ISP 452
Smart Power High-Side-Switch
for Industrial Applications
Features
• Short-circuit protection
• Input protection
• Overtemperature protection with hysteresis
• Overload protection
• Overvoltage protection
• Switching inductive load
• Clamp of negative output voltage with inductive loads
• Undervoltage shutdown
• Maximum current internally limited
• Electrostatic discharge (ESD) protection
• Reverse battery protection
Package: PG-SOT 223
Type
ISP 452
1
)
Ordering code
SP000219823
Application
• µC compatible power switch for 12 V DC grounded loads for industrial applications
• All types of resistive, inductive and capacitive loads
• Replaces electromechanical relays and discrete circuits
4
3
2
1
General Description
• N channel vertical power FET with charge pump, ground referenced CMOS compatible input, monolithically
integrated in Smart SIPMOS® technology.
• Providing embedded protection functions.
1
)
With resistor R
limited by connected load.
=150 Ω in GND connection, resistor in series with IN connections, reverse load current
GND
Page 1 of 10 2006-03-01
ISP 452
Block diagram
+ V
bb
4
OUT
1
Load
IN3
ESDDiode
R
Voltage
source
V
Logic
Voltage
sensor
in
ESD
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Temperature
sensor
GND
MINI-PROFET
2
Signal GND
Load GND
Pin Symbol Function
1 OUT O Protected high-side power output
2 GND - Logic ground
3 IN I Input, activates the power switch in case of logical high signal
4 Vbb + Positive power supply voltage
Page 2 2006-03-01
ISP 452
Maximum Ratings
at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage Vbb 40 V
Load current self-limited IL I
2
Maximum input voltage
)
VIN -5.0...V
L(SC)
bb
A
V
Maximum input current IIN ±5 mA
Inductive load switch-off energy dissipation,
single pulse I
L = 0.5A, Tj, start = 150°C
0.5 J
E
AS
(not tested, specified by design)
3
Load dump protection
R
=2 Ω , td=400ms, IN= low or high, U
I
)
V
LoadDump
= U
+ Vs
A
= 13.5 V
A
V
Load dump
4
)
V
(not tested, specified by design)
R
= 24 Ω
L
R
= 80 Ω
L
Electrostatic discharge capability (ESD)
5
)
PIN 3
V
±1
ESD
PIN 1,2,4
Junction Temperature
Operating temperature range
Storage temperature range
Max. power dissipation (DC)
6
)
T
A = 25 °C
P
Tj
T
a
T
stg
1.8 W
tot
-30 ...+85
-40 ...+105
60
80
±2
150
kV
°C
Thermal resistance chip - soldering point:
chip - ambient:
2
)
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3
)
Supply voltages higher than V
A resistor for the protection of the input is integrated.
4
)
V
Load dump
5
)
HBM according to MIL-STD 883D, Methode 3015.7
6
)
Device on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection.
bb(AZ)
6)
R
R
thJS
thJA
770K/W
Page 3 2006-03-01
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