Infineon FZ1200R33KL2 Data Sheet
Technische Information / Technical Information
j
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage T
Kollektor-Dauergleichstrom
DC-collector current T
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
t - value, Diode
I
= 25°C
T
= -25°C 3300
j
T
= 80°C
C
= 25 °C
C
= 1 ms, TC = 80°C I
t
P
=25°C, Transistor P
T
C
= 1 ms I
t
P
= 0V, tp = 10ms, TVj = 125°C
V
R
vorläufiges Datenblatt
preliminary datasheet
V
CES
I
C,nom.
I
C
CRM
tot
V
GES
I
F
FRM
2
I
tA
3300
1200 A
2300 A
2400 A
14,7 kW
+/- 20V V
1200 A
2400 A
440.000
V
2
s
Spitzenverlustleistung der Diode
maximum power dissipation diode
Isolations-Prüfspannung
insulation test voltage
Teilentladungs-Aussetzspannung
partial discharge extinction voltage
T
= 125°C P
j
RMS, f = 50 Hz, t = 1 min.
RMS, f = 50 Hz, Q
£ 10 pC (acc. to IEC 1287)
PD
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
= 1200A, VGE = 15V, Tvj = 25°C V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Gateladung
gate charge
Kollektor-Emitter Reststrom
collector-emitter cut-off current
C
= 1200A, VGE = 15V, Tvj = 125°C
I
C
= 120 mA, VCE = VGE, Tvj = 25°C V
I
C
f = 1MHz,T
f = 1MHz,T
V
GE
V
CE
= 25°C,VCE = 25V, VGE = 0V C
vj
= 25°C,VCE = 25V, VGE = 0V C
vj
= -15V ... + 15V, VCE = 1800V Q
= 3300V, VGE = 0V, Tvj = 25°C I
V
V
RQM
ISOL
ISOL
min. typ. max.
CE sat
GE(th)
ies
res
CES
- 3,00 3,65 V
- 3,70 4,45 V
4,2 5,1 6,0 V
- 145 - nF
-8-nF
-22-µC
G
1.500 kW
6.000 V
2.600 V
mA--5
Gate-Emitter Reststrom
gate-emitter leakage current
V
= 0V, VGE = 20V, Tvj = 25°C I
CE
GES
- - 400 nA
prepared by: J. Biermann date of publication : 2002-04-23
approved by: Christoh Lübke; 2002-04-30 revision: 3
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FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
= 1200 A, VCC = 1800V
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
C
= ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
V
GE
VGE = ±15V, RG = 2,7W, C
I
= 1200 A, VCC = 1800V
C
= ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
V
GE
VGE = ±15V, RG = 2,7W, C
I
= 1200 A, VCC = 1800V
C
= ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
V
GE
VGE = ±15V, RG = 2,7W, C
I
= 1200 A, VCC = 1800V
C
= ±15V, RG = 2,7W, CGE = 330nF, Tvj = 25°C
V
GE
= ±15V, RG = 2,7W, C
V
GE
I
= 1200 A, VCC = 1800V, VGE = 15V
C
= 1,2W, C
R
G
I
= 1200 A, VCC = 1800V, VGE = 15V
C
= 2,7W, C
R
G
= 330nF, T
GE
= 330nF, T
GE
tP £ 10µsec, VGE £ 15V
TVj£125°C, VCC=2500V, V
= 330nF,T
GE
= 330nF,T
GE
= 330nF,T
GE
= 330nF,T
GE
= 125°C, LS = 40nH
vj
= 125°C, LS = 40nH
vj
CEmax=VCES -LsCE
= 125°C - 700 ns
vj
= 125°C - 450 ns
vj
= 125°C - 2700 - ns
vj
= 125°C - 330 - ns
vj
·dI/dt
vorläufiges Datenblatt
preliminary datasheet
min. typ. max.
t
d,on
t
r
t
d,off
t
f
E
on
E
off
I
SC
L
sCE
- 700 ns
- 450 ns
- 2500 - ns
- 220 - ns
- 2700 - mWs
- 1590 - mWs
- 5200 - A
- 10 - nH
Modul-Leitungswiderstand, Anschlüsse - Chip
lead resistance, terminals - chip
T = 25°C
Charakteristische Werte / Characteristic values
Diode / Diode
I
= 1200 A, VGE = 0V, Tvj = 25°C V
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
F
= 1200 A, VGE = 0V, Tvj = 125°C
I
F
= 1200 A, - diF/dt = 4900 A/µsec
I
F
V
= 1800V, VGE = -10V, Tvj = 25°C I
R
V
= 1800V, VGE = -10V, Tvj = 125°C
R
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C Q
V
= 1800V, VGE = -10V, Tvj = 125°C
R
IF = 1200 A, - diF/dt = 4900 A/µsec
VR = 1800V, VGE = -10V, Tvj = 25°C E
V
= 1800V, VGE = -10V, Tvj = 125°C
R
R
CC'+EE'
- 0,12 - mW
min. typ. max.
- 2,60 3,35 V
F
- 2,45 3,30 V
RM
rec
- 1180 - A
- 1300 - A
- 650 - µAs
r
- 1200 - µAs
- 430 - mWs
- 1150 - mWs
2 (9)
FZ1200R33KL2_V Rev3.xls
Technische Information / Technical Information
g
IGBT-Module
IGBT-Modules
FZ 1200 R 33 KL2
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässi
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
e Sperrschichttemperatur
Transistor / transistor, DC
Diode/Diode, DC - - 0,0170 K/W
pro Modul / per module
= 1 W/m*K / l
l
Paste
grease
= 1 W/m*K
vorläufiges Datenblatt
preliminary datasheet
min. typ. max.
R
thJC
R
thCK
T
vj
T
vj op
T
stg
- - 0,0085 K/W
- 0,006 - K/W
- - 150 °C
-40 - 125 °C
-40 - 125 °C
Mechanische Eigenschaften / Mechanical properties
Gehäuse, siehe Anlage
case, see appendix
Material Modulgrundplatte
material of module baseplate
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
terminals M4 M2 2 Nm
terminals M8 8 .. 10 Nm
AlSiC
AlN
32,2 mm
19,1 mm
> 400
M1 5 Nm
G 1500 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
3 (9)
FZ1200R33KL2_V Rev3.xls
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