INFINEON SPW35N60C3 User Manual
SPW35N60C3
CoolMOSTM Power Transistor
Features
• New revolutionary high voltage technology
• Ultra low gate charge
Product Summary
VDS@ T
R
DS(on),max
I
D
• Periodic avalanche rated
• Extreme dv /dt rated
• Ultra low effective capacitances
• Improved transconductance
Type Package Ordering Code Marking
j,max
650 V
0.1
34.6 A
PG-TO247
Ω
SPW35N60C3 PG-TO247 Q67040-S4673 35N60C3
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
Drain source voltage slope dv /dt
Gate source voltage
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
1)
AR
AR
1),2)
1)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=17.3 A, VDD=50 V
ID=34.6 A, VDD=50 V
I
V
V
GS
static V
=100 °C
C
=34.6 A,
D
=480 V, Tj=125 °C
DS
Value
34.6
A
21.9
103.8
1500 mJ
1.5
34.6
50
A
V/ns
±20
V
GS
Power dissipation
Operating and storage temperature
Reverse diode dv/dt dv/dt 15 V/ns
6)
P
tot
T
, T
j
AC (f >1 Hz)
TC=25 °C
stg
±30
313
-55 ... 150
W
°C
Rev. 2.4 Page 1 2005-09-21
SPW35N60C3
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature, wavesoldering
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.4 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Avalanche breakdown voltage
V
(BR)DSSVGS
V
(BR)DS
=0 V, ID=250 µA
VGS=0 V, ID=34.6 A
600 - - V
- 700 -
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
Transconductance
V
I
I
R
R
g
GS(th)
DSS
GSS
DS(on)
G
fs
VDS=VGS, ID=1.9 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=21.9 A,
T
=25 °C
j
V
=10 V, ID=21.9 A,
GS
T
=150 °C
j
f =1 MHz, open drain
|VDS|>2|ID|R
I
=21.9 A
D
DS(on)max
,
2.1 3 3.9
- 0.1 1 µA
- - 100
- - 100 nA
- 0.081 0.1
Ω
- 0.2 -
- 0.6 -
-36-S
Rev. 2.4 Page 2 2005-09-21
SPW35N60C3
y
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Effective output capacitance, energy
related
3)
Effective output capacitance, time
related
4)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
C
t
t
t
t
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=25 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
V
=480 V,
DD
V
=10 V, ID=34.6 A,
GS
R
=3.3 Ω
G
- 4500 - pF
- 1500 -
- 100 -
- 180 -
- 324 -
-10-ns
-5-
-70-
-10-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
1)
Pulse width limited by maximum temperature T
2)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
3)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
4)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
6)
ISD<=ID, di/dt<=200A/us, V
Identical low-side and high-side switch.
DClink
Q
Q
Q
V
=400V, V
gs
=480 V,
V
j,max
DD
I
=34.6 A,
D
V
=0 to 10 V
GS
only
gd
g
plateau
peak<VBR, DSS
, Tj<T
-18-nC
-70-
- 150 200
- 5.3 - V
while V DS is rising from 0 to 80% V
oss
while V DS is rising from 0 to 80% V
oss
.
j,max
DSS.
DSS.
Rev. 2.4 Page 3 2005-09-21
SPW35N60C3
y
Parameter Symbol Conditions Unit
Values
min. typ. max.
Reverse Diode
Diode continuous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
T
pical Transient Thermal Characteristics
I
S
I
S,pulse
V
SD
t
rr
Q
I
rrm
T
=25 °C
C
VGS=0 V, IF=34.6 A,
T
=25 °C
j
=480 V, IF=IS,
V
rr
R
di
/dt =100 A/µs
F
- - 34.6 A
- - 103.8
- 0.95 1.2 V
- 600 - ns
-21-µC
-90-A
Symbol Value Unit Symbol Value Unit
typ. typ.
R
th1
R
th2
R
th3
R
th4
R
th5
0.00441 K/W C
0.00608 C
0.0341 C
0.0602 C
0.0884 C
th1
th2
th3
th4
th5
C
th6
0.00037 Ws/K
0.00223
0.00315
0.0179
0.098
5)
4.4
5)
C
models the additional heat capacitance of the package in case of non-ideal cooling. It is not needed if
th6
R
=0 K/W.
thCA
Rev. 2.4 Page 4 2005-09-21
Loading...