Datasheet SMBT 2222A Datasheet

NPN Silicon Switching Transistor

g

SMBT 2222A

• High DC current gain: 0.1mA to 500 mA

3

• Low collector-emitter saturation voltage

• Complementary type: SMBT 2907A (PNP)

1

VPS05161

Type Marking Pin Configuration Package

SMBT 2222A s1B 1=B 2=E 3=C SOT-23

Maximum Ratings

Parameter Symbol Value Unit

Collector-emitter voltage

Collector-base voltage

Emitter-base voltage 6

DC collector current 600 mA

Total power dissipation, TS = 77 °C
Junction temperature

Storage temperature

V

V

V

I

P

T

T

C

CEO

CBO

EBO

tot

j

st

40 V

75

330

150 °C

-65 ... 150

mW

2

Thermal Resistance

Junction ambient

Junction - soldering point

1) Package mounted on pcb 40mm x 40mm x 1.5mm / 6cm2 Cu

1)

R

R

thJA

thJS

1 Oct-14-1999

≤290

≤220

K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified

SMBT 2222A

Parameter

DC Characteristics

Collector-emitter breakdown voltage

= 10 mA, IB = 0

I

C

Collector-base breakdown voltage

= 10 µA, IB = 0

I

C

Emitter-base breakdown voltage

= 10 µA, IC = 0

I

E

Collector cutoff current

= 60 V, IE = 0

V

CB

Collector cutoff current

= 60 V, IE = 0 , TA = 150 °C

V

CB

Emitter cutoff current

= 3 V, IC = 0

V

EB

Symbol UnitValues

min. max.typ.

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

I

CBO

I

CBO

I

EBO

40 - V-

-75 -

- -6

- nA10-

- - µA10

-- nA10

DC current gain 1)

= 100 µA, VCE = 10 V

I

C

= 1 mA, VCE = 10 V

I

C

= 10 mA, VCE = 10 V

I

C

= 150 mA, VCE = 1 V

I

C

= 150 mA, VCE = 10 V

I

C

= 500 mA, VCE = 10 V

I

C

= 10 mA, VCE = 10 V, TA = 55°C

I

C

Collector-emitter saturation voltage1)

= 150 mA, IB = 15 mA

I

C

= 500 mA, IB = 50 mA

I

C

Base-emitter saturation voltage 1)

= 150 mA, IB = 15 mA

I

C

= 500 mA, IB = 50 mA

I

C

h

FE

V

CEsat

V

BEsat

35

50

75

50

100

40

35

-

-

0.6

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

-

300

-

-

0.3

1

1.2

2

-

V

1) Pulse test: t ≤ 300µs, D = 2%

2 Oct-14-1999

Electrical Characteristics at TA = 25°C, unless otherwise specified

SMBT 2222A

Parameter

AC Characteristics

Transition frequency

= 20 mA, VCE = 20 V, f = 100 MHz

I

C

Collector-base capacitance

= 10 V, f = 1 MHz

V

CB

Emitter-base capacitance

= 0.5 V, f = 1 MHz

V

EB

Noise figure

= 100 µA, VCE = 10 V, RS = 1 kΩ,

I

C

f = 1 kHz, ∆ f = 200 Hz

Short-circuit input impedance

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

= 10 mA, VCE = 10 V, f = 1 kHz

I

C

Open-circuit reverse voltage transf.ratio

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

= 10 mA, VCE = 10 V, f = 1 kHz

I

C

Symbol UnitValues

f

C

C

F

h

h

T

cb

eb

11e

12e

300

- 8 pF-

- - 25

- 4-

2

0.25

-

-

-

-

-

-

max.min. typ.

- MHz-

8

1.25

8

4

dB

kΩ

10

-4

Short-circuit forward current transf.ratio

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

= 10 mA, VCE = 10 V, f = 1 kHz

I

C

Open-circuit output admittance

= 1 mA, VCE = 10 V, f = 1 kHz

I

C

= 10 mA, VCE = 10 V, f = 1 kHz

I

C

Delay time

= 30 V, IC = 150 mA, IB1 = 15 mA,

V

CC

V

BE(off)

= 0.5 V

Rise time

= 30 V, IC = 150 mA, IB1 = 15 mA,

V

CC

V

BE(off)

= 0.5 V

Storage time

= 30 V, IC = 150 mA, IB1=IB2 = 15mA

V

CC

Fall time

= 30 V, IC = 150 mA, IB1=I

V

CC

B2 =

15mA

h

t

d

t

r

t

stg

t

f

21e

22e

50

75

5

25

-

-

300

375

-

-

200

-

- 25-

- - 225

- - 60

35

10 ns-

-

µSh

3 Oct-14-1999