INFINEON SPW47N60CFD User Manual
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SPW47N60CFD
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
Product Summary
V
DS
R
DS(on),max
I
D
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
1)
• Qualified according to JEDEC
for target applications
• Pb-free lead plating; RoHS compliant
Type Package Ordering Code Marking
SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD
PG-TO247
600 V
0.083
46 A
Ω
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
Drain source voltage slope dv /dt
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
1)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=10 A, VDD=50 V
ID=20 A, VDD=50 V
I
T
I
T
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=46 A, VDS=480 V,
D
=125 °C
j
=46 A, VDS=480 V,
S
=125 °C
j
Value
46
A
29
115
1800 mJ
1
20
80
A
V/ns
40
600
±20
±30
417
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Rev. 1.2 page 1 2005-06-28
SPW47N60CFD
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature, wave solderin
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
T
sold
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.3 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
(BR)DSVGS
V
GS(th)
=0 V, ID=250 µA
=0 V, ID=46 A
VDS=VGS, ID=2.9 mA
600 - - V
- 700 -
345
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
I
R
R
g
DSS
GSS
DS(on)
G
fs
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=29 A,
T
=25 °C
j
=10 V, ID=29 A,
V
GS
T
=150 °C
j
-6-µA
- 5000 -
- - 100 nA
- 0.07 0.083
- 0.15 -
f =1 MHz, open drain - 0.62 -
|VDS|>2|ID|R
I
=29 A
D
DS(on)max
,
-30-S
Ω
Rev. 1.2 page 2 2005-06-28
SPW47N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
4)
related
Effective output capacitance, time
5)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
=0 V, VDS=25 V,
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=46 A,
GS
=3.3 Ω
R
G
- 7700 - pF
- 2200 -
-77-
- 245 -
- 453 -
-30-ns
-30-
- 100 -
-15-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
Q
Q
Q
V
gs
gd
g
plateau
V
=480 V, ID=46 A,
DD
V
=0 to 10 V
GS
-54-nC
- 130 -
- 248 322
- 7.1 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
DSS.
DSS.
Rev. 1.2 page 3 2005-06-28
SPW47N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I
S
I
S,pulse
V
SD
t
rr
Q
I
rrm
=25 °C
T
C
VGS=0 V, IF=46 A,
T
=25 °C
j
=480 V, IF=IS,
V
rr
R
di
/dt =100 A/µs
F
- - 46 A
- - 115
- 1.0 1.2 V
- 210 - ns
-2-µC
-18-A
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
R
th1
0.00289 K/W C
th1
0.000564 Ws/K
R
R
R
R
5)
R
th2
th3
th4
th5
C
thCA
th6
=0 K/W.
0.00399 C
0.0224 C
0.0421 C
0.0619 C
th2
th3
th4
th5
C
th6 4.4
0.0034
0.0048
0.0273
0.149
5)
models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
Rev. 1.2 page 4 2005-06-28
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