Infineon FZ1200R17KF4 Data Sheet
M a r k e t i n g I n f o r m a t i o n
FZ 1200 R 17 KF4
Europea n Powe r Semico n ducto r and
Electr onic s Compan y
screwing depth
max. 8
31,5
M4
28
C
16,5
61,5
130
1 1 4
E
G
2,5
18,5
18
C
E
7
M8
C
E
ex ter nal co nne cti on
(to be done)
C
C
G
E
E
C
E
external connection
(to be done)
IGBT-Module FZ 1200 R 17 KF4
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kolle kto r- Em itter- Sperrspa nnun g co ll ect or -em it ter vol tage V
Kolle kto r- Dau erg le ic hst rom DC-collector current I
Peri odi scher K oll ek tor Spitzen st rom repetitive peak collector current tp=1 ms I
Ge sa mt -V erlus tl ei st un g total power dissipation tC=25°C, Transistor /transistor P
Ga te -E mi tt er -S pi tz en sp an nung gate-emitter peak voltage V
Dauergleichstrom DC forward current I
Peri odi scher S pitz enstrom repetitive peak forw. current tp=1ms I
Isolations-Prüfspannung insulati on te st voltage RMS, f=50 Hz, t= 1 min. V
Charakteristische Werte / Characteristic values: Transistor
Kolle kto r- Em itter Sä tti gung sspan nung collect or -em itt er satu rat io n vo lt age iC=1,2kA, vGE=15V, tvj=25°C v
CES
C
CRM
tot
GE
F
FRM
ISOL
CE sat
mi n. typ. max.
- 3,5 3,9 V
iC=1,2kA, vGE=15V, tvj=125°C - 4,6 5 V
Ga te -S ch we ll en sp an nu ng gate threshold voltage iC=80mA, vCE=vGE, tvj=25°C v
Einga ng ska pa zit ät input capaci ty
fO=1MHz,tvj=25°C,vCE=25V, vGE=0V
Kolle kto r- Em itter Reststrom co ll ect or -em it ter cut -off cur rent vCE=1700V, vGE=0V, tvj=25°C i
vCE=1700V, vGE=0V, tvj=125°C - 80 - mA
Ga te -E mi tt er R es ts tr om gate leakage current vCE=0V, vGE=20V, tvj=25°C i
Emitt er-G ate Res ts tr om gate leakage current vCE=0V, v
=20V, tvj=25°C i
E G
Eins cha ltz ei t (indu kti ve Las t) turn-on time (inductive load) iC=1,2kA,vCE=900V,vL=±15V t
GE(TO)
C
ies
CES
GES
EGS
on
4,5 5,5 6,5 V
- 180 - nF
- 8 - mA
- - 400 nA
- - 400 nA
RG=1,8Ω, tvj=25°C - 0,8 - µs
RG=1,8Ω, tvj=125°C - 1 - µs
Speic her zeit ( induk ti ve Las t) st or age tim e (in ducti ve lo ad) iC=1,2kA,vCE=900V,vL=±15V t
s
RG=1,8Ω, tvj=25°C - 1,1 - µs
RG=1,8Ω, tvj=125°C - 1,3 - µs
Fallzeit (induktive Last) fall time (inductive load) iC=1,2kA,vCE=900V,vL=±15V t
f
RG=1,8Ω, tvj=25°C - 0,25 - µs
RG=1,8Ω, tvj=125°C - 0,3 - µs
Charakteristische Werte / Characteristic values
Tr an s is t or / Tr a ns is t or
Eins cha ltv er lus ten er gie pro Pu ls turn-on energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V E
on
RG=1,8Ω, tvj=125°C, LS=70nH - 490 - mWs
Absc hal tve rl us tene rgie pr o P ul s turn-off energy loss per pulse iC=1,2kA,vCE=900V,vL=±15V E
off
RG=1,8Ω, tvj=125°C, LS=70nH - 290 - mWs
Inversdiode / Inverse diode
Durchlaßspannung forward voltage iF=1200A, vGE=0V, tvj=25°C v
F
- 2,4 2,8 V
iF=1200A, vGE=0V, tvj=125°C - 2,2 - V
Rückstromspitze peak reverse recovery current iF=1,2kA, -diF/dt=6kA/µs I
RM
vRM=900V, vEG=10V, tvj=25°C - 460 - A
vRM=900V, vEG=10V, tvj=125°C - 640 - A
Sperr ve rzö gerun gslad un g recovered charge iF=1,2kA, -diF/dt=6kA/µs Q
r
vRM=900V, vEG=10V, tvj=25°C - 100 - µAs
vRM=900V, vEG=10V, tvj=125°C - 220 - µAs
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand thermal resistance, junction to case Tr a ns is t or / tr a ns i st or , D C R
Diode /diode, DC 0,04 °C/W
Übergangs-Wärmewiderstand thermal resistance, case to heatsink pro Module / per Module R
Höchstzul. Sperrschichttemperatur max. junction temperature t
Betri ebste mp eratur operating temperature t
Lagertemperatur st ora ge te mp eratur e t
thJC
thCK
vj max
c o p
stg
Mechanische Eigenschaften / Mechanical properties
Innere Isolation inter nal insul ation Al2O
Anzug sdr eh mom en t f . mech. Be fe stigu ng / m ou nti ng torque terminals M6 / tolerance ±10% M1 3 Nm
Anzug sdr eh mom en t f . ele kt r. Ansch lü ss e / t erm inal co nne cti on to rq ue terminals M4 / tolerance +5/-10% M2 2 Nm
terminals M8 8...10 Nm
Ge wi ch t weight G ca. 1500 g
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert. Sie gilt in Verbindung mit den
zugehörigen Technischen Erläuterungen. This technical information specifies semiconductor devices but promises no characteristics. It is valid
in
combination with the belonging technical notes.
Bedingung für den Kurzschlußschutz / Conditions for short-circuit protection
tfg = 10 µs VCC = 1000 V
vL = ±15V v
RGF = RGR = 1,8 W i
tvj = 1 2 5 ° C i
Unabhängig davon gilt bei abweichenden Bedingungen / with regard to other conditions
v
CEM
CMK 1
CMK 2
= 1400 V
» 10000 A
» 8000 A
CEM
= V
CES
- 15nH x |dic/dt|
1700 V
1200 A
2400 A
7800 W
± 20 V
1200 A
2400 A
3,4 kV
0,016 °C/W
0,008 °C/W
150 °C
-40...+125 °C
-40...+125 °C
3
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