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jmax
jmax
AR
j
g
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Cool MOS™ Power Transistor
Feature
• New revolutionary high voltage technology
• Ultra low gate charge
• Periodic avalanche rated
• Extreme dv/dt rated
• Ultra low effective capacitances
• Improved transconductance
P-TO220-3-31
• P-TO-220-3-31: Fully isolated package (2500 VAC; 1 minute)
Type Package Ordering Code
SPP16N50C3 P-TO220-3-1 Q67040-S4583
SPB16N50C3 P-TO263-3-2 Q67040-S4642
SPI16N50C3 P-TO262 Q67040-S4582
SPA16N50C3 P-TO220-3-31
Q67040-S4581
P-TO262 P-TO220-3-1P-TO220-3-31 P-TO263-3-2
3
2
1
Marking
16N50C3
16N50C3
16N50C3
16N50C3
VDS @ T
R
DS(on)
I
D
jmax
560 V
0.28 Ω
16 A
2
-
-
-
3
2
1
Maximum Ratings
Parameter Symbol Value Unit
SPP_B_I SPA
Continuous drain current
T
= 25 °C
C
T
= 100 °C
C
Pulsed drain current, tp limited by T
Avalanche energy, single pulse
I
=8, VDD=50V
D
Avalanche energy, repetitive tAR limited by T
I
=16A, VDD=50V
D
jmax
Avalanche current, repetitive tAR limited by T
Gate source voltage V
Gate source voltage AC (f >1Hz)
Power dissipation, T
= 25°C P
C
2)
I
D
I
D puls
E
AS
E
AR
I
GS
V
GS
tot
16
10
16
10
1)
1)
A
48 48 A
460 460 mJ
0.64 0.64
16 16 A
±20 ±20 V
±30 ±30
160 34 W
Operating and storage temperature T
Page 1
,
T
st
-55...+150 °C
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Maximum Ratings
Parameter Symbol Value Unit
Drain Source voltage slope
VDS = 400 V, ID = 16 A, Tj = 125 °C
dv/dt 50 V/ns
Thermal Characteristics
Parameter
Thermal resistance, junction - case
Thermal resistance, junction - case, FullPAK R
Thermal resistance, junction - ambient, leaded
Thermal resistance, junction - ambient, FullPAK R
Soldering temperature,
1.6 mm (0.063 in.) from case for 10s
3)
Symbol Values Unit
R
thJC
thJC_FP
R
thJA
thJA FP
T
sold
Electrical Characteristics, at Tj=25°C unless otherwise specified
Parameter
Drain-source breakdown voltage
Symbol Conditions Values Unit
V
(BR)DSS
VGS=0V, ID=0.25mA
min. typ. max.
- - 0.78 K/W
- - 3.7
- - 62
- - 80
- - 260 °C
min. typ. max.
500
- - V
Drain-Source avalanche
V
breakdown voltage
Gate threshold voltage V
Zero gate voltage drain current I
Gate-source leakage current I
Drain-source on-state resistance R
Gate input resistance
R
(BR)DS
GS(th)
DSS
GSS
DS(on)
G
VGS=0V, ID=16A - 600 -
ID=675µA, VGS=V
VDS=500V, VGS=0V,
=25°C
T
j
=150°C
T
j
VGS=20V, VDS=0V - - 100 nA
VGS=10V, ID=10A
=25°C
T
j
=150°C
T
j
f=1MHz, open drain - 1.5 -
2.1 3 3.9
DS
-
-
-
-
0.1
-
0.25
0.68
1
100
0.28
-
µA
Ω
Page 2
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Effective output capacitance,
4)
C
energy related
Effective output capacitance,
5)
C
time related
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge
Q
Gate to drain charge Q
fs
iss
oss
rss
o(er)
o(tr)
d(on)
r
d(off)
f
gs
gd
V
≥2*I
DS
D*RDS(on)max
I
=10A
D
VGS=0V, VDS=25V,
f=1MHz
,
- 14 - S
- 1600 - pF
- 800 -
- 30 -
VGS=0V,
V
=0V to 400V
DS
- 64 -
- 124 -
VDD=380V, VGS=0/10V,
I
=16A, RG=4.3Ω
D
- 10 - ns
- 8 -
- 50 -
- 8 -
VDD=380V, ID=16A - 7 - nC
- 36 -
Gate charge total Q
Gate plateau voltage V
1
Limited only by maximum temperature
2
Repetitve avalanche causes additional power losses that can be calculated as P
3
Soldering temperature for TO-263: 220°C, reflow
4
C
is a fixed capacitance that gives the same stored energy as C
o(er)
5
is a fixed capacitance that gives the same charging time as C
C
o(tr)
g
(plateau)
VDD=380V, ID=16A,
=0 to 10V
V
GS
VDD=380V, ID=16A - 5 - V
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
Page 3
- 66 -
=EAR*f.
AV
2004-04-07Rev. 2.1
DSS
DSS
.
.
Electrical Characteristics
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Parameter
Inverse diode continuous
Symbol Conditions Values Unit
I
S
forward current
Inverse diode direct current,
I
SM
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
Peak reverse recovery current I
Peak rate of fall of reverse
SD
rr
rr
rrm
dirr/dt
recovery current
Typical Transient Thermal Characteristics
Symbol
Value Unit Symbol Value Unit
SPP_B_I SPA SPP_B_I SPA
min. typ. max.
TC=25°C - - 16 A
- - 48
VGS=0V, IF=IS - 1 1.2 V
VR=380V, IF=IS ,
di
/dt=100A/µs
F
- 420 - ns
- 7 - µC
- 40 - A
Tj=25°C - 1100 - A/µs
R
R
R
R
R
R
th1
th2
th3
th4
th5
th6
0.012 0.012 K/W C
0.023 0.023 C
0.043 0.043 C
0.149 0.176 C
0.17 0.371 C
0.069 2.522 C
T
R
j T
th1
P
(t)
tot
C
th1
C
th2
R
C
th,n
th,n
th1
th2
th3
th4
th5
th6
0.0002495 0.0002495 Ws/K
0.0009406 0.0009406
0.001298 0.001298
0.00362 0.00362
0.009484 0.008025
0.077 0.412
External Heatsink
T
case
amb
Page 4
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
1 Power dissipation
P
= f (TC)
tot
SPP16N50C3
170
W
140
120
tot
P
100
80
60
40
20
0
0 20 40 60 80 100 120
°C
2 Power dissipation FullPAK
P
= f (TC)
tot
36
W
28
24
tot
P
20
16
12
8
4
160
T
C
0
0 20 40 60 80 100 120
°C
160
T
C
3 Safe operating area
I
= f ( VDS )
D
parameter : D = 0 , T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
10
10
-1
-2
10
0
tp = 1 ms
DC
10
C
1
=25°C
10
4 Safe operating area FullPAK
I
= f (VDS)
D
parameter: D = 0, T
2
10
A
1
10
D
I
0
10
tp = 0.001 ms
tp = 0.01 ms
tp = 0.1 ms
-1
10
-2
2
V
V
DS
10
3
10
10
tp = 1 ms
tp = 10 ms
DC
0
10
C
1
= 25°C
10
2
V
V
DS
10
3
Page 5
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
5 Transient thermal impedance
Z
= f (tp)
thJC
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
10
-7
10
10
/T
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
10
-5
10
-4
10
-3
6 Transient thermal impedance FullPAK
Z
= f (tp)
thJC
parameter: D = t
1
10
K/W
0
10
thJC
-1
Z
10
-2
10
-3
10
-4
-1
10
s
t
p
10
10
-7
10
/t
p
D = 0.5
D = 0.2
D = 0.1
D = 0.05
D = 0.02
D = 0.01
single pulse
-6
-5
-4
-3
-2
10
10
10
10
10
-1
t
1
10
s
p
7 Typ. output characteristic
I
= f (VDS); Tj=25°C
D
parameter: t
60
A
40
D
I
30
20
10
0
0 5 10 15
= 10 µs, V
p
GS
20V
7V
6.5V
V
6V
5.5V
5V
4.5V
V
DS
25
8 Typ. output characteristic
I
= f (VDS); Tj=150°C
D
parameter: t
35
A
25
D
I
20
15
10
5
0
0 5 10 15
= 10 µs, V
p
GS
20V
7V
6V
V
5V
4.5V
4V
V
25
DS
Page 6
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
9 Typ. drain-source on resistance
R
DS(on)
parameter: T
R
=f(ID)
=150°C, V
j
2
Ω
DS(on)
1.2
0.8
0.4
0
0 5 10 15 20
GS
6V5V4.5V4V
A
8V
20V
I
10 Drain-source on-state resistance
R
DS(on)
parameter : I
R
30
D
= f (Tj)
= 10 A, VGS = 10 V
D
SPP16N50C3
1.6
Ω
1.2
DS(on)
1
0.8
0.6
0.4
0.2
0
-60 -20 20 60 100
98%
typ
°C
180
T
j
11 Typ. transfer characteristics
I
= f ( VGS ); V
D
DS
≥ 2 x I
D
x R
DS(on)max
parameter: tp = 10 µs
60
A
50
45
40
D
I
35
30
25
20
15
10
5
0
0 1 2 3 4 5 6 7 8
Tj = 25°C
Tj = 150°C
12 Typ. gate charge
V
= f (Q
GS
parameter: I
SPP16N50C3
16
V
12
GS
10
V
8
6
4
2
10
V
V
GS
0
0 10 20 30 40 50 60 70 80
)
Gate
= 16 A pulsed
D
0,2
V
DS max
0,8 V
DS max
nC
Q
100
Gate
Page 7
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
j
SPI16N50C3, SPA16N50C3
13 Forward characteristics of body diode
I
= f (VSD)
F
parameter: T
2
SPP16N50C3
10
A
1
10
F
I
0
10
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
, tp = 10 µs
Tj = 25 °C typ
Tj = 150 °C typ
Tj = 25 °C (98%)
Tj = 150 °C (98%)
3
V
V
SD
14 Avalanche SOA
I
= f (tAR)
AR
par.: T
I
A
AR
≤ 150 °C
j
16
12
10
8
6
T
4
2
0
-3
10
j(start) = 125°C
-2
10
-1
10
T
j(start)
10 0 10 1 10
= 25°C
2
µs
t
AR
10
4
15 Avalanche energy
E
= f (Tj)
AS
par.: I
= 8 , VDD = 50 V
D
0.5
mJ
AS
E
0.3
0.2
0.1
0
20 40 60 80 100 120
°C
T
16 Drain-source breakdown voltage
V
(BR)DSS
(BR)DSS
V
160
j
= f (Tj)
SPP16N50C3
600
V
570
560
550
540
530
520
510
500
490
480
470
460
450
-60 -20 20 60 100
°C
180
T
j
Page 8
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
17 Avalanche power losses
P
= f (f )
AR
parameter: E
450
W
350
300
AR
P
250
200
150
100
50
0
2
10
=0.64mJ
AR
3
10
10
4
10
18 Typ. capacitances
C = f (V
parameter: V
10
pF
10
C
10
10
5
Hz
10
6
f
10
)
DS
=0V, f=1 MHz
GS
4
Ciss
3
2
1
0
0 100 200 300
Coss
Crss
V
500
V
DS
19 Typ. C
E
=f(VDS)
oss
9
µJ
7
6
oss
E
5
4
3
2
1
0
0 100 200 300
stored energy
oss
V
V
500
DS
Page 9
2004-04-07Rev. 2.1
Definition of diodes switching characteristics
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Page 10
2004-04-07Rev. 2.1
P-TO-220-3-1
±0.4
10
±0.2
3.7
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
B
A
±0.13
1.27
4.44
±0.6
±0.2
2.8
0.05
15.38
±0.5
C
±0.9
5.23
13.5
3x
±0.1
0.75
±0.22
1.17
2.54
2x
M
BA0.25
C
All metal surfaces tin plated, except area of cut.
Metal surface min. x=7.25, y=12.3
P-TO-263-3-2 (D2-PAK)
0.5
2.51
±0.48
9.98
±0.1
±0.2
Page 11
2004-04-07Rev. 2.1
P-TO-262-3-1 (I2-PAK)
±0.2
10
0...0.3
1)
±0.3
8.5
1)
7.55
±0.3
1
11.6
C
±0.2
4.55
0...0.15
1.05
3 x 0.75
2.54
2 x
A
±0.5
13.5
±0.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
B
4.4
1.27
0.05
2.4
2.4
M
BA0.25
C
0.5
±0.2
9.25
±0.1
1)
Typical
Metal surface min. X = 7.25, Y = 6.9
All metal surfaces tin plated, except area of cut.
P-TO-220-3-31 (FullPAK)
Please refer to mounting instructions (application note AN-TO220-3-31-01)
Page 12
2004-04-07Rev. 2.1
SPP16N50C3, SPB16N50C3
SPI16N50C3, SPA16N50C3
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
Page 13
2004-04-07Rev. 2.1
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