Datasheet IGP06N60T Datasheet

IGP06N60T

TRENCHSTOP™ Series q

Low Loss IGBT : IGBT in TRENCHSTOP™ and Fieldstop technology

Features:

 Very low V
 Maximum Junction Temperature 175°C
 Short circuit withstand time 5s
 TRENCHSTOP™ and Fieldstop technology for 600V applications offers :

- very tight parameter distribution

- high ruggedness, temperature stable behavior

 Low EMI
 Qualified according to JEDEC1for target applications
 Pb-free lead plating; RoHS compliant
 Complete product spectrum and PSpice Models : http://www.infineon.com/igbt/

Applications:

 Variable Speed Drive for washing machines and air conditioners
 Buck converters

Type V

IGP06N60T 600V 6A 1.5V

1.5V (typ.)

CE(sat)

CEIC;Tc=100°CVCE(sat),Tj=25°CTj,max

175C

G

PG-TO220-3

Marking Package

G06T60 PG-TO220-3

Maximum Ratings
Parameter Symbol Value Unit

C

E

Collector-emitter voltage, Tj ≥ 25C
DC collector current, limited by T

jmax

TC= 25C

V

CE

I

C

TC= 100C

Pulsed collector current, tplimited by T

jmax

Turn off safe operating area, VCE= 600V, Tj= 175C, tp= 1µs
Gate-emitter voltage
Short circuit withstand time

2)

VGE= 15V, VCC 400V, Tj 150C
Power dissipation

TC= 25C

Operating junction temperature
Storage temperature

I

Cpuls

­V

GE

t

SC

P

tot

T

j

T

stg

Soldering temperature
wavesoldering, 1.6 mm (0.063 in.) from case for 10s

1

J-STD-020 and JESD-022

2)

Allowed number of short circuits: <1000; time between short circuits: >1s.

600 V

12

6

18
18

20

5

88 W

-40...+175

-55...+150
260

A

V

s

C

IFAG IPC TD VLS

1 Rev. 2.3 20.09.2013

IGP06N60T

TRENCHSTOP™ Series q

Thermal Resistance
Parameter Symbol Conditions Max. Value Unit
Characteristic

IGBT thermal resistance,
junction – case
Thermal resistance,
junction – ambient

Electrical Characteristic, at Tj= 25 C, unless otherwise specified

Parameter Symbol Conditions

Static Characteristic

Collector-emitter breakdown voltage

Collector-emitter saturation voltage

Gate-emitter threshold voltage

Zero gate voltage collector current

Gate-emitter leakage current
Transconductance
Integrated gate resistor

R

thJC

R

thJA

V

(BR)CESVGE

V

CE(sat)

V

GE(th)

I

CES

I

GES

g

fs

R

Gint

=0V,

IC=0.25mA
VGE= 15V, IC=6A
Tj=25C
Tj=175C
IC=0.18mA,
VCE=V

GE

VCE=600V,
VGE=0V

Tj=25C
Tj=175C
VCE=0V,VGE=20V
VCE=20V, IC=6A

1.7 K/W

62

Value

min. typ. max.

600 - - V

-

-

1.5

1.8

2.05

4.1 4.6 5.7

-

-

-

-

40

700

- - 100 nA

- 3.6 - S

none Ω

Unit

µA

Dynamic Characteristic

Input capacitance
Output capacitance
Reverse transfer capacitance
Gate charge

C
C
C
Q

iss

oss
rss
Gate

VCE=25V,
VGE=0V,
f=1MHz

VCC=480V, IC=6A
VGE=15V

Internal emitter inductance

L

E

measured 5mm (0.197 in.) from case
Short circuit collector current

1)

I

C(SC)

VGE=15V,tSC 5s
VCC= 400V,
Tj= 25 C

1)

Allowed number of short circuits: <1000; time between short circuits: >1s.

IFAG IPC TD VLS

2 Rev. 2.3 20.09.2013

- 368 - pF

- 28 -

- 11 -

- 42 - nC

- 7 - nH

- 55 - A

TRENCHSTOP™ Series q

Switching Characteristic, Inductive Load, at Tj=25 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Switching Characteristic, Inductive Load, at Tj=175 C

Parameter Symbol Conditions

IGBT Characteristic

Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

Tj=25C,
VCC=400V,IC=6A,
VGE=0/15V,rG=23,
L=60nH,C=40pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Diode used IDP06E60

Tj=175C,
VCC=400V,IC=6A,
VGE=0/15V,rG= 23
L=60nH,C=40pF

L, Cfrom Fig. E

Energy losses include
“tail” and diode reverse
recovery.

Diode used IDP06E60

IGP06N60T

Value

Unit

min. typ. max.

- 9 - ns

- 6 -

- 130 -

- 58 -

- 0.09 - mJ

- 0.11 -

- 0.2 -

Value

Unit

min. typ. max.

- 9 - ns

- 8 -

- 165 -

- 84 -

- 0.14 - mJ

- 0.18 -

- 0.335 -

IFAG IPC TD VLS

3 Rev. 2.3 20.09.2013

18A

Figur

e1.

Collector current as a function of

Figure

2.Safe operating area

Figure

3.Power dissipation as a function of

Figure

4.Collector current as a function of

I

c

I

c

IGP06N60T

TRENCHSTOP™ Series q

tp=1µs

10A

5µs

15A

TC=80°C

12A

9A

6A

, COLLECTOR CURRENT

C

I

3A

0A

100Hz 1kHz 10kHz 100kHz

TC=110°C

f, SWITCHINGFREQUENCY VCE, COLLECTOR-EMITTER VOLTAGE

switching frequency

(Tj 175C, D = 0.5, VCE= 400V,
VGE= 0/15V, rG= 23)

1A

, COLLECTOR CURRENT

C

I

0,1A

1V 10V 100V 1000V

(D = 0, TC= 25C,
Tj175C;VGE=0/15V)

10µs

50µs

500µs

5ms

DC

80W

60W

40W

, POWER DISSIPATION

tot

P

20W

0W

25°C 50°C 75°C 100°C 125°C 150°C

TC, CASE TEMPERATURE TC, CASE TEMPERATURE

case temperature

(Tj 175C)

15A

10A

5A

, COLLECTOR CURRENT

C

I

0A

25°C 75°C 125°C

case temperature

(VGE 15V, Tj 175C)

IFAG IPC TD VLS

4 Rev. 2.3 20.09.2013