IPP50R299CP
CoolMOSTM Power Transistor
Features
• Lowest figure of merit R
• Ultra low gate charge
• Extreme dv/dt rated
• High peak current capability
• Pb-free lead plating; RoHS compliant
• Quailfied according to JEDEC
CoolMOS CP is designed for:
• Hard- & soft switching SMPS topologies
• CCM PFC for Notebook adapter, PDP and LCD TV
• PWM for Notebook adapter, PDP and LCD TV
ON
x Q
g
1)
for target applications
Product Summary
V
DS @Tjmax
R
DS(on),max
Q
g,typ
PG-TO220
550 V
0.299
23 nC
Ω
Type Package Marking
IPP50R299CP PG-TO220 5R299P
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Avalanche energy, single pulse
Avalanche energy, repetitive t
Avalanche current, repetitive t
MOSFET dv /dt ruggedness dv /dt
Gate source voltage
Power dissipation
=25 °C, unless otherwise specified
j
I
D
TC=25 °C
T
2)
AR
AR
2),3)
2),3)
I
D,pulse
E
AS
E
AR
I
AR
TC=25 °C
ID=4.4 A, VDD=50 V
ID=4.4 A, VDD=50 V
V
V
GS
static V
AC (f>1 Hz)
P
tot
TC=25 °C
=100 °C
C
=0...400 V
DS
Value
12
8
26
289 mJ
0.44
4.4
50
±20
±30
104
A
A
V/ns
W
Operating and storage temperature
T
j
stg
-55 ... 150
°C
, T
Mounting torque M3 and M3.5 screws 60 Ncm
Rev. 2.0 page 1 2007-11-06
Maximum ratings, at Tj=25 °C, unless otherwise specified
IPP50R299CP
Parameter Symbol Conditions Unit
Continuous diode forward current
Diode pulse current
Reverse diode dv /dt
2)
4)
I
S
I
S,pulse
T
C
=25 °C
dv /dt 15 V/ns
Parameter Symbol Conditions Unit
Value
6.6
26
Values
A
min. typ. max.
Thermal characteristics
Thermal resistance, junction - case
Thermal resistance, junction ambient
Soldering temperature,
wavesoldering only allowed at leads
Electrical characteristics, at T
R
thJC
R
thJA
T
sold
=25 °C, unless otherwise specified
j
leaded - - 62
1.6 mm (0.063 in.)
from case for 10 s
- - 1.2 K/W
- - 260 °C
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Zero gate voltage drain current
Gate-source leakage current
Drain-source on-state resistance
Gate resistance
V
(BR)DSSVGS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
G
=0 V, ID=250 µA
VDS=VGS, ID=0.44 mA
VDS=500 V, VGS=0 V,
T
=25 °C
j
V
=500 V, VGS=0 V,
DS
T
=150 °C
j
VGS=20 V, VDS=0 V
VGS=10 V, ID=6.6 A,
T
=25 °C
j
V
=10 V, ID=6.6 A,
GS
T
=150 °C
j
500 - - V
2.5 3 3.5
--1µA
-10-
- - 100 nA
- 0.27 0.299
- 0.68 -
f =1 MHz, open drain - 2.2 -
Ω
Ω
Rev. 2.0 page 2 2007-11-06
IPP50R299CP
Parameter Symbol Conditions Unit
Values
min. typ. max.
Dynamic characteristics
Input capacitance
Output capacitance
Effective output capacitance, energy
5)
related
Effective output capacitance, time
6)
related
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
C
t
t
t
t
iss
oss
o(er)
o(tr)
d(on)
r
d(off)
f
=0 V, VDS=100 V,
V
GS
f =1 MHz
=0 V, VDS=0 V
V
GS
to 400 V
V
=400 V,
DD
V
=10 V, ID=6.6 A,
GS
=27.9 Ω
R
G
- 1190 - pF
-53-
-50-
- 110 -
-35-ns
-14-
-80-
-12-
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Gate plateau voltage
Q
Q
Q
V
gs
gd
g
plateau
V
=400 V, ID=6.6 A,
DD
V
=0 to 10 V
GS
-5-nC
-7-
-2331
- 5.2 - V
Reverse Diode
Diode forward voltage
Reverse recovery time
Reverse recovery charge
Peak reverse recovery current
1)
J-STD20 and JESD22
2)
Pulse width tp limited by T
3)
Repetitive avalanche causes additional power losses that can be calculated as PAV=EAR*f.
4)
ISD≤ID, di /dt ≤200A/µs, V
5)
C
is a fixed capacitance that gives the same stored energy as C
o(er)
6)
C
is a fixed capacitance that gives the same charging time as C
o(tr)
j,max
DClink
=400V, V
V
SD
t
rr
Q
rr
I
rrm
peak<V(BR)DSS
VGS=0 V, IF=6.6 A,
T
=25 °C
j
VR=400 V, IF=IS,
di
/dt =100 A/µs
F
, Tj<T
, identical low and high side switch
jmax
while VDS is rising from 0 to 80% V
oss
while VDS is rising from 0 to 80% V
oss
- 0.9 1.2 V
- 260 - ns
- 2.6 - µC
-21-A
DSS.
DSS.
Rev. 2.0 page 3 2007-11-06
1 Power dissipation 2 Safe operating area
P
=f(TC) ID=f(VDS); TC=25 °C; D =0
tot
parameter: t
120
10
p
2
IPP50R299CP
100
[W]
tot
P
80
60
40
[A]
D
I
10
10
1
0
limited by on-state
resistance
20
-1
0
0 25 50 75 100 125 150 175
TC [°C]
10
10
0
10
1
VDS [V]
3 Max. transient thermal impedance 4 Typ. output characteristics
Z
=f(tp); ID=f(VDS); Tj=25 °C
(thJC)
parameter: D=t
1
10
/T parameter: V
p
30
GS
20 V
DC
1 ms
10 ms
10
100 µs
2
10 µs
1 µs
10
3
25
10 V
8 V
0
10
[K/W]
thJC
Z
10
10
-1
-2
10
0.5
0.2
0.1
0.05
0.02
0.01
single pulse
-5
10
-4
10
-3
10
-2
10
-1
tp [s]
[A]
D
I
20
15
7 V
6 V
5.5 V
10
5
5 V
4.5 V
0
0 5 10 15 20
VDS [V]
Rev. 2.0 page 4 2007-11-06
IPP50R299CP
5 Typ. output characteristics 6 Typ. drain-source on-state resistance
I
=f(VDS); Tj=150 °C R
D
parameter: V
GS
=f(ID); Tj=150 °C
DS(on)
parameter: V
GS
15
12
20 V
10 V
8 V
7 V
6 V
9
[A]
D
I
6
3
0
0 5 10 15 20
VDS [V]
5.5 V
5 V
4.5 V
1.5
1.3
1.1
]
Ω
[
R
DS(on)
0.9
5.5 V
0.7
0.5
0 5 10 15 20 25 30
ID [A]
7 Drain-source on-state resistance 8 Typ. transfer characteristics
R
=f(Tj); ID=6.6 A; VGS=10 V ID=f(VGS); |VDS|>2|ID|R
DS(on)
parameter: T
j
DS(on)max
6 V
6.5 V
10 V
7 V
]
Ω
[
DS(on)
R
0.8
0.7
0.6
0.5
0.4
typ
[A]
D
I
40
25 °C
35
30
25
150 °C
20
15
0.3
0.2
0.1
-60 -20 20 60 100 140 180
98 %
Tj [°C]
10
5
0
0246810
VGS [V]
Rev. 2.0 page 5 2007-11-06
IPP50R299CP
9 Typ. gate charge 10 Forward characteristics of reverse diode
V
=f(Q
GS
parameter: V
); ID=6.6 A pulsed IF=f(VSD)
gate
DD
10
8
100 V
6
400 V
parameter: T
2
10
1
10
j
25 °C, 98%
150 °C
25 °C
150 °C, 98%
[V]
GS
V
[A]
F
I
4
0
10
2
-1
0
0 5 10 15 20 25
Q
[nC]
gate
10
0 0.5 1 1.5 2
VSD [V]
11 Avalanche energy 12 Drain-source breakdown voltage
E
=f(Tj); ID=4.4 A; VDD=50 V V
AS
300
250
200
=f(Tj); ID=0.25 mA
BR(DSS)
580
560
540
520
[V]
150
[mJ]
AS
E
BR(DSS)
500
V
100
480
50
0
25 75 125 175
Tj [°C]
460
440
-60 -20 20 60 100 140 180
Tj [°C]
Rev. 2.0 page 6 2007-11-06
13 Typ. capacitances 14 Typ. Coss stored energy
IPP50R299CP
C =f(V
[pF]
C
); VGS=0 V; f =1 MHz E
DS
4
10
Ciss
3
10
10
10
10
2
1
0
Coss
Crss
0 100 200 300 400 500
[V]
V
DS
= f(VDS)
oss
6
5
4
[µJ]
3
oss
E
2
1
0
0 100 200 300 400 500
VDS [V]
Rev. 2.0 page 7 2007-11-06
Definition of diode switching characteristics
IPP50R299CP
Rev. 2.0 page 8 2007-11-06
PG-TO220-3-1/PG-TO220-3-21: Outlines
IPP50R299CP
Rev. 2.0 page 9 2007-11-06
Published by
Infineon Technologies AG
81726 Munich, Germany
© 2007 Infineon Technologies AG
All Rights Reserved.
Legal Disclaimer
The information given in this document shall in no event be regarded as a guarantee of
conditions or characteristics. With respect to any examples or hints given herein, any typical
values stated herein and/or any information regarding the application of the device,
Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind,
including without limitation, warranties of non-infringement of intellectual property rights
of any third party.
Information
For further information on technology, delivery terms and conditions and prices, please
contact the nearest Infineon Technologies Office
(www.infineon.com).
Warnings
Due to technical requirements, components may contain dangerous substances. For information
on the types in question, please contact the nearest Infineon Technologies Office.
Infineon Technologies components may be used in life-support devices or systems only with
the express written approval of Infineon Technologies, if a failure of such components can
reasonably be expected to cause the failure of that life-support device or system or to affect
the safety or effectiveness of that device or system. Life support devices or systems are
intended to be implanted in the human body or to support and/or maintain and sustain
and/or protect human life. If they fail, it is reasonable to assume that the health of the user
or other persons may be endangered.
IPP50R299CP
Rev. 2.0 page 10 2007-11-06
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