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SPW47N60CFD
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Intrinsic fast-recovery body diode
Product Summary
V
DS
R
DS(on),max
I
D
• Extremely low reverse recovery charge
• Ultra low gate charge
• Extreme dv /dt rated
• High peak current capability
• Periodic avalanche rated
1)
• Qualified according to JEDEC
for target applications
• Pb-free lead plating; RoHS compliant
Type Package Ordering Code Marking
SPW47N60CFD PG-TO247 Q67045A5051 47N60CFD
PG-TO247
600 V
0.083
46 A
Ω
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
Drain source voltage slope dv /dt
Reverse diode dv /dt dv /dt V/ns
Maximum diode commutation speed di /dt A/µs
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
1)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=10 A, VDD=50 V
ID=20 A, VDD=50 V
I
T
I
T
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=46 A, VDS=480 V,
D
=125 °C
j
=46 A, VDS=480 V,
S
=125 °C
j
Value
46
A
29
115
1800 mJ
1
20
80
A
V/ns
40
600
±20
±30
417
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Rev. 1.2 page 1 2005-06-28
SPW47N60CFD
g
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature, wave solderin
Electrical characteristics, at T
=25 °C, unless otherwise specified
j
R
thJC
R
thJA
T
sold
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.3 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
Gate threshold voltage
V
(BR)DSSVGS
V
(BR)DSVGS
V
GS(th)
=0 V, ID=250 µA
=0 V, ID=46 A
VDS=VGS, ID=2.9 mA
600 - - V
- 700 -
345
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
I
I
R
R
g
DSS
GSS
DS(on)
G
fs
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=29 A,
T
=25 °C
j
=10 V, ID=29 A,
V
GS
T
=150 °C
j
-6-µA
- 5000 -
- - 100 nA
- 0.07 0.083
- 0.15 -
f =1 MHz, open drain - 0.62 -
|VDS|>2|ID|R
I
=29 A
D
DS(on)max
,
-30-S
Ω
Rev. 1.2 page 2 2005-06-28
SPW47N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
4)
related
Effective output capacitance, time
5)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
V
=0 V, VDS=25 V,
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=46 A,
GS
=3.3 Ω
R
G
- 7700 - pF
- 2200 -
-77-
- 245 -
- 453 -
-30-ns
-30-
- 100 -
-15-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
Q
Q
Q
V
gs
gd
g
plateau
V
=480 V, ID=46 A,
DD
V
=0 to 10 V
GS
-54-nC
- 130 -
- 248 322
- 7.1 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
DSS.
DSS.
Rev. 1.2 page 3 2005-06-28
SPW47N60CFD
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
I
S
I
S,pulse
V
SD
t
rr
Q
I
rrm
=25 °C
T
C
VGS=0 V, IF=46 A,
T
=25 °C
j
=480 V, IF=IS,
V
rr
R
di
/dt =100 A/µs
F
- - 46 A
- - 115
- 1.0 1.2 V
- 210 - ns
-2-µC
-18-A
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
R
th1
0.00289 K/W C
th1
0.000564 Ws/K
R
R
R
R
5)
R
th2
th3
th4
th5
C
thCA
th6
=0 K/W.
0.00399 C
0.0224 C
0.0421 C
0.0619 C
th2
th3
th4
th5
C
th6 4.4
0.0034
0.0048
0.0273
0.149
5)
models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
Rev. 1.2 page 4 2005-06-28
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
parameter: t
500
10
p
3
SPW47N60CFD
10
2
limited by on-state
resistance
400
300
[W]
tot
P
[A]
D
I
10
1
200
0
10
100
-1
0
0 40 80 120 160
TC [°C]
10
10
0
10
1
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
I
=f(VDS); Tj=25 °C ID=f(VDS); Tj=25 °C
D
parameter: D=t
0
10
/T parameter: V
p
120
105
GS
20 V
1 µs
10 µs
100 µs
1 ms
DC
10 V
8 V
10
10 ms
2
10
3
10
[K/W]
thJC
Z
10
10
0.5
-1
0.2
0.1
0.05
-2
0.02
0.01
single pulse
-3
0
-1
-2
-3
-4
-5
10
-6
10
10
10
10
10
10
tp [s]
90
75
60
[A]
D
I
7 V
45
30
15
0
6.5 V
6 V
5.5 V
5 V
0 5 10 15 20
VDS [V]
Rev. 1.2 page 5 2005-06-28
SPW47N60CFD
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); Tj=150 °C R
D
parameter: V
GS
=f(ID); Tj=150 °C
DS(on)
parameter: V
GS
100
90
80
70
60
50
[A]
D
I
40
30
20
10
0
0 5 10 15 20
VDS [V]
20 V
10 V
8 V
7 V
6.5 V
6 V
5.5 V
5 V
0.3
0.25
0.2
]
Ω
[
R
DS(on)
5 V
0.15
6 V
5.5 V
0.1
0.05
0
0 1020304050
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID=30 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R
DS(on)
parameter: T
j
DS(on)max
20 V
6.5 V
7 V
0.2
200
160
]
Ω
[
R
0.15
DS(on)
0.1
98 %
120
[A]
D
I
typ
80
25 °C
150 °C
0.05
40
0
-60 -20 20 60 100 140 180
Tj [°C]
0
0246810
VGS [V]
Rev. 1.2 page 6 2005-06-28
SPW47N60CFD
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID=47 A pulsed IF=f(VSD)
gate
DD
12
parameter: T
3
10
j
10
120 V
480 V
10
2
8
150 °C
[V]
GS
V
6
[A]
F
I
10
1
4
0
10
2
-1
0
0 50 100 150 200 250 300
Q
[nC]
gate
10
0 0.5 1 1.5 2
11 Avalanche SOA 12 Avalanche energy
I
=f(tAR) EAS=f(Tj); ID=10 A; VDD=50 V
AR
parameter: T
25
j(start)
2000
25 °C
VSD [V]
25 °C, 98%
150 °C, 98%
[A]
AV
I
20
15
10
125 °C
25 °C
5
0
10
-3
10
10
10
10
10
10
2
1
0
-1
-2
tAR [µs]
1600
1200
[mJ]
AS
E
800
400
3
0
20 60 100 140 180
Tj [°C]
Rev. 1.2 page 7 2005-06-28
13 Drain-source breakdown voltage 14 Typ. capacitances
SPW47N60CFD
V
BR(DSS)
=f(Tj); ID=15 mA C =f(VDS); VGS=0 V; f =1 MHz
700
660
[V]
620
BR(DSS)
V
580
540
-60 -20 20 60 100 140 180
Tj [°C]
5
10
4
10
3
10
C [pF]
2
10
1
10
0 100 200 300 400 500
Ciss
Coss
Crss
VDS [V]
15 Typ. C
E
= f(VDS)Q
oss
[µJ]
oss
E
stored energy 16 Typ. reverse recovery charge
oss
=f(Tj); IS=47 A; di /dt =100 A/µs
rr
50
40
30
20
10
0
0 100 200 300 400 500 600
4
3.5
3
[µC]
rr
Q
2.5
2
1.5
25 50 75 100 125
VDS [V]
Tj [°C]
Rev. 1.2 page 8 2005-06-28
17 Typ. reverse recovery charge 18 Typ. reverse recovery charge
Q
=f(IS); di/ dt =100 A/µs Qrr=f(di /dt ); IS=47 A
rr
parameter: T
j
parameter: T
j
SPW47N60CFD
4
3.5
3
125 °C
2.5
2
[µC]
rr
Q
1.5
1
0.5
0
0 1020304050
25 °C
IS [A]
8
7
6
5
4
[µC]
rr
Q
3
2
1
0
0 300 600 900
di/ dt [A/µs]
125 °C
25 °C
Rev. 1.2 page 9 2005-06-28
Definition of diode switching characteristics
SPW47N60CFD
Rev. 1.2 page 10 2005-06-28
PG-TO-247-3-1
SPW47N60CFD
Rev. 1.2 page 11 2005-06-28
SPW47N60CFD
Published by
Infineon Technologies AG
Bereich Kommunikation
St.-Martin-Straße 53
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as
warranted characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices, please contact your
nearest Infineon Technologies office in Germany or our Infineon Technologies representatives worldwide
(see address list).
Warnings
Due to technical requirements, components may contain dangerous substances.
For information on the types in question, please contact your nearest Infineon Technologies office.
Infineon Technologies' components may only be used in life-support devices or systems with the
expressed written approval of Infineon Technologies if a failure of such components can reasonably
be expected to cause the failure of that life-support device or system, or to affect the safety or
effectiveness of that device or system. Life support devices or systems are intended to be implanted
in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail,
it is reasonable to assume that the health of the user or other persons may be endangered.
Rev. 1.2 page 12 2005-06-28
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