Page 1
Datasheet Please read the Important Notice and Warnings at the end of this document V 2.1
www.infineon.com page 1 of 21 2018-08-20
IM818-MCC Datasheet
CIPOS™ Maxi IM818
IM818-MCC
Description
The CIPOS™ Maxi IM818 product group offers the chance for integrating various power and control
components to increase reliability, optimize PCB size and system costs. It is designed to control three phase AC
motors and permanent magnet motors in variable speed drives applications such as low power motor drives (GPI,
Servo drives), pumps, fan drives and active filter for HVAC(Heating, Ventilation, and Air Conditioning). The
product concept is specially adapted to power applications, which need good thermal performance and
electrical isolation as well as EMI save control and overload protection.
Three phase inverter with 1200V TRENCHSTOP™ IGBTs and Emitter Controlled diodes are combined with an
optimized 6-channel SOI gate driver for excellent electrical performance.
Features
Fully isolated Dual In-Line molded module
1200V TRENCHSTOP™ IGBT4
Rugged 1200V SOI gate driver technology with stability
against transient and negative voltage
Allowable negative VS potential up to -11 V
for signal transmission at VBS = 15 V
Integrated bootstrap functionality
Over current shutdown
Built-in NTC thermistor for temperature monitor
Under-voltage lockout at all channels
Low side emitter pins accessible
for all phase current monitoring (open emitter)
Cross-conduction prevention
All of 6 switches turn off during protection
Programmable fault clear timing and enable input
Lead-free terminal plating; RoHS compliant
Potential applications
Fan drives and active filter for HVAC, pumps, and low power motor drives (GPI, Servo Drives)
Product validation
Qualified for industrial applications according to the relevant tests of JEDEC47/20/22.
Table 1 Part Ordering Table
Product Name
Package Type
Standard Pack
Orderable Part Number
Form
MOQ
IM818-MCC
DIP 36x23D
14 pcs / tube
280
IM818MCCXKMA1
Page 2
Datasheet 2 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Table of Contents
Table of Contents
1 Internal Electrical Schematic ................................................................................................... 3
2 Pin Configuration ................................................................................................................... 4
2.1 Pin Assignment ........................................................................................................................................ 4
2.2 Pin Description ........................................................................................................................................ 5
3 Absolute Maximum Ratings ..................................................................................................... 7
3.1 Module Section ........................................................................................................................................ 7
3.2 Inverter Section ....................................................................................................................................... 7
3.3 Control Section ........................................................................................................................................ 7
4 Thermal Characteirstics .......................................................................................................... 8
5 Recommended Operation Conditions ....................................................................................... 9
6 Static Parameters ................................................................................................................. 10
6.1 Inverter Section ..................................................................................................................................... 10
6.2 Control Section ...................................................................................................................................... 10
7 Dynamic Parameters ............................................................................................................. 11
7.1 Inverter Section ..................................................................................................................................... 11
7.2 Control Section ...................................................................................................................................... 11
8 Thermistor Characteristics ..................................................................................................... 12
9 Mechanical Characteristics and Ratings ................................................................................... 13
10 Qualification Information....................................................................................................... 14
11 Diagrams and Tables ............................................................................................................. 15
11.1 TC Measurement Point ........................................................................................................................... 15
11.2 Backside Curvature Measurement Point .............................................................................................. 15
11.3 Switching Time Definition ..................................................................................................................... 16
12 Application Guide .................................................................................................................. 17
12.1 Typical Application Schematic ............................................................................................................. 17
12.2 Performance Charts .............................................................................................................................. 18
13 Package Outline .................................................................................................................... 19
Revision history............................................................................................................................. 20
Page 3
Datasheet 3 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Internal Electrical Schematic
1 Internal Electrical Schematic
VSS
VDD
LIN3
LIN2
LIN1
RFE
ITRIP
LO3
LO2
LO1
HO1
HO2
HO3
VB1
VS1
VB2
VS2
VB3
VS3
HIN3
HIN2
HIN1
NW (18)
NV (19)
W (21)
V (22)
U (23)
P (24)
(2) VB(U)
(15) ITRIP
(14) RFE
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(16) VSS
(13) VDD
(4) VB(V)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(1) VS(U)
(3) VS(V)
(5) VS(W)
NU (20)
Thermistor
RBS1
RBS2
RBS3
(17) VTH
Figure 1 Internal electrical schematic
Page 4
Datasheet 4 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Pin Configuration
2 Pin Configuration
2.1 Pin Assignment
Bottom View
(1) VS(U)
(2) VB(U)
(3) VS(V)
(4) VB(V)
(5) VS(W)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(13) VDD
(14) RFE
(15) ITRIP
(16) VSS
(24) P
(23) U
(22) V
(21) W
(20) NU
(19) NV
(18) NW
(17) VTH
Figure 2 Module pinout
Table 2 Pin Assignment
Pin Number
Pin name
Pin Description
1
VS(U)
U-phase high side floating IC supply offset voltage
2
VB(U)
U-phase high side floating IC supply voltage
3
VS(V)
V-phase high side floating IC supply offset voltage
4
VB(V)
V-phase high side floating IC supply voltage
5
VS(W)
W-phase high side floating IC supply offset voltage
6
VB(W)
W-phase high side floating IC supply voltage
7
HIN(U)
U-phase high side gate driver input
8
HIN(V)
V-phase high side gate driver input
9
HIN(W)
W-phase high side gate driver input
10
LIN(U)
U-phase low side gate driver input
11
LIN(V)
V-phase low side gate driver input
12
LIN(W)
W-phase low side gate driver input
13
VDD
Low side control supply
Page 5
Datasheet 5 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Pin Configuration
Pin Number
Pin name
Pin Description
14
RFE
Programmable fault clear time, fault output, enable input
15
ITRIP
Over current shutdown input
16
VSS
Low side control negative supply
17
VTH
Thermistor
18
NW
W-phase low side emitter
19
NV
V-phase low side emitter
20
NU
U-phase low side emitter
21
W
Motor W-phase output
22
V
Motor V-phase output
23
U
Motor U-phase output
24
P
Positive bus input voltage
2.2 Pin Description
HIN(U, V, W) and LIN(U, V, W) (Low side and high
side control pins, Pin 7 - 12)
These pins are positive logic and they are
responsible for the control of the integrated IGBTs.
The schmitt-trigger input thresholds of them are
such to guarantee LSTTL and CMOS compatibility
down to 3.3 V controller outputs. Pull-down resistor
of about 5 k is internally provided to pre-bias
inputs during supply start-up. Input schmitt-trigger
and noise filter provide beneficial noise rejection to
short input pulses.
The noise filter suppresses control pulses which are
below the filter time t
FIL,IN
. The filter acts according to
Figure 4.
CIPOS
TM
INPUT NOISE
FILTER
k5
Schmitt-Trigger
SWITCH LEVEL
VIH; V
IL
VSS
HINx
LINx
Figure 3 Input pin structure
HIN
LIN
HO
LO
low
high
t
FIL,IN
t
FIL,IN
a) b)
HIN
LIN
HO
LO
Figure 4 Input filter timing diagram
It is not recommended for proper work to provide
input pulse-width lower than 1 µs.
The integrated gate driver provides additionally a
shoot through prevention capability which avoids
the simultaneous on-state of two gate drivers of the
same leg (i.e. HO1 and LO1, HO2 and LO2, HO3 and
LO3). When two inputs of a same leg are activated,
only former activated one is activated so that the leg
is kept steadily in a safe state.
A minimum deadtime insertion of typically 360 ns is
also provided by driver IC, in order to reduce crossconduction of the external power switches.
RFE (Fault / Fault clear time / Enable, Pin 14)
The RFE pin conbines three functions in one pin:
programmable fault clear time by RC-network, faultout and enable input.
The programmable fault-clear time can be adjusted
by RC network, which is external pull-up resistor and
capacitor. For example, typical value is about 1ms at
1 MΩand 2 nF.
The fault-out indicates a module failure in case of
under voltage at pin VDD or in case of triggered over
current detection at ITRIP.
The microcontroller can pull this pin low to disable
the IPM functionality. This is enable function.
Page 6
Datasheet 6 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Pin Configuration
RFE
VSS
1
R
ON,FLT
From ITRIP - Latch
From UV detection
CIPOS
NOISE FILTER
Schmitt-Trigger
Bi-direction
Figure 5 Internal circuit at pin RFE
VTH (Thermistor, Pin 17)
The VTH pin provides direct access to the NTC,
which is referenced to VSS. An external pull-up
resistor connected to +5 V ensures that the resulting
voltage can be directly connected to the
microcontroller.
ITRIP (Over current detection function, Pin 15)
IM818 provides an over current detection function
by connecting the ITRIP input with the IGBT
collector current feedback. The ITRIP comparator
threshold (typ. 0.5 V) is referenced to VSS ground. An
input noise filter (t
ITRIP
= typ. 500 ns) prevents the
driver to detect false over-current events.
Over current detection generates a shutdown of all
outputs of the gate driver after the shutdown
propagation delay of typically 1µs.
Fault-clear time is set to typical 1.1ms at R
RCIN
= 1 M
Ω and C
RCIN
= 2 nF.
VDD, VSS (Low side control supply and
reference, Pin 13, 16)
VDD is the control supply and it provides power both
to input logic and to output power stage. Input logic
is referenced to VSS ground.
The under-voltage circuit enables the device to
operate at power on when a supply voltage of at
least a typical voltage of V
DDUV+
= 12.2 V is present.
The IC shuts down all the gate drivers power outputs,
when the VDD supply voltage is below V
DDUV-
= 11.2 V.
This prevents the external power switches from
critically low gate voltage levels during on-state and
therefore from excessive power dissipation.
VB(U, V, W) and VS(U, V, W) (High side supplies,
Pin 1 - 6)
VB to VS is the high side supply voltage. The high side
circuit can float with respect to VSS following the
external high side power device emitter voltage.
Due to the low power consumption, the floating
driver stage is supplied by integrated bootstrap
circuit.
The under-voltage detection operates with a rising
supply threshold of typical V
BSUV+
= 11.2 V and a
falling threshold of V
BSUV-
= 10.2 V.
VS(U, V, W) provide a high robustness against
negative voltage in respect of VSS of -50 V transiently.
This ensures very stable designs even under rough
conditions.
NW, NV, NU (Low side emitter, Pin 18 - 20)
The low side emitters are available for current
measurements of each phase leg. It is
recommended to keep the connection to pin VSS as
short as possible in order to avoid unnecessary
inductive voltage drops.
W, V, U (High side emitter and low side collector,
Pin 21 - 23)
These pins are motor U, V, W input pins.
P (Positive bus input voltage, Pin 24)
The high side IGBTs are connected to the bus
voltage. It is noted that the bus voltage does not
exceed 900 V.
Page 7
Datasheet 7 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Absolute Maximum Ratings
3 Absolute Maximum Ratings
(V
DD
= 15V and TJ = 25°C, if not stated otherwise)
3.1 Module Section
Description
Symbol
Condition
Value
Unit
Storage temperature range
T
STG
-40 ~ 125
°C
Operating case temperature
TC
Refer to Figure 6
-40 ~ 125
°C
Operating junction temperature
TJ -40 ~150
°C
Isolation test voltage
V
ISO
1min, RMS, f = 60Hz
2500
V
3.2 Inverter Section
Description
Symbol
Condition
Value
Unit
Max. blocking voltage
V
CES/VRRM
1200
V
DC link supply voltage of P-N
VPN
Applied between P-N
900
V
DC link supply voltage (surge) of P-N
V
PN(surge)
Applied between P-N
1000
V
DC collector current
IC
TC = 25°C, TJ < 150°C
±16
A
TC = 80°C, TJ < 150°C
±10
Peak collector current
ICP
TC = 25°C, tp < 1 ms
±20
A
Power dissipation per IGBT
P
tot
67.5
W
Short circuit withstand time1
tSC
VDC ≤ 800 V, TJ = 150°C
10
µs
3.3 Control Section
Description
Symbol
Condition
Value
Unit
High Side offset voltage
VS 1200
V
Repetitive peak reverse voltage of
bootstrap diode
V
RRM
1200
V
Module control supply voltage
VDD -1 ~ 20
V
High side floating supply voltage
(VB reference to VS)
VBS -1 ~ 20
V
Input voltage(LIN, HIN, ITRIP, RFE)
VIN -1 ~ VDD + 0.3
V
1
Allowed number of short circuits: < 1000; Time between short circuits: > 1 s.
Page 8
Datasheet 8 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Thermal Characteirstics
4 Thermal Characteirstics
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
Single IGBT thermal
resistance, junction-case
R
thJC
High side V-phase IGBT
- - 1.85
K/W
Single diode thermal
resistance, junction-case
R
thJC,D
High side V-phase diode
- - 2.50
K/W
Page 9
Datasheet 9 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Recommended Operation Conditions
5 Recommended Operation Conditions
All voltages are absolute voltages referenced to VSS -potential unless otherwise specified.
Description
Symbol
Value
Unit
Min.
Typ.
Max.
DC link supply voltage of P-N
VPN
350
600
800
V
Low side supply voltage
VDD
13.5
15
18.5
V
High side floating supply voltage (VB vs. VS)
VBS
12.5
-
18.5
V
Logic input voltages LIN, HIN, ITRIP, RFE
VIN 0 - 5 V
PWM carrier frequency
F
PWM
- -
20
kHz
External dead time between HIN & LIN
DT
0.5 - -
µs
Voltage between VSS - N (including surge)
V
COMP
-5 - 5
V
Minimum input pulse width
PW
IN(ON)
PW
IN(OFF)
1 - -
µs
Control supply variation
ΔV
BS,
ΔVDD
-1
-1 - - 1 1
V/µs
Page 10
Datasheet 10 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Static Parameters
6 Static Parameters
(V
DD
= 15V and TJ = 25°C, if not stated otherwise)
6.1 Inverter Section
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
Collector-Emitter saturation voltage
V
CE(sat)
IC = 10 A
TJ = 25°C
150°C
-
-
2.0
2.6
2.4
-
V
Collector-Emitter leakage current
I
CES
VCE = 1200 V
- - 1
mA
Diode forward voltage
VF
IF = 10 A
TJ = 25°C
150°C
-
-
1.75
1.75
2.25
-
V
6.2 Control Section
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
Logic "1" input voltage (LIN, HIN)
VIH
-
1.9
2.3
V
Logic "0" input voltage (LIN, HIN)
VIL
0.7
0.9
-
V
ITRIP positive going threshold
V
IT,TH+
475
500
525
mV
ITRIP input hysteresis
V
IT,HYS
-
55
-
mV
VDD and VBS supply under voltage
positive going threshold
V
DDUV+
V
BSUV+
11.5
10.5
12.2
11.2
13.0
12.0
V
VDD / VBS supply under voltage negative
going threshold
V
DDUV-
V
BSUV-
10.5
9.5
11.2
10.2
12.0
11.0
V
VDD / VBS supply under voltage lockout
hysteresis
V
DDUVH
V
BSUVH
- 1 - V
Quiescent VBx supply current (VBx only)
I
QBS
H
IN
= 0 V
-
175
-
µA
Quiescent VDD supply current (VDD only)
I
QDD
L
IN
= 0 V, H
INX
= 5 V
- 1 -
mA
Input bias current for LIN, HIN
I
IN+
V
IN
= 5 V - 1 - mA
Input bias current for ITRIP
I
ITRIP+
V
ITRIP
= 5 V
-
30
100
µA
Input bias current for RFE
I
RFE
V
RFE
= 5 V,
V
ITRIP
= 0 V
- - 5
µA
RFE output voltage
V
RFE
I
RFE
= 10 mA,
V
ITRIP
= 1 V
-
0.4 - V
V
RFE
positive going threshold
V
RFE,TH+
-
1.9
2.3
V
V
RFE
negative going threshold
V
RFE,TH-
0.7
0.9 - V
Bootstrap diode forward voltage
V
F_BSD
IF = 0.3 mA
-
0.9 - V
Bootstrap diode resistance
R
BSD
Between VF = 4 V
and VF = 5 V
-
120
-
Ω
Page 11
Datasheet 11 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Dynamic Parameters
7 Dynamic Parameters
(V
DD
= 15V and TJ = 25°C, if not stated otherwise)
7.1 Inverter Section
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
Turn-on propagation delay time
ton
V
LIN, HIN
= 5 V,
IC = 10 A,
VDC = 600 V
-
800
-
ns
Turn-on rise time
tr - 45
-
ns
Turn-on switching time
t
c(on)
- 230
-
ns
Reverse recovery time
trr - 420
-
ns
Turn-off propagation delay time
t
off
V
LIN, HIN
= 5 V,
IC = 10 A,
VDC = 600 V
-
960
-
ns
Turn-off fall time
tf - 100
-
ns
Turn-off switching time
t
c(off)
- 200
-
ns
Short circuit propagation delay time
t
SCP
From V
IT,TH+
to 10%
ISC
-
1200
-
ns
IGBT turn-on energy (includes
reverse recovery of diode)
Eon
VDC = 600 V,
IC = 10 A
TJ = 25°C
150°C
-
-
1.1
1.6
-
-
mJ
IGBT turn-off energy
E
off
VDC = 600 V,
IC = 10 A
TJ = 25°C
150°C
-
-
0.6
0.9
-
-
mJ
Diode recovery energy
E
rec
V
DC
= 600 V,
IC = 10 A
TJ = 25°C
150°C
-
-
0.3
0.6
-
-
mJ
7.2 Control Section
Description
Symbol
Condition
Value
Unit
Min.
Typ.
Max.
Input filter time ITRIP
t
ITRIP
V
ITRIP
= 1 V
-
500 - ns
Input filter time at LIN, HIN for
turn on and off
t
FIL,IN
V
LIN, HIN
= 0 V or 5 V
-
350 - ns
Fault clear time after ITRIP-fault
t
FLT,CLR
V
ITRIP
= 1V,
V
pull-up
= 5V
(R = 1 MΩ, C = 2 nF)
1.1 - ms
ITRIP to Fault propagation delay
t
FLT
VLIN, HIN = 0 or 5 V,
VITRIP = 1V
-
650
900
ns
Internal deadtime
DTIC
V
IN
= 0 or VIN = 5 V
300 - -
ns
Matching propagation delay
time (On & Off) all channels
MT
External dead time > 500ns
- - 130
ns
Page 12
Datasheet 12 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Thermistor Characteristics
8 Thermistor Characteristics
Description
Condition
Symbol
Value
Unit
Min.
Typ.
Max.
Resistor
T
NTC
= 25°C
R
NTC
-
85
-
kΩ
B-constant of NTC
(Negative Temperature Coefficient)
B(25/100)
-
4092
-
K
-40 -30 -20 -10 0 10 20 30 40 50 60 70 80 90 100 110 120 130
0
500
1000
1500
2000
2500
3000
3500
Thermistor temperature [℃]
Thermistor resistance
[
k
Ω
]
Figure 6 Thermistor resistance – temperature curve and table
(For more information, please refer to the application note ‘AN2018-09 CIPOS™ Maxi IM818 application note’)
50 55 60 65 70 75 80 85 90 95 100 105 110 115 120 125 130
0
5
10
15
20
25
30
35
Thermistor temperature [℃]
Thermistor resistance
[
k
Ω
]
Min.
Typ.
Max.
Page 13
Datasheet 13 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Mechanical Characteristics and Ratings
9 Mechanical Characteristics and Ratings
Description
Condition
Value
Unit
Min.
Typ.
Max.
Comparative Tracking Index(CTI)
600 - -
Mounting torque
M3 screw and washer
0.49
-
0.78
Nm
Backside Curvature
Refer to Figure 8
0 - 150
µm
Weight -
7.1 - g
Page 14
Datasheet 14 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Qualification Information
10 Qualification Information
UL Certification
File number E314539
Moisture sensitivity level
(SOP package only)
-
RoHS Compliant
Yes (Lead-free terminal plating)
ESD(Electrostatic
Discharge)
HBM(Human body model)
Class as per JESD22-A114
2 (>2000V to < 4000V)
CDM(Charged Device model)
Class as per JESD22-C101
C3 (>=1000V)
Page 15
Datasheet 15 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Diagrams and Tables
11 Diagrams and Tables
11.1 T
C
Measurement Point
Figure 7 T
C
measurement point1
11.2 Backside Curvature Measurement Point
Figure 8 Backside curvature measurement position
1
Any measurement except for the specified point in Figure 7 is not relevant for the temperature verification and
brings wrong or different information.
Page 16
Datasheet 16 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Diagrams and Tables
11.3 Switching Time Definition
HINx
LINx
i
Cx
v
CEx
0.9V
2.1V
90%
10%
10%
10%
90%
t
off
t
f
t
on
t
r
t
c(off)
t
c(on)
10%
t
rr
10%
Figure 9 Switching times definition
Page 17
Datasheet 17 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Application Guide
12 Application Guide
12.1 Typical Application Schematic
VDD line
5 or
3.3V line
U-phase current sensing
NW (18)
NV (19)
W (21)
V (22)
U (23)
P (24)
(2) VB(U)
(15) ITRIP
(14) RFE
(10) LIN(U)
(11) LIN(V)
(12) LIN(W)
(16) VSS
(13) VDD
(4) VB(V)
(6) VB(W)
(7) HIN(U)
(8) HIN(V)
(9) HIN(W)
(1) VS(U)
(3) VS(V)
(5) VS(W)
NU (20)
Thermistor
VSS
VDD
LIN3
LIN2
LIN1
RFE
ITRIP
LO3
LO2
LO1
HO1
HO2
HO3
VB1
VS1
VB2
VS2
VB3
VS3
HIN3
HIN2
HIN1
RBS1
RBS2
RBS3
<Signal for protection>
Temperature monitor
Micro
Controller
#1
#2
#3.1
#4
#5
#6
#7
3-ph AC
Motor
V-phase current sensing
W-phase current sensing
<Signal for protection>
Power
GND line
Control
GND line
(17) VTH
5 or
3.3V line
#3.2
Figure 10 Typical application circuit
1. Input circuit
- To reduce input signal noise by high speed switching, the R
IN
and CIN filter circuit should be mounted. (100 Ω, 1 nF)
- C
IN
should be placed as close to VSS pin as possible.
2. Itrip circuit
- To prevent protection function errors, C
ITRIP
should be placed as close to Itrip and VSS pins as possible.
3. RFE circuit
3.1 Pull-up resistor and pull-down capacitor
- RFE output is an open drain output. This signal line should be pulled up to the positive side of the 5 V / 3.3 V logic
power supply with a proper resistor RPU.
- The fault-clear time is adjusted by RC network of a pull-up resistor, a pull-down capacitor and pull-up voltage.
t
FLTCLR
= -R
pull-up
∙ C
pull-down
∙ ln(1- V
RFE,TH+/Vpull-up
) + internal fault-clear time 160 s
t
FLTCLR
= -1 M x 2 nF x ln(1 - 1.9 / 5 V) + 160 s 1.1 ms at R = 1 M, C = 2 nF and V
pull-up
= 5 V
A pull-up resistor is limited to max. 2 M
3.2 RC filter
- It is recommended that RC filter be placed as close to the controller as possible.
4. VB-VS circuit
- Capacitor for high side floating supply voltage should be placed as close to VB and VS pins as possible.
5. Snubber capacitor
- The wiring between IM818 and snubber capacitor including shunt resistor should be as short as possible.
6. Shunt resistor
- The shunt resistor of SMD type should be used for reducing its stray inductance.
7. Ground pattern
- Ground pattern should be separated at only one point of shunt resistor as short as possible.
Page 18
Datasheet 18 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Application Guide
12.2 Performance Charts
0 10 20 30 40 50 60 70 80 90 100 110 120 130 140
0
1
2
3
4
5
6
7
8
9
10
F
SW
=15kHz
F
SW
=5kHz
V
DC
=600V, V
DD
=V
BS
=15V, SVPWM
T
J
≤150℃ , T
C
≤125
o
C, M.I.=0.8, P.F.=0.8
Maximum Output Current, I
O
[
A
rms
]
Case Temperature, T
C
[℃ ]
IM818-MCC
Figure 11 Maximum operating current SOA
1
1
This maximum operating current SOA is just one of example based on typical characteristics for this product. It
can be changed by each user’s actual operating conditions.
Page 19
Datasheet 19 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Package Outline
13 Package Outline
Page 20
Datasheet 20 of 21 V 2.1
2018-08-20
CIPOS™ Maxi IM818
IM818-MCC
Revision history
Revision history
Document
version
Date of release
Description of changes
V2.1
August, 2018
Minor changed - Figure7, section 4(thermal resistance), section
10(qualification information), section 13(package outline)
V2.0
June, 2018
Initial release
Page 21
Published by
Infineon Technologies AG
81726 München, Germany
© 2018 Infineon Technologies AG.
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Edition 2018-08-20
ifx1
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