INFINEON CFH800 User Manual
S
查询CFH800供应商
P - HEMT CFH800
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P r e l i m i n a r y D a t a s h e e t
Features
• Low noise figure and high associated gain for
high IP3 receiver stages up to 4GHz
Suitable for PCS CDMA and UMTS applications
(F = 0.50dB; Ga = 17dB @ 3V; 30mA; f=1.8GHz)
• Low cost miniature package SOT343
• LG = 0.4µm; WG = 800µm
• Tape and Reel packaging
Pin assignment:
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
1 = gate
2 = source
3 = drain
4 = source
Type Marking Ordering code
(taped)
Package 1)
CFH 800 N8s on request SOT343
Maximum ratings Symbol Unit
Drain-source voltage V
Drain-gate voltage V
Gate-source voltage V
Drain current I
Channel temperature T
Storage temperature range T
Total power dissipation (T
< tbd°C)
2)
P
Thermal resistance
DS
DG
GS
D
Ch
stg
tot
5.5 V
6.5 V
-2.0 V
160 mA
150 °C
-65...+150 °C
350 mW
Channel-soldering point source R
1) Dimensions see page 7
2) TS: Temperature measured at soldering point
Infineon Technologies pg. 1/7 01.03.2002
thChS
198 K/W
WS GS CE GaAs
P - HEMT CFH800
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Electrical characteristics at TA = 25°C
unless otherwise specified
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 3 V VGS = 0 V
Pinch-off voltage
VDS = 3 V ID = 1 mA
Gate leakage current
VDS = 3 V ID = 30 mA
Transconductance
VDS = 3 V ID = 30 mA
I
DSS
V
GS(P)
I
g
G
m
0 80 140 mA
-0.7 -0.25 0.0 V
- - 10 µA
140 200 - mS
Noise figure*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 30 mA f = 1.8 GHz
F - 0.56
0.50
-
dB
1
Associated gain*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 30 mA f = 1.8 GHz
G
a
-
16
15
17
- dB
IIP3*
VDS = 3 V ID = 10 mA f = 1.8 GHz
VDS = 3 V ID = 30 mA f = 1.8 GHz
* Parameters are measured for input impedance for minimum noise figure and output impedance for
maximum gain.
IIP3 - 8.5
13
- dBm
Infineon Technologies pg. 2/7 01.03.2002
WS GS CE GaAs
P - HEMT CFH800
________________________________________________________________________________________________________
Typical Common Source S – Parameters
@ 3V; 10mA; Zo = 50Ω
f[GHz] S11 Mag S11 Ang S21 Mag S21 Ang S12 Mag S12 Ang S22 Mag S22 Ang
0.1 0.9625 -14.2 11.1164 168.7 0.0338 73.6 0.6449 -15.7
0.2 0.9396 -22 10.9663 163.1 0.0385 72.1 0.6334 -22.4
0.3 0.9166 -33.4 10.6984 155 0.0481 68.9 0.6178 -32.7
0.4 0.8861 -44.6 10.2628 146.9 0.0607 64.2 0.594 -42.2
0.5 0.8513 -54.8 9.74 139.7 0.0725 59.8 0.5711 -51.3
0.6 0.8163 -64.6 9.2192 132.8 0.0825 55.8 0.5428 -59.5
0.7 0.7865 -73.6 8.7366 126.7 0.092 52.8 0.5211 -67.5
0.8 0.7582 -82.5 8.2519 121.1 0.0982 50.2 0.494 -75
0.9 0.7312 -90.6 7.7566 116 0.1035 48.2 0.472 -81.9
1 0.708 -98.4 7.3039 111.1 0.1072 45.4 0.4472 -88.7
1.1 0.6843 -105.7 6.8673 106.4 0.1117 43.5 0.4253 -94.7
1.2 0.6665 -112.8 6.4912 102.1 0.1159 41.1 0.3995 -100.6
1.3 0.6535 -119.1 6.1071 98.1 0.1194 39.9 0.379 -106.3
1.4 0.6451 -125.2 5.7901 94.3 0.1225 38.7 0.3581 -112.7
1.5 0.6368 -130.7 5.4939 90.6 0.1245 37.7 0.3445 -118.4
1.6 0.6299 -136.3 5.2283 87.1 0.1262 36.6 0.3277 -124.5
1.7 0.6246 -141.4 4.9491 83.9 0.1274 35.6 0.3156 -130.7
1.8 0.6208 -146.4 4.7146 80.8 0.1286 35 0.3044 -138
1.9 0.6164 -151.1 4.4907 77.5 0.1302 34.4 0.3001 -144.8
2 0.6147 -155.6 4.2842 74.7 0.1314 34 0.2953 -151.5
2.1 0.6145 -160 4.081 72.1 0.1324 33.3 0.2966 -157.7
2.2 0.6151 -163.8 3.9114 69.3 0.1328 32.9 0.2982 -163.8
2.3 0.6162 -167.7 3.7677 66.3 0.1342 32.6 0.3056 -169.5
2.4 0.6171 -171.1 3.6238 63.5 0.1345 32.5 0.3107 -174.2
2.5 0.6184 -174.8 3.4535 61.1 0.1361 32 0.3205 -178.8
3 0.6168 171.5 2.8397 50.5 0.1374 31.8 0.3641 166.2
3.5 0.612 160.2 2.4102 40.2 0.1387 34 0.3952 158.3
4 0.6154 150.8 2.1095 32.1 0.1422 37.4 0.4028 154.3
4.5 0.6081 142.7 1.9033 23.7 0.1523 40.5 0.3976 150.6
5 0.6042 134.8 1.7615 15 0.1667 41.9 0.3967 145.2
5.5 0.6158 127 1.6573 5.5 0.1839 41 0.3972 137.2
6 0.6341 118.7 1.5577 -5 0.1931 38 0.4 123
Typical Common Source Noise – Parameters
@ 3V; 10mA; Zo = 50Ω
f[GHz] F
0.9 0.41 18.7 0.33 23 0.14
1.8 0.56 15.6 0.37 98 0.10
2.4 0.61 13.5 0.37 136 0.10
3.0 0.69 11.4 0.38 170 0.06
Infineon Technologies pg. 3/7 01.03.2002
[dB] Ga [dB]
min
Mag (Γopt ) Phase(Γopt) [deg]
Rn/50
WS GS CE GaAs
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