Page 1
GaAs FET CF 739
Features
● N-channel dual-gate GaAs MES FET
● Depletion mode transistor for tuned small-signal
applications up to 2 GHz, e. g. VHF, UHF,
Sat-TV tuners
● Low noise
● High gain
● Low input capacitance
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Ordering Code
CF 739 Q62702-F1215MS SOT-143
Marking
(tape and reel)
Pin Configuration
1 2 3
S D G24G1
Package
Maximum Ratings
Parameter Symbol Values Unit
Drain-source voltage V
DS 10 V
Gate 1-source voltage – VG1S 6
Gate 2-source voltage – V
G2S 6
Drain current ID 80 mA
Gate 1-source peak current + IG1SM 1
Gate 2-source peak current + IG2SM 1
Total power dissipation, T
S ≤ 66 ˚C
2)
Ptot 240 mW
Channel temperature Tch 150 ˚C
Storage temperature range T
stg – 55 … + 150
1)
Thermal Resistance
Channel - soldering point
1)
For detailed information see chapter Package Outlines.
2)
Package mounted on alumina 15 mm × 16.7 mm × 0.7 mm.
3)
TS is measured on the source lead at the soldering point to the pcb.
3)
Semiconductor Group 1
RthchS ≤ 350 K/W
04.96
Page 2
Electrical Characteristics
I
A = 25 ˚C, unless otherwise specified.
at T
DC Characteristics
D = 100 µA, – VG1S = – VG2S = 4 V
min. typ. max.
V
(BR)DS 10 – –
CF 739
UnitValuesParameter Symbol
VDrain-source breakdown voltage
– I
G1SS ––20
G1S = 5 V, VG2S = VDS = 0
– V
Gate 2 leakage current
G2S = 5 V, VG1S = VDS = 0
– V
G1S = 0, VG2S = 0, VDS = 3 V
V
VG2S = 0, VDS = 5 V, ID = 200 µA
Gate 2-source pinch-off voltage
– I
G2SS ––20
I
DSS 6–60
– V
G1S(P) – – 2.5
– V
G2S(P) – – 2.5
µAGate 1 leakage current
mADrain current
VGate 1-source pinch-off voltage
VG1S = 0, VDS = 5 V, ID = 200 µA
AC Characteristics
DS = 5 V, VG2S = 2 V, ID = 10 mA, f = 1 kHz
V
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz
V
Output capacitance
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1 MHz
V
g
fs –25–
C
gfss – 0.95 –
C
dss – 0.5 –
mSForward transconductance
pFGate 1 input capacitance
VG2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz
V
Power gain
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 1.75 GHz
V
G2S = 2 V, VDS = 5 V, ID = 10 mA, f = 800 MHz
V
Control range
G2S = 2 V … – 3 V
V
Semiconductor Group 2
F
–
–
ps
G
–
–
∆ Gpsc –50–
1.8
1.1
17
22
–
–
–
–
dBNoise figure
Page 3
CF 739
Total power dissipation Ptot = f (TA*; TS)
*Package mounted on alumina
Output characteristics ID = f (VDS)
G2S = 2 V
V
Gate 1 forward transconductance
fs1 = f (VG1S)
g
DS = 5 V, f = 1 kHz
V
Gate 1 forward transconductance
fs1 = f (VG2S)
g
DS = 5 V, f = 1 kHz
V
Semiconductor Group 3
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CF 739
Drain current ID = f (VG1S)
DS = 5 V
V
Drain current ID = f (VG2S)
DS = 5 V
V
Gate 1 input transconductance
g1ss = f (ID)
C
G2S = 2 V, VDS = 5 V, f = 0.1 – 1 GHz
V
Output capacitance C
G2S = 2 V, ID = 10 mA, f = 0.1 – 1 GHz
V
dss = f (VDS)
Semiconductor Group 4
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Common Source Admittance Parameters, G2 RF grounded
CF 739
Gate 1 input admittance y11s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Gate 1 forward transfer admittance y21s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Output admittance y
22s
VDS = 5 V, VG2S = 2 V, ID = 10 mA
Semiconductor Group 5
Page 6
Common Source S-Parameters, G2 RF grounded
CF 739
fS
11 S21 S12 S22
GHz MAG ANG MAG ANG MAG ANG MAG ANG
VDS = 5 V, VG2S = 2 V, ID = 10 mA, Z0 = 50 Ω
0.06
0.08
0.10
0.15
0.20
0.25
0.30
0.40
0.50
0.60
0.70
0.80
0.90
1.00
1.20
1.40
1.50
1.60
1.80
2.00
2.20
2.40
2.50
2.60
2.80
3.00
0.999
0.998
0.998
0.997
0.993
0.989
0.987
0.975
0.965
0.951
0.935
0.918
0.900
0.877
0.883
0.773
0.744
0.720
0.666
0.614
0.556
0.497
0.466
0.449
0.408
0.375
– 2.4
– 3.2
– 4.1
– 6.0
– 8.0
– 10.1
– 12.1
– 16.0
– 19.9
– 23.8
– 27.5
– 31.4
– 35.2
– 39.0
– 46.6
– 53.7
– 56.8
– 60.1
– 66.2
– 72.8
– 80.3
– 87.2
– 90.2
– 92.8
– 97.1
– 101.7
3.21
3.21
3.21
3.22
3.22
3.21
3.21
3.18
3.15
3.12
3.09
3.05
3.03
3.02
2.96
2.85
2.77
2.74
2.64
2.59
2.53
2.45
2.38
2.34
2.24
2.17
176.9
175.5
174.3
171.4
168.4
165.5
162.5
156.6
150.7
145.0
139.3
134.0
128.5
122.9
111.4
99.7
94.4
89.2
78.9
68.6
57.4
45.6
40.0
34.5
23.6
12.2
0.001
0.001
0.001
0.002
0.002
0.003
0.003
0.004
0.005
0.006
0.007
0.008
0.009
0.009
0.010
0.011
0.012
0.012
0.012
0.012
0.012
0.010
0.009
0.008
0.005
0.002
81.8
85.8
90.8
84.2
88.1
84.4
83.3
79.6
78.6
78.0
76.6
73.3
70.4
69.5
66.4
59.9
59.9
57.5
54.1
49.2
43.7
39.4
35.2
32.2
25.1
– 25.0
0.963
0.963
0.962
0.962
0.962
0.962
0.962
0.961
0.960
0.960
0.961
0.958
0.956
0.955
0.953
0.949
0.949
0.949
0.948
0.945
0.941
0.937
0.936
0.936
0.937
0.934
– 1.0
– 1.4
– 1.7
– 2.5
– 3.4
– 4.3
– 5.2
– 6.8
– 8.5
– 10.3
– 12.0
– 13.7
– 15.4
– 17.0
– 20.6
– 24.3
– 26.2
– 27.9
– 31.5
– 35.3
– 39.4
– 44.4
– 47.0
– 49.6
– 54.6
– 59.1
Semiconductor Group 6
Page 7
S11, S22 = f (f), Z-plane
DS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 Ω
V
CF 739
12, S21 = f (f)
S
DS = 5 V,VG2S = 2 V,ID = 10 mA,Z0 = 50 Ω
V
Semiconductor Group 7
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