IPP90R340C3
CoolMOS™ Power Transistor
Features
• Lowest figure-of-merit R
• Extreme dv/dt rated
• High peak current capability
• Qualified according to JEDEC
• Pb-free lead plating; RoHS compliant
• Worldwide best R
DS,on
• Ultra low gate charge
CoolMOS™ 900V is designed for:
• Quasi Resonant Flyback / Forward topologies
• PC Silverbox and consumer applications
• Industrial SMPS
x Q
ON
1)
in TO220
g
for target applications
Product Summary
V
@ TJ=25°C 900 V
DS
R
DS(on),max
Q
g,typ
@TJ=25°C 0.34
PG-TO220
Ω
94 nC
Type Package Marking
IPP90R340C3 PG-TO220 9R340C
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
J
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=3.1 A, VDD=50 V
ID=3.1 A, VDD=50 V
V
V
GS
static V
AC (f>1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...400 V
DS
Value
15
9.5
34
678 mJ
1
3.1
50
±20
±30
208
A
A
V/ns
W
Operating and storage temperature
T
J
stg
-55 ... 150
°C
, T
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 1.0 page 1 2008-07-29
Maximum ratings, at TJ=25 °C, unless otherwise specified
IPP90R340C3
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 4 V/ns
Parameter Symbol Conditions Unit
Value
9.2
10
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
=25 °C, unless otherwise specified
J
R
thJC
R
thJA
T
sold
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 0.6 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=1 mA
VDS=900 V, VGS=0 V,
T
=25 °C
j
V
=900 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=9.2 A,
T
=25 °C
j
V
=10 V, ID=9.2 A,
GS
T
=150 °C
j
900 - - V
2.5 3 3.5
--2µA
-20-
- - 100 nA
- 0.28 0.34
- 0.76 -
f =1 MHz, open drain - 1.3 -
Ω
Ω
Rev. 1.0 page 2 2008-07-29
IPP90R340C3
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
related
5)
Effective output capacitance, time
related
6)
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 500 V
V
=400 V,
DD
V
=10 V, ID=9.2A,
GS
=23.1 Ω
R
G
- 2400 - pF
- 120 -
-71-
- 280 -
-70-ns
-20-
- 400 -
-25-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
gs
gd
g
plateau
V
=400 V, ID=9.2 A,
DD
V
=0 to 10 V
GS
-11-nC
-41-
- 94 tbd
- 4.6 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD≤ID, di/dt≤200A/µs, V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
DClink
J,max
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=9.2 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, TJ<T
, identical low side and high side switch
J,max
- 0.8 1.2 V
- 510 - ns
-11-µC
-41-A
while VDS is rising from 0 to 50% V
oss
while VDS is rising from 0 to 50% V
oss
DSS
.
DSS.
Rev. 1.0 page 3 2008-07-29
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
250
200
parameter: t
10
2
limited by on-state
resistance
p
IPP90R340C3
1 µs
10 µs
1
10
150
[W]
tot
P
[A]
D
I
100
0
10
50
0
0 25 50 75 100 125 150
TC [°C]
-1
10
1 10 100 1000
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
=f(tP) ID=f(VDS); TJ=25 °C
thJC
parameter: D=t
0
10
/T parameter: V
p
0.5
GS
50
40
100 µs
1 ms
10 ms
DC
10 V
8 V
6 V
[K/W]
10
thJC
Z
10
-1
-2
10
0.2
0.1
0.05
0.02
0.01
single pulse
-5
10
30
[A]
D
I
20
10
0
-4
10
-3
10
-2
tp [s]
10
-1
0 5 10 15 20 25
VDS [V]
5.5 V
5 V
4.5 V
4 V
Rev. 1.0 page 4 2008-07-29
IPP90R340C3
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); TJ=150 °C R
D
parameter: V
GS
=f(ID); TJ=150 °C
DS(on)
parameter: V
GS
25
20
15
4.5 V
[A]
D
I
10
4 V
5
0
0 5 10 15 20 25
VDS [V]
8 V
10 V
5 V
20 V
6 V
5
4
3
]
Ω
[
DS(on)
R
2
1
4 V
4.5 V
0
0 5 10 15 20 25 30
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID=9.2 A; VGS=10 V ID=f(VGS); VDS=20V
DS(on)
parameter: T
J
10 V
5 V
4.8 V
1
0.8
0.6
]
Ω
[
DS(on)
R
0.4
98 %
typ
0.2
0
-60 -20 20 60 100 140 180
TJ [°C]
50
25 °C
40
30
[A]
D
I
20
150 °C
10
0
0246810
VGS [V]
Rev. 1.0 page 5 2008-07-29
IPP90R340C3
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID=9.2 A pulsed IF=f(VSD)
gate
DD
10
parameter: T
2
10
J
25 °C, 98%
[V]
GS
V
8
1
10
6
400 V
720 V
[A]
F
I
150 °C
25 °C
4
0
10
2
0
0 20406080100
Q
[nC]
gate
-1
10
0 0.5 1 1.5 2
VSD [V]
11 Avalanche energy 12 Drain-source breakdown voltage
E
=f(TJ); ID=3.1A; VDD=50 V V
AS
700
=f(TJ); ID=0.25 mA
BR(DSS)
1050
150 °C, 98%
600
1000
500
400
[mJ]
AS
E
300
[V]
BR(DSS)
V
950
900
200
850
100
0
25 50 75 100 125 150
TJ [°C]
800
-60 -20 20 60 100 140 180
TJ [°C]
Rev. 1.0 page 6 2008-07-29
IPP90R340C3
13 Typ. capacitances 14 Typ. C
C =f(V
); VGS=0 V; f =1 MHz E
DS
4
10
Ciss
3
10
10
2
Coss
C [pF]
1
10
Crss
0
10
0 100 200 300 400 500 600
VDS [V]
= f(VDS)
oss
[µJ]
oss
E
12
10
8
6
4
2
0
stored energy
oss
0 100 200 300 400 500 600
VDS [V]
Rev. 1.0 page 7 2008-07-29
Definition of diode switching characteristics
IPP90R340C3
Rev. 1.0 page 8 2008-07-29
PG-TO220 Outlines
IPP90R340C3
Dimensions in mm/inches
Rev. 1.0 page 9 2008-07-29
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2008 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office (www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
IPP90R340C3
Rev. 1.0 page 10 2008-07-29
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