INFINEON SPW47N60C3 User Manual
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jmax
)
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jmax
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jmax
A
j
g
SPW47N60C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Worldwide best R
DS(on
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
Type Package Ordering Code
SPW47N60C3 P-TO247 Q67040-S4491
in TO 247
VDS @ T
Marking
47N60C3
R
DS(on
650 V
0.07 Ω
I
D
47 A
P-TO247
Maximum Ratings
Parameter Symbol Value Unit
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
= 10 A, V
D
Avalanche energy, repetitive t
I
= 20 A, V
D
Avalanche current, repetitive t
= 50 V
DD
= 50 V
DD
limited by T
AR
limited by T
R
jmax
I
I
E
1
E
I
Gate source voltage static V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C
C
V
P
Operating and storage temperature T
D
D puls
AS
AR
R
GS
GS
tot
T
,
47
30
141
1800 mJ
1
20 A
±20
±30
415 W
st
-55... +150
A
V
°C
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2003-11-06
SPW47N60C3
)
S
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
V
= 480 V, I
DS
= 47 A, T
D
= 125 °C
j
dv/dt 50 V/ns
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Thermal resistance, junction - case
Thermal resistance, junction - ambient, leaded
Soldering temperature,
R
thJC
R
thJA
T
- - 260 °C
sold
- - 0.3 K/W
- - 62
1.6 mm (0.063 in.) from case for 10s
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Drain-source breakdown voltage
Drain-Source avalanche
V
(BR)DSS
V
(BR)DS
V
=0V, ID=0.25mA 600 - - V
GS
V
=0V, ID=20A - 700 -
GS
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
GS(th
DSS
GSS
DS(on)
G
I
=2700µΑ, VGS=V
D
VDS=600V, V
T
=25°C,
j
T
=150°C
j
VGS=30V, V
V
=10V, ID=30A,
GS
T
=25°C
j
T
=150°C
j
f=1MHz, open Drain - 0.62 -
=0V,
GS
=0V - - 100 nA
DS
2.1 3 3.9
D
-
0.5
-
-
-
0.06
0.16
25
-
250
0.07
µA
Ω
-
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2003-11-06
SPW47N60C3
j
Electrical Characteristics , at T
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
2)
C
energy related
Effective output capacitance,
3)
C
fs
iss
oss
rss
o(er)
o(tr)
VDS≥2*I
I
D
VGS=0V, V
f=1MHz
V
V
D*RDS(on)max
=30A
=0V,
GS
=0V to 480V
DS
=25V,
DS
,
- 40 - S
- 6800 - pF
- 2200 -
- 145 -
- 193 - pF
- 412 -
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
d(on)
r
d(off)
f
VDD=380V, V
I
=47A, RG=1.8Ω,
D
T
=125
j
=0/13V,
GS
- 18 - ns
- 27 -
- 111 165
- 8 12
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
1
Repetitve avalanche causes additional power losses that can be calculated as P
2
C
is a fixed capacitance that gives the same stored energy as C
o(er)
3
C
is a fixed capacitance that gives the same charging time as C
o(tr)
gs
gd
g
(plateau)
V
=350V, ID=47A - 24 - nC
DD
V
=350V, ID=47A,
DD
V
=0 to 10V
GS
V
=350V, ID=47A - 5.5 - V
DD
while V
oss
while V
oss
- 121 -
- 252 320
=EAR*f.
AV
is rising from 0 to 80% V
DS
is rising from 0 to 80% V
DS
DSS
DSS
.
.
Page 3
2003-11-06
SPW47N60C3
j
Electrical Characteristics, at T
= 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
T
Inverse diode continuous
I
S
=25°C - - 47 A
C
forward current
Inverse diode direct current,
I
SM
- - 141
pulsed
V
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
dirr/dt
SD
rr
rr
rrm
=0V, IF=IS - 1 1.2 V
GS
V
=350V, IF=IS ,
R
di
/dt=100A/µs
F
- 580 - ns
- 23 - µC
- 73 - A
- 900 - A/µs
recovery current
Typical Transient Thermal Characteristics
Symbol Value Unit Symbol Value Unit
typ. typ.
Thermal resistance
R
th1
R
th2
R
th3
R
th4
R
th5
R
th6
P
tot
0.002689 K/W
0.005407
0.011
0.054
0.071
0.036
T
R
j T
th1
(t)
C
th1
C
th2
Thermal capacitance
C
th1
C
th2
C
th3
C
th4
C
th5
C
th6
R
th,n
C
th,n
T
case
amb
External Heatsink
0.001081
0.004021
0.005415
0.014
0.025
0.158
Ws/K
Page 4
2003-11-06
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