Datasheet SPD31N05, SPU31N05 Datasheet (Siemens)

SIPMOS ® Power Transistor

• N channel

• Enhancement mode

• Avalanche-rated

• dv/dt rated

• 175°C operating temperature

SPD31N05 SPU31N05

Pin 1 Pin 2 Pin 3

G D S

Type

SPD31N05 55 V 31 A 0.04 SPU31N05 55 V 31 A 0.04

Maximum Ratings Parameter Symbol Values Unit

V

DS

I

D

R

DS(on

)

Ω Ω

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current

T

= 25 °C

C

Avalanche energy, single pulse

I

= 31 A, VDD = 25 V, RGS = 25

D

L = 291 µH, T

= 25 °C

j

Avalanche current,limited by T Avalanche energy,periodic limited by T

Ω

jmax

Reverse diode dv/dt

Package Ordering Code

P-TO252 Q67040 - S4121 - A2 P-TO251 Q67040 - S4113 - A2

I

D

A 31 22

I

Dpuls

124

E

AS

mJ

140

I

AR

E

AR

dv/dt

31 A

7.5 mJ kV/µs

I

= 31 A, VDS = 40 V, diF/dt = 200 A/µs

S

T

= 175 °C

jmax

Gate source voltage V Power dissipation

T

= 25 °C

C

Semiconductor Group 1 30/Jan/1998

GS

P

tot

6

±

20 V

75

W

SPD31N05 SPU31N05

Maximum Ratings Parameter Symbol Values Unit

Operating temperature T Storage temperature T Thermal resistance, junction - case R Thermal resistance, junction - ambient (PCB mount)** R Thermal resistance, junction - ambient R

j stg

thJC thJA thJA

-55 ... + 175 °C

-55 ... + 175

≤

2 K/W

≤

50

≤

100

IEC climatic category, DIN IEC 68-1 55 / 175 / 56

** when mounted on 1 " square PCB ( FR4 );for recommended footprint

Electrical Characteristics,

Parameter Symbol Values Unit

Static Characteristics

Drain- source breakdown voltage

V

= 0 V, ID = 0.25 mA, Tj = 25 °C

GS

Gate threshold voltage

V

GS=VDS, ID

= 50 µA

Zero gate voltage drain current

V

= 50 V, VGS = 0 V, Tj = -40 °C

DS

V

= 50 V, VGS = 0 V, Tj = 25 °C

DS

V

= 50 V, VGS = 0 V, Tj = 150 °C

DS

Gate-source leakage current

V

= 20 V, VDS = 0 V

GS

Drain-Source on-resistance

V

= 10 V, ID = 22 A

GS

at Tj = 25°C, unless otherwise specified

min. typ. max.

V

(BR)DSS

55 - -

V

GS(th)

2.1 3 4

I

DSS

-

I

GSS

- 10 100

R

DS(on)

- 0.03 0.04

-

0.1

-

V

µA

0.1 1 100

nA

Ω

Semiconductor Group 2 30/Jan/1998

SPD31N05 SPU31N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

≥

V

2

DS

* ID * RDS(on)max, ID

= 22 A

Input capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Output capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Reverse transfer capacitance

V

= 0 V, VDS = 25 V, f = 1 MHz

GS

Turn-on delay time

V

= 30 V, VGS = 10 V, ID = 31 A

DD

= 13

Ω

R

G

Rise time

V

= 30 V, VGS = 10 V, ID = 31 A

DD

= 13

Ω

R

G

Turn-off delay time

V

= 30 V, VGS = 10 V, ID = 31 A

DD

= 13

Ω

R

G

Fall time

V

= 30 V, VGS = 10 V, ID = 31 A

DD

= 13

Ω

R

G

Gate charge at threshold

V

= 40 V, ID ≥ 0.1 A, VGS =0 to 1 V

DD

Gate charge at 7.0 V

V

= 40 V, ID = 31 A, VGS =0 to 7 V

DD

Gate charge total

V

= 40 V, ID = 31 A, VGS =0 to 10 V

DD

Gate plateau voltage

V

= 40 V, ID = 31 A

DD

g

fs

C

iss

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

Q

g(th)

Q

g(7)

Q

g(total)

V

(plateau)

S

10 - -

pF

- 720 900

- 230 300

- 125 160 ns

- 10 15

- 25 40

- 20 30 nC

- 0.7 1

- 20 30

- 25 40 V

- 5.9 -

Semiconductor Group 3 30/Jan/1998

SPD31N05 SPU31N05

Electrical Characteristics,

at Tj = 25°C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Reverse Diode

Inverse diode continuous forward current

T

= 25 °C

C

Inverse diode direct current,pulsed

T

= 25 °C

C

Inverse diode forward voltage

V

= 0 V, IF = 62 A

GS

Reverse recovery time

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

Reverse recovery charge

V

= 30 V, I

R

F=lS, diF

/dt = 100 A/µs

I

V

t

Q

S

SM

SD

rr

A

- - 31

- - 124 V

- 1.2 1.8 ns

- 55 85

rr

µC

- 0.1 0.15

Semiconductor Group 4 30/Jan/1998

SPD31N05 SPU31N05

Power dissipation

P

= ƒ(TC)

tot

80

W

P

tot

60

50

40

30

20

10

0

0 20 40 60 80 100 120 140 °C 180

Drain current

ID = ƒ(TC)

parameter: V

32

A

I

D

24

20

16

12

8

4

0

0 20 40 60 80 100 120 140 °C 180

T

C

GS

≥

10 V

T

C

Safe operating area

ID = ƒ(VDS)

parameter: D = 0, TC = 25°C

3

10

A

I

D

I

=

D

/

DS

V

1

10

2

DS(on)

R

1

0

10

t

= 13.0µs

p

DC

100 µs

1 ms

10 ms

10

V

Transient thermal impedance

Z

= ƒ(tp)

th JC

parameter: D = tp / T

1

10

K/W

0

10

Z

thJC

-1

10

D = 0.50

-2

10

-3

10

single pulse

-4

2

V

DS

10

-7

-6

-5

-4

10

-3

10

0.20

0.10

0.05

0.02

0.01

-2

-1

10

10 0 s

t

p

Semiconductor Group 5 30/Jan/1998

SPD31N05 SPU31N05

Typ. output characteristics

ID = ƒ(VDS)

parameter: tp = 80 µs , T

70

P

= 75W

tot

A

60

I

55

D

50 45 40 35 30 25 20 15 10

5 0

0.0 1.0 2.0 3.0 4.0 V 5.5

l

= 25 °C

j

k

j

i

h

g

f

e

d

c

b

a

VGS [V]

a 4.0 b 4.5 c 5.0 d 5.5 e 6.0 f 6.5 g 7.0 h 7.5 i 8.0 j 9.0 k 10.0 l 20.0

V

DS

Typ. drain-source on-resistance

R

DS (on)

= ƒ(ID)

parameter: tp = 80 µs, Tj = 25 °C

0.13

R

DS (on)

Ω

0.11

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0.00

a

b

c

d

e

V

[V] =

GS

a

b

c

d

e

f

g

4.0

4.5

5.0

5.5

6.0

6.5

7.0

7.5

8.0

9.0

h

0 10 20 30 40 50 A 65

f

10.0

g

h

i

j

i

j

20.0

I

D

Typ. transfer characteristics ID = f (VGS)

parameter: tp = 80 µs

V

≥

2 x

x R

ID

DS(on)max

70

A

50

40

30

20

10

0

0 1 2 3 4 5 6 7 8 V 10

I

DS

D

V

GS

Semiconductor Group 6 30/Jan/1998

SPD31N05 SPU31N05

Drain-source on-resistance

R

DS (on)

= ƒ(Tj)

parameter: ID = 22 A, VGS = 10 V

0.13

Ω

0.11

R

DS (on)

0.10

0.09

0.08

0.07

0.06

0.05

0.04

0.03

0.02

0.01

0.00

-60 -20 20 60 100 °C 180

98%

typ

Gate threshold voltage

V

GS(th)

= f (Tj)

parameter:VGS=VDS, ID =50µA

5.0 V

4.4

V

4.0

GS(th)

3.6

3.2

2.8

2.4

2.0

1.6

1.2

0.8

0.4

0.0

T

j

-60 -20 20 60 100 140 V 200

max

typ

min

T

j

Typ. capacitances

C = f (V

DS

)

parameter:VGS = 0V, f = 1MHz

4

10

C

pF

3

10

2

10

0 5 10 15 20 25 30 V 40

Forward characteristics of reverse diode

IF = ƒ(VSD)

parameter: Tj, tp = 80 µs

3

10

A

I

F

2

10

C

iss

1

10

= 25 °C typ

T

j

= 175 °C typ

T

j

= 25 °C (98%)

C

oss

C

rss

V

DS

0

10

0.0 0.4 0.8 1.2 1.6 2.0 2.4 V 3.0

T

j

Tj = 175 °C (98%)

V

SD

Semiconductor Group 7 30/Jan/1998

SPD31N05 SPU31N05

Avalanche energy EAS = ƒ(Tj)

parameter: ID = 31 A, VDD = 25 V RGS = 25 Ω, L = 291 µH

150

mJ 130 120

E

AS

110 100

90 80 70 60 50 40 30 20 10

0

20 40 60 80 100 120 140 °C 180

Typ. gate charge

VGS = ƒ(Q

parameter: I

16

V

GS

12

10

8

6

4

2

0

T

j

)

Gate

= 31 A

D puls

V

0,2

DS max

0 4 8 12 16 20 24 28 32 nC 38

0,8

V

DS max

Q

Gate

Drain-source breakdown voltage

V

(BR)DSS

V

(BR)DSS

= ƒ(Tj)

65

V

61

59

57

55

53

51

49

-60 -20 20 60 100 °C 180

T

j

Semiconductor Group 8 30/Jan/1998