Datasheet SPW47N60C3 Datasheet (INFINEON)

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jmax

)

jmax

)

A

jmax

A

j

g

SPW47N60C3

Cool MOS™ Power Transistor

Feature

• New revolutionary high voltage technology

• Worldwide best R

DS(on

• Ultra low gate charge

• Periodic avalanche rated

• Extreme dv/dt rated

• Ultra low effective capacitances

Type Package Ordering Code

SPW47N60C3 P-TO247 Q67040-S4491

in TO 247

VDS @ T

Marking

47N60C3

R

DS(on

650 V

0.07 Ω

I

D

47 A

P-TO247

Maximum Ratings

Parameter Symbol Value Unit

Continuous drain current

T

= 25 °C

C

T

= 100 °C

C

Pulsed drain current, tp limited by T

Avalanche energy, single pulse

I

= 10 A, V

D

Avalanche energy, repetitive t

I

= 20 A, V

D

Avalanche current, repetitive t

= 50 V

DD

= 50 V

DD

limited by T

AR

limited by T

R

jmax

I

E

1

E

I

Gate source voltage static V

Gate source voltage AC (f >1Hz)

Power dissipation, T

= 25°C

C

V P

Operating and storage temperature T

D

D puls

AS

AR

R

GS GS tot

T

,

47

30

141

1800 mJ

1

20 A

±20

±30

415 W

st

-55... +150

A

V

°C

Page 1

2003-11-06

SPW47N60C3

)

S

Maximum Ratings

Parameter Symbol Value Unit

Drain Source voltage slope

V

= 480 V, I

DS

= 47 A, T

D

= 125 °C

j

dv/dt 50 V/ns

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Thermal resistance, junction - case

Thermal resistance, junction - ambient, leaded

Soldering temperature,

R

thJC

R

thJA

T

- - 260 °C

sold

- - 0.3 K/W

- - 62

1.6 mm (0.063 in.) from case for 10s

Electrical Characteristics, at Tj=25°C unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Drain-source breakdown voltage

Drain-Source avalanche

V

(BR)DSS

V

(BR)DS

V

=0V, ID=0.25mA 600 - - V

GS

V

=0V, ID=20A - 700 -

GS

breakdown voltage

Gate threshold voltage V

Zero gate voltage drain current I

Gate-source leakage current I

Drain-source on-state resistance R

Gate input resistance

R

GS(th

DSS

GSS

DS(on)

G

I

=2700µΑ, VGS=V

D

VDS=600V, V T

=25°C,

j

T

=150°C

j

VGS=30V, V V

=10V, ID=30A,

GS

T

=25°C

j

T

=150°C

j

f=1MHz, open Drain - 0.62 -

=0V,

GS

=0V - - 100 nA

DS

2.1 3 3.9

D

-

0.5

-

0.06

0.16

25

-

250

0.07

µA

Ω

-

Page 2

2003-11-06

SPW47N60C3

j

Electrical Characteristics , at T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Transconductance g

Input capacitance C Output capacitance C Reverse transfer capacitance C

Effective output capacitance,

2)

C

energy related

Effective output capacitance,

3)

C

fs

iss oss rss

o(er)

o(tr)

VDS≥2*I

I

D

VGS=0V, V f=1MHz

V V

D*RDS(on)max

=30A

=0V,

GS

=0V to 480V

DS

=25V,

DS

,

- 40 - S

- 6800 - pF

- 2200 -

- 145 -

- 193 - pF

- 412 -

time related

Turn-on delay time t Rise time t Turn-off delay time t Fall time t

d(on) r d(off) f

VDD=380V, V

I

=47A, RG=1.8Ω,

D

T

=125

j

=0/13V,

GS

- 18 - ns

- 27 -

- 111 165

- 8 12

Gate Charge Characteristics

Gate to source charge Q Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

1

Repetitve avalanche causes additional power losses that can be calculated as P

2

C

is a fixed capacitance that gives the same stored energy as C

o(er)

3

C

is a fixed capacitance that gives the same charging time as C

o(tr)

gs gd

g

(plateau)

V

=350V, ID=47A - 24 - nC

DD

V

=350V, ID=47A,

DD

V

=0 to 10V

GS

V

=350V, ID=47A - 5.5 - V

DD

while V

oss

while V

oss

- 121 -

- 252 320

=EAR*f.

AV

is rising from 0 to 80% V

DS

is rising from 0 to 80% V

DS

DSS

.

Page 3

2003-11-06

SPW47N60C3

j

Electrical Characteristics, at T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

T

Inverse diode continuous

I

S

=25°C - - 47 A

C

forward current

Inverse diode direct current,

I

SM

- - 141

pulsed

V

Inverse diode forward voltage V

Reverse recovery time t Reverse recovery charge Q Peak reverse recovery current I

Peak rate of fall of reverse

dirr/dt

SD

rr

rrm

=0V, IF=IS - 1 1.2 V

GS

V

=350V, IF=IS ,

R

di

/dt=100A/µs

F

- 580 - ns

- 23 - µC

- 73 - A

- 900 - A/µs

recovery current

Typical Transient Thermal Characteristics

Symbol Value Unit Symbol Value Unit

typ. typ.

Thermal resistance

R

th1

R

th2

R

th3

R

th4

R

th5

R

th6

P

tot

0.002689 K/W

0.005407

0.011

0.054

0.071

0.036

T

R

j T

th1

(t)

C

th1

C

th2

Thermal capacitance

C

th1

C

th2

C

th3

C

th4

C

th5

C

th6

R

th,n

C

th,n

T

case

amb

External Heatsink

0.001081

0.004021

0.005415

0.014

0.025

0.158

Ws/K

Page 4

2003-11-06

SPW47N60C3

1 Power dissipation

P

= f (T

tot

P

500

W

400

350

300

250

200

150

100

50

)

C

SPW47N60C3

0

0 20 40 60 80 100 120

°C

2 Safe operating area

ID = f ( VDS )

parameter : D = 0 , T

3

10

A

2

10

D

1

I

10

0

10

tp = 0.001 ms tp = 0.01 ms

-1

10

-2

160

T

C

10

tp = 0.1 ms tp = 1 ms DC

0

10

=25°C

C

1

10

2

V

DS

10

3

3 Transient thermal impedance

Z

= f (tp)

thJC

parameter: D = tp/T

1

10

K/W

0

10

thJC

-1

Z

10

-2

-3

-4

10

-7

-6

-5

10

-4

D = 0.5 D = 0.2 D = 0.1 D = 0.05 D = 0.02 D = 0.01 single pulse

-3

10

4 Typ. output characteristic

I

= f (VDS); T

D

parameter: t

280

A

200

D

I

160

120

80

40

-2

t

0

10

s

p

0

0 4 8 12 16 20

=25°C

j

= 10 µs, V

p

GS

20V

7.5V

7V

6.5V

6V

5.5V

5V

4.5V

V

26

DS

Page 5

2003-11-06

SPW47N60C3

5 Typ. output characteristic

I

= f (VDS); T

D

parameter: t

160

A

120

D

100

I

80

60

40

20

0

0 4 8 12 16 20

=150°C

j

= 10 µs, V

p

GS

V

20V

6.5V

6V

5.5V

5V

4.5V

4V

DS

26

6 Typ. drain-source on resistance

R

DS(on)

parameter: Tj=150°C, V

=f(I

)

D

0.5

Ω

0.4

DS(on)

0.35

R

0.3

0.25

0.2

0.15

0.1 0 20 40 60 80 100 120

4.5V4V

5V

GS

5.5V

6V

6.5V

A

I

20V

160

D

7 Drain-source on-state resistance

R

DS(on)

parameter : I

R

= f (Tj)

= 47 A, V

D

SPW47N60C3

0.38

Ω

0.32

0.28

DS(on)

0.24

0.2

0.16

0.12

0.08

0.04

0

-60 -20 20 60 100

98%

GS

typ

= 10 V

°C

8 Typ. transfer characteristics

ID= f ( VGS ); V

DS

≥ 2 x I

D

x R

DS(on)max

parameter: tp = 10 µs

280

A

200

D

I

160

120

80

40

180

T

j

0

0 1 2 3 4 5 6 7 8

25°C

V

150°C

10

GS

Page 6

2003-11-06

SPW47N60C3

9 Typ. gate charge

V

GS

= f (Q

Gate

)

parameter: ID = 47 A pulsed

SPW47N60C3

16

V

12

0.2

V

DS max

10

0.8 V

DS max

8

6

4

2

0

0 40 80 120 160 200 240 280 320

V

GS

nC

Q

400

Gate

10 Forward characteristics of body diode

IF = f (VSD)

parameter: Tj , tp = 10 µs

3

SPW47N60C3

10

A

2

10

F

I

1

10

Tj = 25 °C typ

Tj = 150 °C typ

Tj = 25 °C (98%)

Tj = 150 °C (98%)

0

10

0 0.4 0.8 1.2 1.6 2 2.4

3

V

SD

11 Typ. drain current slope

di/dt = f(RG), inductive load, T par.: VDS=380V, V

6000

A/µs

4000

di/dt

3000

2000

1000

di/dt(off)

0

0 2 4 6 8 10 12 14 16

=0/+13V, ID=47A

GS

di/dt(on)

= 125°C

j

R

Ω

12 Typ. switching time

t = f (RG), inductive load, T par.: VDS=380V, V

3

10

td(off)

ns

2

10

t

1

10

0

20

G

10

td(on)

0 2 4 6 8 10 12 14 16

=0/+13V, ID=47 A

GS

=125°C

j

tf

tr

20

Ω

R

G

Page 7

2003-11-06

SPW47N60C3

13 Typ. switching time

t = f (I

), inductive load, T

D

=125°C

j

par.: VDS=380V, VGS=0/+13V, RG=1.8Ω

3

10

ns

2

10

t

1

10

0

10

-1

10

0 10 20 30

tf

tr

td(off)

td(on)

A

I

D

50

14 Typ. drain source voltage slope

dv/dt = f(RG), inductive load, T par.: VDS=380V, V

80

V/ns

dv/dt(off)

60

50

dv/dt

40

30

20

dv/dt(on)

10

0

0 2 4 6 8 10 12 14 16

=0/+13V, ID=47A

GS

= 125°C

j

Ω

R

20

G

15 Typ. switching losses

E = f (I

), inductive load, T

D

=125°C

j

par.: VDS=380V, VGS=0/+13V, RG=1.8Ω

0.4

*) Eon includes SDP06S60 diode commutation losses.

mWs

E

0.2

0.1

0

0 10 20 30

Eoff

Eon*

A

I

D

50

16 Typ. switching losses

E = f(RG), inductive load, T par.: VDS=380V, V

1.4

*) Eon includes SDP06S60 diode commutation losses.

mWs

1

E

0.8

0.6

0.4

0.2

Eoff

0

0 2 4 6 8 10 12 14 16

=0/+13V, ID=47A

GS

=125°C

j

Eon*

Ω

R

20

G

Page 8

2003-11-06

SPW47N60C3

17 Avalanche SOA

IAR = f (tAR)

par.: Tj ≤ 150 °C

20

A

16

14

AR

I

12

10

8

6

4

2

0

-3

-2

10

-1

10 0 10 1 10

18 Avalanche energy

E

= f (T

AS

par.: I

1800

mJ

1400

1200

AS

E

1000

800

600

400

200

2

t

µs

AR

10

4

)

j

= 10 A, V

D

0

25 50 75 100

DD

= 50 V

°C

T

150

j

19 Drain-source breakdown voltage

V

(BR)DSS

V

= f (T

SPW47N60C3

720

V

680

660

640

620

600

580

560

540

-60 -20 20 60 100

)

j

°C

20 Avalanche power losses

P

= f (f )

AR

parameter: E

500

-

AV

P

300

200

100

0

180

T

j

10

4

AR

=1mJ

10

5

Hz

10

6

f

Page 9

2003-11-06

SPW47N60C3

21 Typ. capacitances

C = f (V parameter: V

10

pF

10

C

10

)

DS

=0V, f=1 MHz

GS

5

Ciss

4

3

Coss

2

Crss

1

0 100 200 300 400

V

DS

600

22 Typ. C

E

=f(V

oss

30

µJ

20

oss

E

15

10

5

0

0 100 200 300 400

stored energy

oss

)

DS

V

600

DS

23 Typ. gate threshold voltage

V

parameter: VGS = VDS ; I

= f (Tj)

GS(th)

D

4.25

V

3.25

GS(th)

V

2.75

min.

2.25

1.75

1.25

-75 -50 -25 0 25 50 75 100 125

typ.

= 2.7 mA

max.

°C

T

175

j

Page 10

2003-11-06

Definition of diodes switching characteristics

SPW47N60C3

Page 11

2003-11-06

P-TO-247-3-1

15.9

6.35

ø3.61

SPW47N60C3

5.03

2.03

4.37

6.17

9.91

20.9

1.75

D

1.14

0.243

General tolerance unless otherwise specified: Leadframe parts: ±0.05

D 7

2.97 x 0.127

16

1.2 2

2.92

5.46

5.94

5˚

Package parts: ±0.12

20˚

41.22

0.762 MAX.

+0.05

2.4

Page 12

2003-11-06

SPW47N60C3

Attention please!

The information herein is given to describe certain components and shall not be considered as warranted characteristics.

Terms of delivery and rights to technical change reserved.

We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein.

Infineon Technologies is an approved CECC manufacturer.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Page 13

2003-11-06

Datasheet SPW47N60C3 Datasheet (INFINEON)

Specifications and Main Features

Frequently Asked Questions

User Manual