1
Wireless Control
Components
Never stop thinking.
TDA 5221
Revision History:2004-10-20V 1.1
Previous Version:none
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The IC is a very low power consumption single chip FSK/ASK Superheterodyne
Receiver (SHR) for the frequency band 300 to 340 MHz. The IC offers a high level of
integration and n eeds only a few external components. The device c onta ins a l ow n ois e
amplifier (LNA), a double balanced mixer, a fully integrated VCO, a PLL synthesiser, a
crystal oscillator, a limiter w ith RSSI gene rator, a PLL FSK demod ulator , a data fil ter, an
advanced data comparator (slicer) with selection between two threshold modes and a
peak detector. Additionally there is a power down feature to save current and extend
battery life, and two selectable alternatives of generating the data slicer threshold.
1.2Features
•Low supply current (Is = 6.4 mA typ. in FSK mode, Is = 5.6 mA typ. in ASK mode)
•Supply voltage range 5V ±10%
•Power down mode with very low supply current (50nA typ.)
•FSK and ASK demodulation capability
•Fully integrated VCO and PLL Synthesiser
•ASK sensitivity better than -110 dBm over specified temperature range (- 40 to
+105°C)
•Selectable frequency ranges 300-320 MHz and 320-340 MHz
•Switchable between two different frequency channels (see Section 2.4.3)
•Limiter with RSSI generation, operating at 10.7MHz
•2nd order low pass data filter with external capacitors
•Data slicer with selection between two threshold modes (see Section 2.4.8)
•FSK sensitivity better than -102 dBm over specified temperature range (- 40 to
+105°C)
1.3Application
•Keyless Entry Systems
•Remote Control Systems
•Alarm Systems
•Low Bitrate Communication Systems
Preliminary Specification6V 1.1, 2004-10-20
TDA 5221
2Functional Description
2.1Pin Configurat ion
VCC
LNI
LNO
VCC
MI
MIX
IF O
VDD
1
2
3
4
5
6
7
8
9
10
11
12
13
14
TD A 5221
CRST1
TAGC
AGND
AGND
FSEL
DGND
28
27
26
25
24
23
22
21
20
19
18
17
16
15
Functional Description
CRST2
PDW N
PDO
DATA
3VO UT
THRES
FFB
OPP
SLN
SLP
LIMX
LIM
SSEL
MSEL
Figure 1Pin Configuration
Preliminary Specification7V 1.1, 2004-10-20
TDA 5221
Functional Description
2.2Pin Definition and Functions
Table 1Pin Defintion and Function
Pin
No.
1CRST1External Crystal
2VCC5V Supply
3LNILNA Input
SymbolEquivalent I/O SchematicFunction
Connector 1
4.15V
1
50uA
57uA
3
500uA
4k
1k
Preliminary Specification8V 1.1, 2004-10-20
TDA 5221
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
4TAGCAGC Time
4.3V
3uA
4
1k
1.4uA
1.7V
Constant Control
5AGNDAnalogue
Ground Return
6LNOLNA Output
5V
1k
6
7VCC5V Supply
Preliminary Specification9V 1.1, 2004-10-20
TDA 5221
.
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
8
9
MI
MIX
2k2k
8
400uA
Mixer Input
1.7V
Complementary
Mixer Input
9
10AGNDAnalogue
Ground Return
11FSELFrequency
Selector
1
11
40k
12IFO10.7 MHz IF
Mixer Output
300uA
2.2V
12
60
4.5k
13DGNDDigital Ground
Return
Preliminary Specification10V 1.1, 2004-10-20
TDA 5221
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
14VDD5V Supply (PLL
Counter Circuity)
15MSELASK/FSK
Modulation
Format Sector
1.2V
15
40k
16SSELData Slicer
Reference Level
Sector
1.2V
40k
Limiter Input
2.4V
17
16
LIM
18
LIMX
17
18
15k
330
15k
Complementary
Limiter Input
75uA
Preliminary Specification11V 1.1, 2004-10-20
TDA 5221
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
19SLPData Slicer
Positive Input
15uA
19
100
3k
80µA
20SLNData Slicer
Negative Input
5uA
20
10k
21OPPOpAmp
Noninverting
Input
5uA
21
200
22FFBData Filter
Feedback Pin
5uA
22
Preliminary Specification12V 1.1, 2004-10-20
100k
TDA 5221
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
23THRESAGC Threshold
Input
5uA
23
10k
243VOUT3V Reference
Output
24
20k
Ω
3.1V
25DATAData Output
25
500
40k
26PDOPeak Detector
Output
26
446k
Preliminary Specification13V 1.1, 2004-10-20
TDA 5221
Pin
SymbolEquivalent I/O SchematicFunction
Functional Description
No.
27PDWNPower Down
27
220k
220k
Input
28CRST2External Crystal
Connector 2
4.15V
28
50uA
Preliminary Specification14V 1.1, 2004-10-20
TDA 5221
2.3Functional Block Diagram
VCC
MI
68912 1718
LNI
3
TAGC
VCC
DGND
LNA
4
14
13
2,7 5,10
VCC AGND
RF
Figure 2Block Diagram
IF
Filter
MIXLNO
IFOSLN
LIMLIMX
LIMITER
TDA 5221
OTA
: 128
: 2VCO
Loop
Filter
Φ
DET
: 129
11
FSEL
2.4Functional Block Description
FSK
PLL Demod
: 2
MSEL
H=ASK
L=FSK
15
CRYSTAL
OSC
1
Crystal
-
+
+
FFB
FSK
ASK
2827
Functional Description
OPP
SLP
222119
20
16
SSEL
Logic
25
CM
DATA
+
CP
+
-
+
DATA-
SLICER
OP
-
PEAK
PDO
DETECTOR
26
THRES
23
U
REF
AGC
Reference
Bandgap
Reference
PDWN
3VOUT
24
2.4.1Low Noise Amplifier (LNA)
The LNA is an on-chip cascode amplifier with a voltage gain of 15 to 20dB. The gain
figure is determined by the external matching networks situated ahead of LNA and
between the LNA output LNO (Pin 6) and the Mixer Inputs MI and MIX (Pins 8 and 9).
The noise figure of the LNA is approximately 3dB, the current consumption is 500µA.
The gain can be reduce d by approxi mately 18 dB. The swit ching poi nt of this AGC ac tion
can be determined externally b y applyi ng a thresh old volta ge at the THRES pin (Pin 23).
This voltage is compared internally with the received signal (RSSI) level generated by
the limiter circuitry. In case that the RSSI level is higher than the threshold voltage the
LNA gain is reduced and vice versa. The threshold voltage can be generated by
attaching a voltage divider between the 3VOUT pin (Pin 24) which provides a
temperature stable 3V output generated from the internal bandgap voltage and the
THRES pin as described in Section 3.1. The time constant of the AGC action can be
determined by connecting a capacitor to the TAGC pin (Pin 4) and should be chosen
along with the appropriate threshold voltage according to the intended operating case
and interference scena rio to be expe cted du ring ope ration. The optim um ch oice of AGC
time constant and the threshold voltage is described in Section 3.1.
Preliminary Specification15V 1.1, 2004-10-20
TDA 5221
Functional Description
2.4.2Mixer
The Double Balanced Mixer down conve rts the i nput fre quenc y (RF) in th e range o f 31 0350MHz to the intermediate frequency (IF) at 10.7MHz with a vol-tage gain of
approximately 21dB by utilising either high- or low-side injection of the local oscillator
signal. In case the mixer is interfaced only single-ended, the unused mixer input has to
be tied to ground vi a a c ap aci tor. The mixer is followed by a low pass filter w it h a c orn er
frequency of 20MHz in order to su ppress RF s ignals to appe ar at the IF output (IFO pin).
The IF output is internal ly c on si sti ng o f an em itte r fol lower that has a source impedance
of approximately 330Ω to facilitate interfacing the pin directly to a standard 10.7MHz
ceramic filter without additional matching circuitry.
2.4.3PLL Synthesizer
The Phase Locked Loo p syn thesi zer co nsist s of a VCO, an asy nchro nous d ivide r chain,
a phase detector with charge pump and a loop filter and is fully implemented on-chip.
The VCO is including sp iral ind uctors and vara ctor di odes. T he tu ning ran ge of the VCO
was designed to guaran tee over produ ction spread and the specified tem peratu re range
a receive frequency range between 300 and 340 MHz depending on whether high- or
low-side injection of the local oscillator is used. The oscillator signal is fed both to the
synthesiser divider chain and to a divider that is dividing the signal by 2 before it is
applied to the downconverting mixer. Local oscillator high side injection has to be used
for receive frequencies between approximately 300 and 320 MHz, low side injection for
receive frequencies between 320 and 340MHz - see also Section 3.4. To be able to
switch between two different freq uency cha nnels a divi der ratio of either 32 or 32 .25 can
be selected via the FSEL-Pin.
Table 2Dependence of PLL overall division ratio on FSEL
FSELRatio r=(f
Open32
GND32.25
L0/fQU
)
2.4.4Crystal Oscillator
The calculation of the value of the necessary crystal load capacitance is shown in
Section 3.3, the crystal frequency calculation is explained in Section 3.4.
2.4.5Limiter
The Limiter is an AC coupled multistage amplifier with a cumulative gain of
approximately 80 dB that has a bandpass-characteristic centred around 10.7 MHz. It
has a typical input impedance of 330 Ω to allow for easy interfacing to a 10.7 MHz
ceramic IF filter. The limiter circuit also acts as a Receive Signal Strength Indicator
Preliminary Specification16V 1.1, 2004-10-20
TDA 5221
(RSSI) generator which produces a DC voltage that is directly proportional to the input
signal level as can be seen in Figure 4. This signal is used to demodulate ASKmodulated receive signals in the subsequent baseband circuitry. The RSSI output is
applied to the modulation format switch, to the Peak Detector input and to the AGC
circuitry.
In order to demodulate ASK signals the MSEL pin has to be in its ‘High‘-state as
described in the next chapter.
Functional Description
2.4.6FSK Demodulator
To demodulate frequency shift keyed (FSK) signals a PLL circuit is used that is
contained fully on chip. The Limiter output differential signal is fed to the linear phase
detector as is the output of the 10.7 MHz center frequency VCO. The demodulator gain
is typically 200µV/kHz. The passive loop fil ter output that is com prised fully on chip is fed
to both the VCO and the modulation format switch described in more detail below. This
signal is representing the demodulated signal with low frequencies applied to the
demodulator demodulated to logic ones and high frequencies demodulated to logic
zeroes. How ever th is is on ly vali d in cas e the loca l osci llator is low- side in ject ed to the
mixer which is applicable to receive frequencies above 320MHz. In case of receive
frequencies below 320MHz (e.g.315MHz) high frequencies are demodulated as logical
ones due to a sign inversion in the downconversion mixing process. See also Section
3.4.
The modulation forma t switch i s actually a switchabl e amplifier wi th an AC gain o f 11 that
is controlled by the MSEL pin (Pin 15) as shown in the following table. This gain was
chosen to facilitate d etec tio n in the sub se que nt c irc uit s. Th e DC gai n is 1 i n ord er no t to
saturate the subsequent Data Filter wih the DC offset produced by the demodulator in
case of large frequency offsets of the IF signal. The resulting frequency characteristic
and details on the principle of operation of the switch are described in Section 3.6.
Table 3MSEL Pin Operating States
MSELModulation Format
OpenASK
Shorted to groundFSK
The demodulator circuit is switched off in c a se of reception of ASK signals.
2.4.7Data Filter
The data filter comprises an OP-Amp with a bandwidth of 100kHz used as a voltage
follower and two 100kΩ on-chip resistors. Along with two external capac itors a 2nd order
Preliminary Specification17V 1.1, 2004-10-20
TDA 5221
Sallen-Key low pass filter is formed. The selection of the capacitor values is described
in Section 3.2.
Functional Description
2.4.8Data Slicer
The data slicer is a fast comparator with a bandwidth of 100 kHz. This allows for a
maximum receive data r ate of up to 10 0kBaud . The maxim um achiev able da ta rate als o
depends on the IF F ilt er b andwidth and the local oscillator to le ranc e val ue s. Both in puts
are accessible. The output delivers a digital data signal (CMOS-like levels) for
subsequent circuits. A self-adjusting slicer-threshold on pin 20 its generated by a RCterm. In ASK-mode alte rnatively a sc aled value of t he voltage at th e PDO-output (approx .
87%) can be used as the s licer-th reshol d as sh own in Tab le 4. The data slicer threshol d
generation alternatives are described in more detail in Section 3.5.
Table 4SSEL Pin Operating States
SSELMSELSelected Slicing Level (SL)
XLowexternal SL on Pin 20 (RC-term, e.g.)
HighHighexternal SL on Pin 20 (RC-term, e.g.)
LowHigh87% of PDO-output (approx.)
2.4.9Peak Detector
The peak detecto r gene rates a DC v oltage which is p roportio nal to the pe ak v alue o f the
receive data sign al. A capa citor is n ecessary . The inpu t is conn ected to th e out put of th e
RSSI-output of the Limiter, the output is connected to the PDO pin (Pin 26). This ou tput
can be used as an indicator for the received signal strength to use in wake-up circuits
and as a reference for the data slicer in ASK mode. Note that the RSSI leve l is also
output in case of FSK mode.
2.4.10Bandgap Reference Circuitry
A Bandgap Reference Circuit provides a temperature stable reference voltage for the
device. A power down mode is available to switch off all subcircuits which is controlled
by the PWDN pi n ( Pin 2 7) as sh own in the fo ll o win g t ab le. T h e s u pply current dra w n in
this case is typically 50nA.
Table 5PDWN Pin Operating States
PDWNOperating State
Open or tied to groundPowerdown Mode
Tied to VsReceiver On
Preliminary Specification18V 1.1, 2004-10-20
TDA 5221
3Applications
3.1Application Circuit
3VO UT
2423
20kΩ
RSSI > U
RSSI < U
threshold
threshold
: I
load
: I
load
=4.2µA
= -1.5µA
TAGC
+ 3 .1 V
C5
R4
THRES
I
load
4
U
U
C
U
U
U
C18
R5
U
threshold
OTA
G ain control
voltage
:< 2.6V : G ain high
c
:> 2 .6V : G a in low
c
= VCC - 0.7 V
cma x
= 1.67V
cmin
Applications
R S S I (0.8 - 2 .8V )
VCC
LNA
Figure 3LNA Automatic Gain Control Circuity
The LNA automatic gain control circuitry consists of an operational transimpedance
amplifier that is used to compare the received signal strength signal (RSSI) generated
by the Limiter with an externally provided threshold voltage U
. As shown in the
thres
following figure th e threshold volt age can have any value between approximately 0.8 and
2.8V to provide a switching point within the receive signal dynamic range.
This voltage U
is applied to the THRES pin (Pin 23 ) The thresh old voltage ca n be
thres
generated by attaching a voltage divider between the 3VOUT pin
(Pin 24) which provides a temperature stable 3V output generated from the internal
bandgap voltage and the THRES pin. If the RSSI level g enerated by the L imiter is h igher
than U
, the OTA generates a positi ve current I
thres
. This yields a voltage ris e on th e
load
TAGC pin (Pin 4). Otherwi se, the OTA generates a negative current. These currents do
not have the same values in order to achiev e a fast-attack an d slow-release ac tion of the
Preliminary Specification19V 1.1, 2004-10-20
TDA 5221
Applications
AGC and are used to charge an extern al capac itor wh ich fin ally ge nerates the LNA gain
control voltage.
in high gain mode
3
2.5
2
1.5
Voltage Range
THRES
U
1
0.5
0
-120-110-100-90-80-70-60-50-40
RSSI Level
Input Level at LNA Input [dBm]
LNA always
RSSI Level Range
in low gain mode
LNA always
-30
Figure 4RSSI Level and Permissive AGC Threshold Levels
The switching poi nt should be chosen accordin g to the in tended operating scenario . The
determination of the optimum point is described in the accompanying Application Note,
a threshold voltage level of 1.8V is apparently a via ble choice. It shoul d be noted that the
output of th e 3VOUT pin is capable of driving up to 50µA, but that the THRES pin input
current is only in the reg ion of 40nA. As the curren t drawn out of the 3VOUT pin is directly
related to the receiver power con sumptio n, the pow er divider resi stor s shoul d have hig h
impedance values. The sum of R1 and R2 has to be 600kΩ in order to yield 3V at the
3VOUT pin. R1 can thus be chosen as 240kΩ, R2 as 360kΩ to yield an overall 3VOUT
output current of 5µA
1)
and a threshold voltage of 1.8V
Note: If the LNA gain shall be kept in either high or low gain mode this has to be
accomplished by tying the THRES pin to a fixed voltage. In order to achieve high gain
mode operation, a voltage higher than 2.8V shall be applied to the THRES pin, such as
a short to the 3VOLT pin. In order to achieve low gain mode operati on THRES has t o be
connected to GND.
As stated above the capacitor connected to the TAGC pin is gen erating the gain control
voltage of the LNA due to the charging and discharging currents of the OTA and thus is
also responsible for the AGC time constant. As the charging and discharging currents
are not equal two differen t time constan ts will res ult. The time cons tant corr espondin g to
the charging process of the capacitor shall be chosen according to the data rate.
According to measuremen ts performed at Infine on the capacitor valu e should be greater
than 47nF.
1) note the 20kΩ resistor in series with the 3.1V internal voltage source
Preliminary Specification20V 1.1, 2004-10-20
TDA 5221
Applications
3.2Data Filter Design
Utilising the on-board voltage follower and the two 100kΩ on-chip resistors a 2nd order
Sallen-Key low pass data filter can be constructed by adding 2 external capacitors
between pins 19 (SLP) and 22 (FFB) and to pin 21 (OPP) as depicted in the following
figure and described in the following formulas
C14C12
222119
R
F1 int
100k100k
R
F2 int
Figure 5Data Filter Design
with R
F1int=RF2int
=R
2
=
C
14
fR
2
π
1)
.
SLPOPPFFB
bQ
C
12
dB
3
b
=
fQR
4
π
dB
3
with
b
Q =
a
Q is the qualify factor of the poles where, in case of a Bessel filter a=1.3617, b=0.618
and thus Q=0.577
and in case of a Butter worth filter a=1.414, b=1
and thus Q=0.71
Example: Butter worth filter with f
=5kHz and R=100kΩ:
3dB
C14=450pF, C12=225pF
1) taken from Tietze/Schenk: Halbleiterschaltungstechnik, Springer Berlin, 1999
Preliminary Specification21V 1.1, 2004-10-20
TDA 5221
Applications
3.3Crystal Load Capacitance Calculation
The value of the capacit or neces sary to ac hieve that the cry stal os cilla tor is opera ting at
the intended frequency is determined by the reactive part of the negative resistance of
the oscillator circu it as shown in Section 4.1.3 and by the crystal specificati ons giv en by
the crystal manufacturer.
C
S
CRST2
Xf
L
28
TDA521X
1
CRST1
can be
L
Crystal
Input
impedance
Z
1-28
Figure 6Determination of Series Capacitance Vale for the Quartz Oscillator
The required series capacitor for a crystal with specified load capacitance C
calculated as
C
S
1
=
1
π
2
+
C
L
CL is the nominal load capacitance specified by the crystal manufacturer.
Example:
10.18 MHz: C
= 12 pFXL=870 Ω CS = 7.2 pF
L
This value may be obtained by putting two capacitors in series to the crystal, such as
18pF and 12pF in the 10.2MHz case.
But please note that the calculated C
-value includes all parasitic.
S
3.4Crystal Frequency Calculation
As described in Section 2.4.3 the operating range of the on-chi p VCO is wi de enoug h to
guarantee a receive frequency range between 300 and 340MHz. The VCO signal is
divided by 2 before applied to the mixer . This local oscillator signal can be used to
downconvert the RF signals both with high- or low-side injection at the mixer. High-side
Preliminary Specification22V 1.1, 2004-10-20
TDA 5221
r
Applications
injection of the local oscillator has to be used for receive frequencies between 300 and
320 MHz. In this case the local oscillator frequency is calculated by adding the IF
frequency (10.7 MHz) to the RF frequency. In this case the higher frequency of a FSKmodulated signal is demodulated as a logical one (high).
Low-side injection has to be used for receive frequencies between 320 and 340 MHz.
The local oscillator frequency is calculated by subtracting the IF frequency (10.7 MHz)
from the RF frequency then. Please note that in this case sign-inversion occurs and the
higher frequency of a FSK-mod ulated signa l is de modul ated as a logi cal ze ro (low). Th e
overall division ratios i n th e PLL are 32 or 3 2.2 5 d epe ndi ng on whether the FSEL-pin is
left open or tied to ground.
Therefore the crystal frequency may be calculated by using the following formula:
withƒ
f
=
QU
receive frequency
RF
local oscillator (PLL) frequency (ƒ
ƒ
LO
f
RF
7.10±
RF
± 10.7)
ƒQU quartz crystal oscillator frequency
r ratio of local oscillator (PLL) frequency and crystal frequency as
shown in the subsequent table
Table 6Dependence of PLL Overall Division Ratio on FSEL
FSELRatio r=(fLO/fQU)
open32
GND32.25
This yields the following exa mples :
FSEL is „Low“:
MHzMHz
7.1055.318
f
=
QU
+
25.32
=
MHz
209375.10
FSEL is „High“:
MHzMHz
7.10316
f
=
QU
+
32
=
MHz
209375.10
3.5Data Slicer Threshold Generation
The threshold of the data slicer can be generated using an external R-C integrator as
shown in Figure 7.
Preliminary Specification23V 1.1, 2004-10-20
TDA 5221
The time constant TA of this circuit including also the internal resistors R
Applications
and R
F3int
F4int
(see Figure 9) has to be significantly larger than the longest period of no signal change
within the data sequence.
T
L
In order to keep distortion low, the minimum value for R is 20kΩ.
has to be calculated as
T
A
=
+⋅
T
A
1
)(1
RRR
FF
int4int3
++
RRR
FF
int4int3
⋅+=⋅
FF
int4int3
...13)(113
ASKforCRRIIRC
and
CM
RRIIR
+
v
25
)(1
FF
int4int3
⋅
FSKforC
...13
T
A
R1, R
=
F3 int
int4
1
, R
++
and C13 see also Figure 7 and .Figure 9
F4 int
data
filter
C
RRR
FF
13
int4int3
=⋅
2019
U
threshold
data slicer
RR
1
⋅
F
Figure 7Data Slicer Threshold Generation with External R-C Integrator
In case of ASK operation another possibility for threshold generation is to use the peak
detector in connection with an internal resistive divider and one capacitor as shown in
the following Figure 8. For selecting the peak detector as reference for the slicing level
a logic low as to be applied on the SSEL pin.
In case of MSEL is high (or open), which means that ASK-Mode is selected, a logic low
on the SSEL pin yields a logic high on the AND-output and thus the peak-detector is
selected (see Figure 9).
In case of FSK the MSEL-pin and furthermore the one input of the AND-gate is low, so
the peak detector can not be selected.
The capacitor value is depending on the coding scheme and the protocol used.
Preliminary Specification24V 1.1, 2004-10-20
TDA 5221
C
Pins:
peak detector
26
56k
U
390k
data slicer
threshold
25
CP
Applications
Figure 8Data Slicer Threshold Generation Utilising the Peak Detector
3.6ASK/FSK-Data Path Functional Description
The TDA5221 is containing an ASK/FSK switch which can be controlled via Pin 15
(MSEL). This switch is actually consisting of 2 operational amplifiers that are having a
gain of 1 in case of the ASK amplifier and a gain of 11 in case of the FSK amplifier in
order to achieve an appropriate demodulation gain characteristic. In order to
compensate for the DC-offse t generated es pecially in case of the FSK PLL demodu lator
there is a feedback connec tion between the thresho ld voltage of the bit slic er comparator
(Pin 20) to the negative input of the FSK switch amplifier.
In ASK-mode alternatively to the voltage at Pin 20 (SLN) a value of approx. 87% of the
peak-detector output-vo lta ge at Pin 26 (PDO) can be used as the s li cer -reference level.
The slicing reference level is generated by an internal voltage divider (R
T1int
, R
T2int
which is applied on the peak detector output.
The selection between these modes is controlled by Pin 16 (SSEL), as described in
Section 3.5.
This is shown in the following Figure 9.
Preliminary Specification25V 1.1, 2004-10-20
),
TDA 5221
F
R
56k
T1 int
R
390k
T2
H=CP
L=CM
SSEL
Applications
PDO
26
25
C15
100n
DATA Out
from RSSI Gen
(ASK signal)
FSK PLL Demodulator
0.18 mV/kHz
typ. 2 V
1.5 V ......2.5 V
MSEL
15
H=ASK
L=FSK
ASK/FSK Switch
Data F ilter
-
+
ASK
FSK
+
-
ACDC
R
300k
R
F4 int
30k
ASK mode: v=1
FSK mode: v=11
F3 int
R
F1 int
100k100k
R
F2 int
v = 1
19212220
SLPOOPFFBSLN
C12
C14
PEAK
DETECTOR
Comp
-
+
CP
CM
+
-
1
16
R1
C13
Figure 9ASK/FSK mode datapath
3.7FSK Mode
The FSK datapath has a bandpass characterisi tc due to the feedback shown above
(highpass) and the data filter (lowpass). The lower cutoff frequency f2 is determined by
the external RC-combination. The upper cutoff frequency f3 is determined by the data
filter bandwidth.
The demodulation gain of the FSK PLL demodulator is 200µV/kHz. This gain is
increased by the g ai n v o f th e FSK switch, which is 11. Therefore the resulting dynamic
gain of this circ uit is 2 .2mV/kHz within the bandpas s. The g ain for th e DC conte nt of FSK
signal remains at 200µV/kHz. The cu t-off frequencies of the bandpas s have to be chosen
such that the spectrum of the data signal is influenced in an acceptable amount.
In case that the use r data is co ntaini ng long se quences of l ogica l zeroes th e effect of th e
drift-off of the bit slicer threshold voltage can be lowered if the offset voltage inherent at
the negative input of the slicer comparator (Pin20) is used. The comparator has no
hysteresis built in.
This offset voltage is generated by the bias current of the negative input of the
comparator (i.e. 20nA) running over the external resistor R. This voltage raises the
voltage appearing a t p in 20 (e.g . 1 mV with R = 100kΩ). In order to obtain benefit of this
Preliminary Specification26V 1.1, 2004-10-20
TDA 5221
Applications
asymmetrical offset for the demodulation of long zeros the lower of the two FSK
frequencies should be chosen in the transmitter as the zero-symbol frequency.
In the following figure the shape of the above mentioned bandpass is shown.
gain (pin19)
v
v-3dB
20dB/dec-40dB/dec
3dB
0dB
DC
f1f2f3
0.18mV/kHz
2mV/kHz
f
Figure 10Frequency characteristic in case of FSK mode
The cutoff frequencies are calculated with the following formulas:
f
=
1
2
π
is the 3dB cutoff frequency of the data filter - see Section 3.2.
f
3
1
3301
kR
Ω×
13
C
×
3301
kR
Ω+
11 ffvf×=×=
112
ff33=
dB
Example:
R1 = 100kΩ, C13 = 47nF
This leads tof
Preliminary Specification27V 1.1, 2004-10-20
= 44Hz and f2 = 485Hz
1
TDA 5221
Applications
3.8ASK Mode
In case the receiver is operated in ASK mode the datapath frequency charactersitic is
dominated by the data filter alone, thus it is lowpass shaped.The cutoff frequency is
determined by the external capacitors C
and C14 and the internal 100k resistors as
12
described in Section 3.2
0dB
-3dB
-40dB/dec
f3dB
f
Figure 11Frequency characteristic in case of ASK mode
3.9Principle of the Precharge Circuit
In case the data slicer threshold shall be generated with an external RC network as
described in Section 3.5 it is necessary to use large values for the capacitor C attached
to the SLN pin (pin 2 0) in orde r to achie ve long tim e constants . This re sults al so from th e
fact that the choice of the value for R1 connected between the SLP and SLN pins (pins
19 and 20) is lim ite d by the 330kΩ resistor appearing in paral le l t o R 1 as c an b e s ee n i n
Figure 9. Apart from this a resis tor va lue of 10 0kΩ lead s to a vol tage o ffset of 1mv at th e
comparator input. The resulting startup time constant τ
()
τ
1
can be calculated with:
1
13330||1
CkR×Ω=
In case R1 is chosen to be 100kΩ and C13 is chosen as 47nF this leads to
()
τ
1
msnFknFkk6.3477747330||100
=×Ω=×ΩΩ=
When the device is turned on this time constant dominates the time necessary for the
device to be able to demodulate data properly. In the powerdown mode the capacitor is
only discharged by leakage currents.
Preliminary Specification28V 1.1, 2004-10-20
TDA 5221
Applications
In order to reduce the turn-on time in the presence of large values of C a precharge
circuit was included in the TDA5221 as shown in the following figure.
C18
20k
24
R4+R5=600k
R4
U2
+3.1V
U
23
Uc>Us
R5
threshold
OTA
-
Uc<Us
0 / 240uA
+
20
I
load
-
+
U2<2.4V : I=240uA
U2>2.4V : I=0
+2.4V
C13
R1
19
Uc
Data Filter
Us
ASK/FSK Switch
Figure 12Principle of the precharge circuit
This circuit charg es the c apaci tor C13 w ith an inrus h curren t I
duration of T
until the vol tag e Uc appearing on the capacitor is equal to the voltage U
2
of typically 220µA for a
load
at the input of the data filter. This voltage is limited to 2.5V. As soon as these voltages
are equal or the duration T
is exceeded the precharge circuit is disabled.
2
τ2 is the time constant of the charging process of C18 which can be calculated as
s
220
τ
2
as the sum of R4 and R5 is sufficiently large and thus can be neglected. T
Ck ×Ω≈
can then be
2
calculated according to the following formula:
T
Preliminary Specification29V 1.1, 2004-10-20
ln
=
1
−
1
4.2
V
3
V
6.1
×≈
ττ
222
TDA 5221
The voltage transient during the charging of C2 is shown in the following figure:
Applications
U2
3V
2.4V
2
Figure 13Voltage appearing on C18 during precharging process
The voltage appe aring on the c apacitor C13 co nnected to pin 20 is shown in the followin g
figure. It can be seen that due to the fact that it is charged by a constant current source
it exhibits is a lin ear inc rease in v olt age whi ch is lim ited to U
approximate operating point of the data filter input. The time constant appearing in this
case can be denoted as T3, which can be calculated with:
T2
= 2.5V which is also the
Smax
13
CU
×
max
S
T
=
3
220
A
Preliminary Specification30V 1.1, 2004-10-20
220
5.2
V
13
C
×=
A
µµ
TDA 5221
Uc
Us
T3
Figure 14Voltage transient on capacitor C13 attached to pin 20
As an example the choice of C18 = 22nF and C13 = 47nF yields
= 0.44ms
τ
2
T2 = 0.71ms
T3 = 0.53ms
Applications
This means that in this case the inrush current could flow for a duration of 0.64ms but
stops already after 0.49m s when the U
chosen to be shorter than T
.
2
limit has been reac hed. T3 should always be
Smax
It has to be noted finally that during the turn-on duration T2 the overall device power
consumption is increased by the 220µA needed to charge C13.
The precharge circuit may be disabled if C18 is not equipped. This yields a T
zero. Note th at the sum of R
and R5 has to be 600kΩ in order to produce 3V at the
4
close to
2
THRES pin as this voltage is internally used also as the reference for the FSK
demodulator.
Preliminary Specification31V 1.1, 2004-10-20
TDA 5221
Reference
4Reference
4.1Electrical Data
4.1.1Absolute Maximum Ratings
Attention: The maximum ratings may not be exceeded under any circumstances,
not even momentarily a nd in divi dual ly, a s p erma nent dam age to th e IC
may result. The AC/DC characteristic limits are not guaranteed.
Within the operational range the IC operates as explained in the circuit description.
Currents flowing into the device are denoted as positive currents and vice versa. The
device parameters marked with ■ are not part of the production test, but either verified
by design or measured in the Infineon Evalboard as described in Section 4.2.
Supply voltage: VCC = 4.5V .. 5.5V
T
Table 8Operating Range,
#
ParameterSymbol Limit Values UnitTest Conditions/
1 Supply CurrentI
2 Receiver Input Level
ASK
FSK, frequ. dev. ± 50kHz
3 LNI Input Frequencyf
Preliminary Specification32V 1.1, 2004-10-20
SF
I
SA
RF
RF
= -40 °C … +105 °C
amb
min.max.
4.1
3.5
in
-110
-102
300340MHz
8.1
7.3mAmA
-13
dBm
-13
dBm
L
Notes
■
TDA 5221
#
ParameterSymbol Limit Values UnitTest Conditions/
min.max.
4 MI/X Input Frequencyf
5 3dB IF Frequency Range
ASK
FSK
6 Powerdown Mode OnPWDN
7 Powerdown Mode OffPWDN
8 Gain Control Voltage,
LNA high gain state
9 Gain Control Voltage,
LNA low gain state
■ Not part of the production test - either verified by design or measured in an Infineon Ev alboard
described in
Section 4.2.
MI
f
IF -3dB
V
THRES
V
THRES
4.1.3AC/DC Characteristics at T
300340MHz
5
10.42311
2VSV
ON
00.8V
OFF
2.8V
00.7V
AMB
S
= 25°C
MHz
V
Notes
Reference
L
■
AC/DC characteristics involve the spread of values guaranteed within the specified
voltage and ambient temperature range. Typical characteristics are the median of the
production. Currents flowing into the device are denoted as po-sitive currents and vice
versa. The device performan ce parameters marked with
■ are not part of the pro ductio n
test, but either verif ied by design or measured in the Infineon Evalboard as desc rib ed i n
Section 4.2.
Table 9AC/DC Characteristics with TA 25°C, V
#
ParameterSymbolLimit ValuesUnitTest Conditions/
min.typ.max.
=4.5 ... 5.5 V
VCC
L
Notes
SUPPLY
Supply Current
1 Supply current,
standby mode
2 Supply current,
device operating in
FSK mode
3 Supply current,
device operating in
ASK mode
Preliminary Specification33V 1.1, 2004-10-20
I
S PDWN
I
SF
I
SA
50100nAPin 27 (PDWN)
open or tied to 0 V
5.16.27.1mAPin 11 (FSEL) open,
Pin 15 (MSEL) tied
to GND
4.55.56.3mAPin 11 (FSEL) open,
Pin 15 (MSEL) open
TDA 5221
#
ParameterSymbolLimit ValuesUnit Test Conditions/
min.typ.max.
Notes
LNA
Signal Input LNI (PIN 3), V
1 Average Power Level
at BER = 2E-3
(Sensitivity)
2 Average Power Level
at BER = 2E-3
(Sensitivity) FSK
3 Input impedance,
= 315 MHz
f
RF
4 Input level @ 1dB
C.P.
=315 MHz
f
RF
rd
5 Input 3
order
intercept point f
315 MHz
RF
=
6 LO signal feedthrough
at antenna port
Signal Output LNO (PIN 6), V
1 Gain f
= 315 MHzS
RF
2 Output impedance,
= 315 MHz
f
RF
3 Voltage Gain Antenna
to MI f
= 315 MHz
RF
4 Noise Figure NF
Signal Input LNI, V
THRES
1 Input impedance,
= 315 MHz
f
RF
2 Input level @ 1dB C.
= 315 MHz
P. f
RF
>2.8V, high ga i n mode
THRES
RF
in
RF
in
S
11 LNA
P1dB
IIP3
LO
LNI
THRES
21 LNA
S
22 LNA
G
0.895 / -25.5 deg■
LNA
LNA
>2.8V, high gain mode
1.577 / 150.3 deg■
0.897 / -10.3 deg■
AntMI
LNA
=GND, lwo gain mode
S
11 LNA
P1dB
0.918 / -25.2 deg■
LNA
-113dBmManchester
encoded datarate
4kBit, 280kHz IF
Bandwidth
1 Powerdown Mode On PWDN
2 Powerdown Mode Off PWDN
3 Input bias current
PDWN
Preliminary Specification37V 1.1, 2004-10-20
I
PDWN
2.8V
ON
00.8V
Off
19µAPower On Mode
V
S
TDA 5221
#
ParameterSymbolLimit ValuesUnit Test Conditions/
Notes
used crystal
4 Start-up Time until
valid IF signal is
detected
min.typ.max.
T
SU
1msdepends on the
PLL DIVIDER
Signal FSEL (PIN 11)
1 Overal divison ratio 32V
2 Overal division ratio
32.25
3 Input bias current
FSEL
FSEL
V
FSEL
I
FSEL
1.44Vor open
00 .2Vor tied to GND
-11-19µAFSEL tied to GND
DATA-SLICER REFERENCE-LEVEL
Signal SSEL (PIN 16), ASK-Mode
1 Slicer-Reference is
voltage at Pin 20
(SLN)
2 Slicer-Reference is
approx. 87% of the
voltage at Pin 26
(PDO)
3 Input bias current
SSEL
V
SSEL
V
SSEL
I
SSEL
1.44Vor open
00.2V
-11-19µ ASSEL tied to GND
Reference
L
■
Not part of the production test - either verified by design or measured in the Infineon
■
Evalboard as described in Section 4.2.
Preliminary Specification38V 1.1, 2004-10-20
TDA 5221
4.1.4AC/DC Characteristics at T
= -40 to 105°C
AMB
Reference
Currents flowing into the device are denoted as positive currents and vice versa.
Table 10AC/DC Characteristics with T
#
ParameterS ym bolLimit ValuesUnit Test Conditions/
min.typ.max.
= -40°C ...+105°C, V
AMB
Notes
=4.5 ... 5.5 V
VCC
SUPPLY
Supply Current
1 Supply current,
standby mode
2 Supply current,
device operating in
FSK mode
3 Supply current,
device operating in
ASK mode
Signal Input 3VOUT (PIN 24)
1 Output voltageV
2 Current outI
Signal THRES (PIN 23)
1 Input Voltage rangeV
2 LNA low gain modeV
3 LNA high gain mode V
4 Current inI
Signal TAGC (PIN 4)
1 Current out,
LNA low gain state
2 Current in, LNA high
gain state
I
S PDWN
I
SF
I
SA
3VOUT
3VOUT
THRES
THRES
THRES
THRES_in
I
TAGC_out
V
TAGC_in
50400nAPin 27 (PDWN) open
or tied to 0 V
4.16.28.1mAPin 11 (FSEL) open,
Pin 15 (MSEL) tied to
GND
3.55.57.3mAPin 11 (FSEL) open,
Pin 15 (MSEL) open
2.93.13.3V3VOUT Pin open
-3-5-10µAsee Section 4.1
0V
-1Vsee Section 4.1
S
0V
3V
-1Vor shorted to Pin 24
S
5nA
-1-4.2-8µARSSI > V
0.51 .55µARSS I < V
THRES
THRES
L
■
MIXER
1 Conversion Voltage
Gain f
= 315 MHz
RF
G
MIX
+19dB
LIMITER
Preliminary Specification39V 1.1, 2004-10-20
TDA 5221
#
ParameterS ym bolLimit ValuesUnit Test Conditions/
min.typ.max.
Notes
Signal Input LIM/X (PINS 17/18)
1 RSSI dynamic range DR
2 RSSI Level at Data
RSSI
Filter Output SLP,
RF
= -103dBm
IN
3 RSSI Level at Data
RSSI
Filter Output SLP,
= -30dBm
RF
IN
RSSI
low
high
70dB
1.1VLNA in high gain mode
2.65VLNA in high gain mode
DATA FILTER
Slicer, Signal Output DATA (PIN 25)
1 Maximum DatarateDR
2 LOW output voltageV
3 HIGH output voltage V
SLIC_L
SLIC_HVS
Slicer, Negative Input (PIN 20)
1 Precharge Current
Out
I
PCH_SLN
max
00.1V
-
1.5
-100-220-300µAsee Section 3.9
100kBps NRZ, 20pF capacitive
loading
VS-1VS-
Voutput current=200µ A
0.5
Reference
L
■
PEAK DETECTOR
Signal Output PDO (PIN 26)
1 Load currentI
load
-400µAstatic load current must
not exceed -500µA
2 Internal resistive load R356446575kΩ
CRYSTAL OSCILLATOR
Signals CRSTL 1, CRSTL 2 (PINS 1/28)
1 Operating frequencyf
CRSTL
511MHz fundamental mode,
series resonance
ASK/FSK Signal Switch
Signal MSEL (PIN 15)
1 ASK ModeV
MSEL
Preliminary Specification40V 1.1, 2004-10-20
1.44Vor open
TDA 5221
#
ParameterS ym bolLimit ValuesUnit Test Conditions/
Notes
2 FSK ModeV
3 Input bias current
MSEL
MSEL
I
MSEL
min.typ.max.
00.2V
-11-20µA MS EL tied to GND
FSK DEMODULATOR
1 Demodulation GainG
2 Useable IF
Bandwidth
FMDEM
BW
IFPLL
200µV/k
Hz
10.410.711M Hz
POWER DOWN MODE
Signal PDWN (PIN 27)
1 Powerdown Mode On PWDN
2 Powerdown Mode Off PWDN
3 Start-up Time until
valid signal is
T
SU
2.8V
ON
00.8V
Off
V
S
1msdepends on the used
crystal
detected at IF
PLL DIVIDER
Reference
L
■
Signal FSEL (PIN 11)
1 Overal divison ratio 32V
2 Overal division ratio
32.25
3 Input bias current
FSEL
FSEL
V
FSEL
I
FSEL
1.44Vor open
00.2Vor tied to GND
-11-20µAFSEL tied to GND
DATA-SLICER REFERENCE-LEVEL
Signal SSEL (PIN 16), ASK-Mode
1 Slicer-Reference is
voltage at Pin 20
(SLN)
Preliminary Specification41V 1.1, 2004-10-20
V
SSEL
1.44Vor open
TDA 5221
#
ParameterS ym bolLimit ValuesUnit Test Conditions/
min.typ.max.
2 Slicer-Reference is
approx. 87% of the
voltage at Pin 26
(PDO)
3 Input bias current
SSEL
Not part of the production test - either verified by design or measured in the Infineon
■
V
SSEL
I
SSEL
00.2V
-11-20µASSEL tied to GND
Notes
Reference
Evalboard as described in Section 4.2.
4.2Test Circuit
The device performance parameters marked with ■ in Section 4.1 wer e ei th er ve rif ied
by design or measured on an Infineon evaluation board. This evaluation board can be
obtained together with evaluation boards of the accompanying transmitter device
TDK5110 in an evaluation kit that may be ordered on the INFINEON Webpage
www.infineon.com/Products More information on the kit is available on request.
L
Figure 15Schematic of the Evaluation Board
Preliminary Specification42V 1.1, 2004-10-20
TDA 5221
4.3Test Board Layouts
Figure 16Top Side of the Evaluation Board
Reference
Figure 17Bottom Side of the Evaluation Board
Preliminary Specification43V 1.1, 2004-10-20
TDA 5221
Figure 18Component Placement on the Evaluation Board
4.4Bill of Materials
The following components are necessary for evaluation of the TDA5221.