Smart Power High-Side-Switch
)
)
)
for Industrial Applications
ISP 762 T
Features
• Overload protection
• Current limitation
• Short circuit protection
• Thermal shutdown with restart
• ESD - Protection
Product Summary
Overvoltage protection V
Operating voltage V
On-state resistance R
Nominal load current I
Operating temperature T
bb(AZ
bb(on
ON
L(nom
a
• Overvoltage protection (including load dump)
• Fast demagnetization of inductive loads
• Reverse battery protection with external resistor
• CMOS compatible input
• Loss of GND and loss of V
protection
bb
PG-DSO-8
• Very low standby current
Application
• All types of resistive, inductive and capacitive loads
• µC compatible power switch for 12 V and 24 V DC industrial applications
• Replaces electromechanical relays and discrete circuits
41 V
5 ... 34 V
100 mΩ
2 A
-30...+85 °C
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,
monolithically integrated in Smart SIPMOS technology.
Providing embedded protective functions.
Page 1
2006-03-09
Block Diagram
Voltage
source
V
Logic
IN
ESD
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Temperature
sensor
+ V
ISP 762 T
bb
OUT
Load
Pin Symbol Function
1
GND Logic ground
2
3
4
5
6
7
8
OUT Output to the load
NC not connected
Vbb Positive power supply voltage
Vbb Positive power supply voltage
Vbb Positive power supply voltage
Vbb Positive power supply voltage
Pin configuration
GND
Signal GND
miniPROFET
Load GND
IN Input, activates the power switch in case of logic high signal
Top view
•
GND
IN 2 7 Vbb
OUT 3 6 Vbb
NC 4 5 Vbb
1
8
Vbb
Page 2
2006-03-09
ISP 762 T
)
)
Maximum Ratings at Tj = 25 °C, unless otherwise specified
Parameter Symbol Value Unit
Supply voltage V
Supply voltage for full short circuit protection
T
= -40...+150°C
j
V
Continuous input voltage V
Load current (Short - circuit current, see page 5) I
Current through input pin (DC) I
Junction temperature T
Operating temperature T
Storage temperature T
Power dissipation
1)
Inductive load switch-off energy dissipation
1)2)
P
E
single pulse, (see page 8)
Tj =150 °C, Vbb = 13.5 V, IL = 1 A
Load dump protection2) V
R
=2Ω, t
I
R
= 13.5 Ω
L
=400ms, VIN= low or high, VA=13,5V
d
LoadDump
3)
= VA + V
V
S
bb
bb(SC)
IN
L
IN
j
a
stg
tot
AS
Loaddump
40 V
V
bb
-10 ... +16
self limited A
± 5
150 °C
-30...+85
-40 ... +105
1.5 W
870 mJ
60
mA
V
Electrostatic discharge voltage (Human Body Model)
V
ESD
according to ANSI EOS/ESD - S5.1 - 1993
ESD STM5.1 - 1998
Input pin
all other pins
Thermal Characteristics
Thermal resistance @ min. footprint R
Thermal resistance @ 6 cm2 cooling area
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
not subject to production test, specified by design
3
V
Loaddump
Supply voltages higher than V
150Ω resistor in GND connection. A resistor for the protection of the input is integrated.
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839 .
require an external current limit for the GND pin, e.g. with a
bb(AZ)
1)
R
th(JA
th(JA
- 95 - K/W
- 70 83
kV
± 1
± 5
Page 3
2006-03-09
ISP 762 T
j
)
p)
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
= -40...+150°C, V
= 13,5V, unless otherwise specified min. typ. max.
bb
Load Switching Capabilities and Characteristics
On-state resistance
T
= 25 °C, IL = 2 A, Vbb = 9...40 V
j
T
= 150 °C
j
Nominal load current; Device on PCB 1)
T
= 85 °C, T
C
Turn-on time to 90% V
R
= 47 Ω
L
Turn-off time to 10% V
R
= 47 Ω
L
Slew rate on 10 to 30% V
R
= 47 Ω
L
Slew rate off 70 to 40% V
R
= 47 Ω
L
≤ 150 °C
j
OUT
OUT
OUT
OUT
,
,
Operating Parameters
R
ON
I
L(nom)
t
on
t
off
dV/dt
-dV/dt
on
off
-
-
70
140
100
200
mΩ
2 2.4 - A
- 90 170
µs
- 90 230
- 0.8 1.7
V/µs
- 0.8 1.7
Operating voltage V
Undervoltage shutdown of charge pump
T
= -40...+85 °C
j
T
= 150 °C
j
Undervoltage restart of charge pump V
Standby current
T
= -40...+85 °C, VIN = 0 V
j
Tj = 150°C2) , VIN = 0 V
Leakage output current (included in I
bb(off)
)
bb(on
V
bb(under)
bb(u c
I
bb(off)
I
L(off)
5 - 34 V
-
-
- 4 5.5
-
-
- - 5
VIN = 0 V
Operating current
I
GND
- 0.5 1.3 mA
VIN = 5 V
1
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6 cm2 (one layer, 70µm thick) copper area for drain
connection. PCB is vertical without blown air. (see page 16)
2
higher current due temperature sensor
-
-
-
-
4
5.5
10
15
µA
Page 4
2006-03-09
ISP 762 T
j
j
j
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at T
= -40...+150°C, V
Protection Functions
= 13,5V, unless otherwise specified min. typ. max.
bb
1)
Initial peak short circuit current limit (pin 5 to 3)
T
= -40 °C, Vbb = 20 V, tm = 150 µs
j
T
= 25 °C
j
T
= 150 °C
j
Repetitive short circuit current limit
I
L(SCp)
I
L(SCr)
Tj = Tjt (see timing diagrams)
Output clamp (inductive load switch off)
at V
= Vbb - V
OUT
ON(CL)
,
V
Ibb = 4 mA
Overvoltage protection 2)
V
Ibb = 4 mA
Thermal overload trip temperature T
Thermal hysteresis ∆T
Reverse Battery
Reverse battery
Drain-source diode voltage (V
T
= 150 °C
j
3)
OUT
> Vbb)
-V
-V
ON(CL)
bb(AZ)
t
t
bb
ON
-
-
4
10
-
18
-
A
-
-
- 7 -
41 47 - V
41 - -
150 - - °C
- 10 - K
- - 32 V
- 600 - mV
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation .
2
see also V
3
Requires a 150 Ω resistor in GND connection. The reverse load current through the intrinsic drain-source diode has
to be limited by the connected load. Power dissipation is higher compared to normal operating conditions due to the
voltage drop across the drain-source diode. The temperature protection is not active during reverse current operation!
Input current has to be limited (see max. ratings page 3).
in circuit diagram on page 7
ON(CL)
Page 5
2006-03-09
Loading...