INFINEON IPW60R045CP User Manual
IPW60R045CP
CoolMOSTM Power Transistor
Features
• Worldwide best R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
CS CoolMOS is specially designed for:
• Hard switching SMPS topologies
in TO247
ds,on
1)
for target applications
Product Summary
V
@ T
DS
jmax
R
DS(on),max
Q
g,typ
650 V
0.045
150 nC
PG-TO247-3-1
Ω
Type Package Ordering Code Marking
IPW60R045CP PG-TO247-3-1 SP000067149 6R045
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=11 A, VDD=50 V
ID=11 A, VDD=50 V
V
V
GS
static V
AC (f >1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...480 V
DS
Value
60
A
38
230
1950 mJ
3
11
50
A
V/ns
±20
±30
431
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 2.0 page 1 2006-06-19
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPW60R045CP
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
44
230
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.29 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=3 mA
VDS=600 V, VGS=0 V,
T
=25 °C
j
V
=600 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=44 A,
T
=25 °C
j
V
=10 V, ID=44 A,
GS
T
=150 °C
j
600 - - V
2.5 3 3.5
- - 10 µA
-50-
- - 100 nA
- 0.04 0.045
- 0.11 -
f =1 MHz, open drain - 1.3 -
Ω
Ω
Rev. 2.0 page 2 2006-06-19
IPW60R045CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
V
=0 V, VDS=0 V
GS
to 480 V
V
=400 V,
DD
V
=10 V, ID=44 A,
GS
=3.3 Ω
R
G
- 6800 - pF
- 320 -
- 310 -
- 820 -
-30-ns
-20-
- 100 -
-10-
Gate Charge Characteristics
Gate to source charge
Q
gs
-34-nC
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
V
gd
g
plateau
=400 V, ID=44 A,
V
DD
V
=0 to 10 V
GS
-51-
- 150 190
- 5.0 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD<=ID, di/dt<=100A/µs,V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
= 400V, Vpeak<V
DClink
V
SD
t
rr
Q
rr
I
rrm
VGS=0 V, IF=44 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
(BR)DSS
, Tj<T
, identical low side and high side switch
jmax
- 0.9 1.2 V
- 600 - ns
-17-µC
-60-A
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
DSS.
DSS.
Rev. 2.0 page 3 2006-06-19
Loading...