Datasheet SPB-3018 Datasheet (SIRENZA)

Page 1
Product Description
e
The SPB-3018 is high-efficiency InGaP/GaAs Heterojuction Bipolar Transistor (HBT) amplifier RFIC. This amplifier incorporates an on-chip Class AB bias circuit which provides excellent efficiency while maintain­ing good linearity. The on-chip bias also allows the device output power (and current) to drive up towards saturation as the input power in­creases. The SPB-3018 is an ideal choice for multi-carrier as well as digital wireless telecom or general wireless applications in the 400-2500 MHz range.
T ypical ACP (IS-95) & Efficiency @ 1960MHz
-30
-35
-40
-45
-50
-55
ACP (dB)
-60
-65
-70
-75 15 16 17 18 19 20 21 22 23 24
ACP 25C Eff . 25C
Chann e l Power (dBm)
22.5 20
17.5 15
12.5 10
7.5 5
2.5 0
Preliminary
SPB-3018
RoHS Compliant
Pb
Green
SPB-3018Z
400 - 2500 MHz 1W Medium Power Active Bias InGaP/GaAs HBT Amplifier
Product Features
• Available in Lead Free, RoHS compliant, & Green packaging
• Efficient Class AB operation
• P1dB = 30 dBm @ 1960MHz
• High Linearity/ACP performance
• MSL 1 moisture rating
Effi ciency %
• Power shutdown using V
Applications
• W-CDMA, PCS, Cellular Systems
• Multi-Carrier Applications
& Packag
(less than 5uA IDQ)
PC
Symbol Parameters Units Frequency Min. Typ. Max.
880 MHz 30
P
1dB
S
21
S
11
ACP
NF Noise Figure dB
V
D
I
DQ
R
, j-l
TH
Test Conditions:
*Device operating current at P1dB ramps up to approximately 420mA @880MHz, 410mA @1960MHz and 370mA @2140MHz
The information provided herein is believed to be reliable at press time. Sirenza Microdevices assumes no responsibility for inaccuracies or omissions. Sirenza Microdevices assumes no responsibility for the use of this information, and all such information shall be entirely at the user’s own risk. Prices and specifications are subject to change without notice. No patent rights or licenses to any of the circuits described herein are implied or granted to any third party. Sirenza Microdevices does not authorize or warrant any Sirenza Microdevices product for use in life-support devices and/or systems. Copyright 2001 Sirenza Microdevices, Inc.. All worldwide rights reserved.
Output Power at 1 dB Compression
Small Signal Gain
Input VSWR
Channel Power
IS-95 at 880/1960MHz, -55dBc ACP WCDMA at 2140MHz, -50dBc ACP
Device Operating Voltage V 4.75 5 5.25 Device Quiescent Current mA 180 220 260 Thermal Resistance (junction - lead) °C/W 30
= 25°C ZO = 50 Ohms
T
a
*
dBm
dBm
dBm
1960 MHz 2140 MHz 30
880 MHz 18 1960 MHz 2140 MHz 13
880 MHz 1.3:1 1960 MHz 1.2:1 2140 MHz 1.3:1
880 MHz 21.5 1960 MHz 2140 MHz 21
880 MHz 5 1960 MHz 2140 MHz 4
12 13.5
30
22
4
15
EDS-103980 Rev C
Page 2
880 MHz Application Circuit Data, Vcc=5V, ID=210mA
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
34
32
30
dBm
28
26
24
0.85 0.86 0.87 0.88 0.89 0.9 0.91
P1dB vs. Fr equenc y
P1dB -40C P1dB 25C P1dB 85C
GHz
Gain vs. Frequency
22
20
18
dB
16
S21_25C
14
S21_-40C S21_85C
12
0.8 0.85 0.9 0.95 1
Frequency (GHz)
-20
-30
-40
-50
-60
IM3 (dBc)
-70
-80 4 6 8 101214161820222426
IM3 vs. Tone Power
IM3L -40C IM3L 25C IM3L 85C
Pout (dBm)
Input/Output Return Loss,
0
-5
-10
-15
dB
-20
-25
-30
0.8 0.85 0.9 0.95 1
Isolation vs. Frequency, T=25C
S11 S12 S22
Frequency (GHz)
ACP vs. Ch. Power(IS-95 9 Ch. Fwd.)
-35
-40
-45
-50
-55
-60
dBc
-65
-70
-75
-80 15 16 17 18 19 20 21 22 23
ACP -40C ACP 85C ACP 25C
18 16 14 12 10
%
8 6 4 2 0
15 16 17 18 19 20 21 22 23
Ch. Pwr (dBm)
Collector Eff i ci ency vs. Ch. Pwr.
Eff. % - 40C Eff. % 85C Eff. % 25C
Ch. Pwr. (dBm)
EDS-103980 Rev C
Page 3
1960 MHz Application Circuit Data, Vcc=5V, ID=210mA
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
34
32
30
P1dB vs. Frequency
dB
28
P1dB -40C
26
24
1.93 1.94 1.95 1.96 1.97 1.98 1.99
P1dB 25C P1dB 85C
GHz
Gain vs. Frequency
17
15
13
dB
11
S21_25C
9
S21_-40C S21_85C
7
1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz)
-20
-30
-40
-50
-60
IM3 (dBc)
-70
-80 6 8 10 12 14 16 18 20 22 24
IM3 vs. Tone Power
IM3_-40C IM3_25C IM3_85C
Pout (dBm)
Input/Output Return Loss,
0
Isolation vs. Frequency, T=25C
-5
-10
-15
dB
-20
-25
S11 S12 S22
-30
1.93 1.94 1.95 1.96 1.97 1.98 1.99
Frequency (GHz)
ACP vs. Ch. Power(IS-95 9 Ch. Fwd.)
-30.0
-35.0
-40.0
-45.0
-50.0
-55.0
dBc
-60.0
-65.0
-70.0
-75.0 15 16 17 18 19 20 21 22 23
A CP -40C ACP 85C ACP 25C
18 16 14 12 10
%
8 6 4 2 0
15 16 17 18 19 20 21 22 23
Ch. Pw r. ( d Bm)
Collector Efficiency vs. Ch. Pwr.
Eff. % -40C Eff. % 85C Eff. % 25C
Ch. Pwr. (dBm)
EDS-103980 Rev C
Page 4
2140 MHz Application Circuit Data, Vcc=5V, ID=210mA
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
34
32
30
P1d B vs. Frequency
dB
28
26
24
2.11 2.12 2.13 2.14 2.15 2.16 2.17
P1dB -40C P1dB 25C P1dB 85C
GHz
Gain vs. Frequency
17
15
13
dB
11
9
S21_25C S21_-40C S21_85C
7
2.11 2.12 2.13 2.14 2.15 2.16 2.17
Frequency (GHz)
-20
-30
-40
-50
-60
IM3 (dBc)
-70
-80 6 8 10 12 14 16 18 20 22 24
IM3 vs. Tone Power
IM3_-40C IM3_25C IM3_85C
Pout (dBm)
Input/Output Return Loss,
0
Isolation vs. Frequency, T=25C
-5
-10
-15
dB
-20
-25
-30
2.11 2.12 2.13 2.14 2.15 2.16 2.17
Frequency (GHz)
S11 S12 S22
ACP vs. Ch. Power(W-CDMA 64 Ch. Fwd.)
-35
-40
-45
-50
dBc
-55
-60
-65 15 16 17 18 19 20 21 22 23
ACP -40C ACP 85C ACP 25C
Ch. P wr. (d Bm)
18 16 14 12 10
%
8 6 4 2 0
15 17 19 21 23
Collector Eff i ciency vs. Ch. Pwr.
Eff. % -40C Eff. % 85C Eff. % 25C
Ch. Pwr. (dBm)
EDS-103980 Rev C
Page 5
Application Schematic for 880 MHz
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
Note: Electrical lengths are determined from
the center of a shunt component and a cut on the center trace
Ζ=50Ω, 3.9°
Ζ=50Ω, 7.5°
Evaluation Board Layout for 880 MHz
3Ω
4.3ΚΩ
Ζ=50Ω, 0.6°
300Ω
Ζ=50Ω, 22.2°
+
Bill of Materials: C1 15pF 0603 Capacitor
C2 5.6pF 0603 Capacitor C3 47pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8 5.6pF 0603 capacitor C9 6.8pF 0603 capacitor R1 300 R2 4.3K R3 3 L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C
Ω 0603 res (5%)
Ω 0603 res (5%)
Ω 0603 res (5%)
EDS-103980 Rev C
Page 6
Application Schematic for 1960 MHz
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
Note: Electrical lengths are determined from
the center of a shunt component and a cut on the center trace
Ζ=50Ω, 11.6°
Ζ=50Ω, 12.1°
Evaluation Board Layout for 1960 MHz
4.3ΚΩ
Ζ=50Ω, 9°
+
300Ω
Ζ=50Ω, 13.1°
Bill of Materials: C1 15pF 0603 Capacitor
C2 2.2pF 0603 Capacitor C3 22pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8 2.7pF 0603 capacitor C9,10 2.2pF 0603 capacitor R1 300 R2 4.3K R3 1.3k L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C
Ω 0603 res (5%)
Ω 0603 res (5%)
Ω 0603 res (5%)
EDS-103980 Rev C
Page 7
Application Schematic for 2140 MHz
Preliminary
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
Note: Electrical lengths are determined from
the center of a shunt component and a cut on the center trace
Ζ=50Ω, 14.4°
Ζ=50Ω, 8°
Evaluation Board Layout for 2140 MHz
4.3ΚΩ
Ζ=50Ω, 10.4°
+
300Ω
Ζ=50Ω, 13.1°
Bill of Materials: C1 15pF 0603 Capacitor
C2 1.8pF 0603 Capacitor C3 22pF 0603 Capacitor C4 1000pF 0603 capacitor C5 10uF Tantalum capacitor C6,C7 0.1uF 0603 capacitor C8,C9 2.2pF 0603 capacitor C10 4.7pF 0603 capacitor
Ω 0603 res (5%)
R1 300 R2 4.3K R3 3K L1 20nH Coilcraft 0805HQ-20NX Inductor Connectors 2x 142-0751-821 Johnson Comp. Heat sink EEF-101407 PCB ECB-101161 Rev. C
Ω 0603 res (5%)
Ω 0603 res (5%)
EDS-103980 Rev C
Page 8
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
Pin # Function Description
1 2 3
4
Vbias
V
PC
RF IN
N/C
Vbias is the bias control pin for the active bias network. Recommended configuration is shown in the Application Schematic.
VPC is the bias control pin for the active bias network. RF input pin. This pin requires the use of an external DC blocking capacitor as shown in the
Application Schematic.
RF output and bias pins. Bias should be supplied to this pin through an external RF choke.
5,6,7,8
RF OUT/
BIAS
Because DC biasing is present on this pin, a DC blocking capacitor should be used in most applications (see application schematic). The supply side of the bias network should be well bypassed. An output matching network is necessary for optimum performance.
Exposed area on the bottom side of the package needs to be soldered to the ground plane of
EPAD
GND
the board for thermal and RF performance. Several vias should be located under the EPAD as shown in the recommended land pattern (page 9).
Preliminary
Simplified Device Schematic
Absolute Maximum Ratings
Parameter Absolute Limit
Max Device Current (I Max Device Voltage (V
DQ
) )
D
400 mA
6 V
Max. RF Input Power +26 dBm
Max. Operating Dissipated
Power (quiescent)
Max. Junction Temp. (T
Operating Temp. Range (T
)
J
)
L
2.0 W
+150°C
-40°C to +85°C
Max. Storage Temp. +150°C
Operation of this device beyond any one of these limits may cause permanent damage. For reliable continuous operation, the device voltage and current must not exceed the maximum operating values specified in the table on page one. Bias Conditions should also satisfy the following expression:
I
< (TJ - TL) / RTH, j-l TL=T
DVD
LEAD
ESD Class 1B, 500V HBM
Appropriate precautions in handling, packaging and testing devices must be observed.
MSL (Moisture Sensitivity Level) Rating: Level 1
EDS-103980 Rev C
Page 9
SPB-3018 400-2500 MHz Cascadable MMIC Amplifier
Part Ordering Information
Part Number Reel Size Devices / Reel
SPB-3018 7" 500
SPB-3018Z 7" 500
Package Outline Drawing
(See SMDI MPO-101644 for tolerances, available on our website)
Preliminary
Recommended Land Pattern
0.150 [3.81]
Plated-Thru Holes
(0.015" Dia, 0.030" Pit ch)
Machine
Screws
0.080 [2.03]
0.050 [1.27]
0.140 [3.56]
0.300 [7.62]
0.020 [0.51]
Note: DIMENSIONS ARE IN INCHES [MM]
EDS-103980 Rev C
Page 10
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