Page 1
GaAs FET CFY 30
________________________________________________________________________________________________________
D a t a s h e e t
* Low noise ( F
= 1.4 dB @ 4 GHz )
*High gain ( 11.5 dB typ. @ 4 GHz )
*For oscillators up to 12 GHz
*For amplifiers up to 6 GHz
*Ion implanted planar structure
* Chip all gold metallization
* Chip nitride passivation
ESD: Electrostatic discharge sensitive device,
observe handling precautions!
Type Marking Ordering code
(tape and reel)
Pin Configuration
1 2 3 4
Package 1)
CFY 30 A2 Q62703-F97 S D S G SOT-143
Maximum ratings Symbol Value Unit
Drain-source voltage
Drain-gate voltage
Gate-source voltage
Drain current
Channel temperature
Storage temperature range
Total power dissipation (TS < 70°C)
2)
V
V
V
T
T
P
DS
DG
GS
I
D
Ch
stg
tot
-4 ... +0.5 V
80 mA
150 °C
-40...+150 °C
250 mW
Thermal resistance
Channel-soldering point
1) Dimensions see chapter Package Outlines
2) TS is measured on the source 1 lead at the soldering point to the PCB.
2)
R
thChS
<320 K/W
5V
7V
Siemens Aktiengesellschaft pg. 1/6 11.01.1996
HL EH PD 21
Page 2
GaAs FET CFY 30
________________________________________________________________________________________________________
Electrical characteristics at
T
= 25°C, unless otherwise specified
A
Characteristics Symbol min typ max Unit
Drain-source saturation current
VDS = 3.5 V, VGS = 0 V
Pinch-off voltage
VDS = 3.5 V ID = 1 mA
Transconductance
VDS = 3.5 V I
= 15 mA
D
Gate leakage current
VDS = 3.5 V ID = 15 mA
Noise figure
V
= 3.5 V I
f = 6 GHz
= 15 mA f = 4 GHz
V
I
mA
20 50 80
V
-0.5 -1.3 -4.0
g
mS
20 30 -
I
µA
- 0.1 2
F
-
-
1.4
2.0
1.6
-
dB
Associated gain
V
= 3.5 V I
f = 6 GHz
= 15 mA f = 4 GHz
Maximum available gain
VDS = 3.5 V ID = 15 mA f = 6 GHz
Maximum stable gain
VDS = 3.5 V ID = 15 mA f = 4 GHz
Power output at 1 dB compression
VDS = 4 V ID = 30 mA f = 6 GHz
G
MAG
MSG
P
10
-
11.5
8.9
-
-
- 11.2 -
- 14.4 -
-16-
dB
dB
dB
dBm
Siemens Aktiengesellschaft pg. 2/6 11.01.1996
HL EH PD 21
Page 3
GaAs FET CFY 30
________________________________________________________________________________________________________
Typical Common Source Noise Parameters
ID = 15 mA VDS = 3.5 V Z0 = 50 Ω
fF
min
GHz dB dB MAG ANG
G
a
Γ
opt
R
Ω
NF
n
50Ω
-dB dB
G(F
2 1.0 15.5 0.72 27 49 0.17 2.9 10.0
4 1.4 11.5 0.64 61 29 0.17 2.7 9.3
6 2.0 8.9 0.46 101 19 0.30 2.8 7.5
8 2.5 7.1 0.31 153 9 0.31 2.8 6.4
10 3.0 5.8 0.34 -133 14 0.38 3.4 4.2
12 3.5 5.0 0.41 -93 28 0.42 4.1 2.9
Total Power Dissipation P
300
P
[ m W ]
tot
= f (TS;TA)
tot
Ω)
200
100
0
0 50 100 150
Siemens Aktiengesellschaft pg. 3/6 11.01.1996
T
S
T
A
TT;[ °C ]
AS
HL EH PD 21
Page 4
GaAs FET CFY 30
________________________________________________________________________________________________________
Output characteristics ID = f (VDS)
50
=0V
V
GS
ID [mA]
40
30
20
10
V
=-0.2V
GS
=-0.4VV
GS
=-0.6VV
GS
=-0.8V
V
GS
=-1.0VV
GS
=-1.2VV
GS
=-1.4VV
GS
0
0
12345
VDS [V]
Siemens Aktiengesellschaft pg. 4/6 11.01.1996
HL EH PD 21
Page 5
GaAs FET CFY 30
________________________________________________________________________________________________________
Typical Common Source S-Parameters
ID = 15 mA UD = 3.5 V Z0 = 50 Ω
f S11 S21 S12 S22
GHz Mag Ang Mag Ang Mag Ang Mag An g
0.1 1.00 -1 2.43 178 0.003 87 0.70 -1
0.4 1.00 -6 2.43 171 0.010 23 0.69 -5
0.8 0.99 -14 2.43 162 0.020 78 0.68 -11
1.2 0.98 -21 2.43 154 0.030 72 0.67 -15
1.6 0.97 -28 2.44 145 0.040 66 0.66 -20
2.0 0.96 -36 2.45 137 0.050 60 0.65 -26
2.4 0.93 -44 2.47 129 0.058 55 0.64 -30
2.8 0.90 -53 2.49 120 0.066 50 0.62 -35
3.2 0.87 -62 2.50 111 0.074 45 0.60 -41
3.6 0.83 -72 2.50 102 0.082 39 0.57 -47
4.0 0.80 -82 2.50 93 0.090 32 0.54 -54
4.4 0.77 -92 2.51 83 0.097 25 0.50 -61
4.8 0.74 -104 2.49 73 0.103 1 8 0.46 -67
5.2 0.70 -115 2.45 64 0.108 1 2 0.43 -73
5.6 0.66 -127 2.41 54 0.112 6 0.40 -80
6.0 0.63 -139 2.36 45 0.114 0 0.36 -88
6.4 0.60 -150 2.30 37 0.115 -6 0.31 -98
6.8 0.57 -162 2.24 27 0.116 -11 0.27 -110
7.2 0.55 -174 2.19 17 0.116 -17 0.24 -122
7.6 0.54 172 2.14 8 0.116 -22 0.21 -137
8.0 0.53 160 2.08 -2 0.115 -27 0.19 -154
8.4 0.54 147 2.00 -11 0.113 -32 0.18 -173
8.8 0.55 135 1.92 -21 0.111 -37 0.18 171
9.2 0.56 124 1.83 -30 0.109 -42 0.19 155
9.6 0.57 114 1.72 -40 0.107 -46 0.21 141
10.0 0.58 106 1.61 -48 0.104 -50 0.23 128
10.4 0.59 98 1.51 -56 0.102 -53 0.26 118
10.8 0.60 91 1.42 -62 0.101 -56 0.29 108
11.2 0.61 85 1.35 -69 0.099 -58 0.32 100
11.6 0.62 79 1.30 -75 0.098 -60 0.34 93
12.0 0.62 74 1.25 -81 0.096 -63 0.36 85
Siemens Aktiengesellschaft pg. 5/6 11.01.1996
HL EH PD 21
Page 6
GaAs FET CFY 30
________________________________________________________________________________________________________
Typical Common Source S-Parameters
ID = 30 mA UD = 3.5 V Z0 = 50 Ω
f S11 S21 S12 S22
GHz Mag Ang Mag Ang Mag Ang Mag Ang
0.1 1.00 -2 3.23 178 0.002 85 0.71 -1
0.4 1.00 -8 3.21 171 0.009 79 0.70 -6
0.8 0.99 -16 3.19 162 0.017 73 0.69 -11
1.2 0.97 -24 3.18 153 0.025 70 0.67 -16
1.6 0.95 -32 3.17 143 0.034 65 0.66 -21
2.0 0.92 -40 3.17 135 0.042 61 0.65 -26
2.4 0.90 -48 3.17 127 0.051 56 0.63 -31
2.8 0.87 -58 3.17 119 0.059 50 0.61 -36
3.2 0.83 -68 3.16 109 0.067 45 0.58 -42
3.6 0.79 -79 3.12 99 0.073 40 0.55 -48
4.0 0.75 -91 3.08 88 0.079 34 0.52 -54
4.4 0.71 -102 3.04 78 0.084 28 0.50 -60
4.8 0.67 -114 3.00 68 0.089 21 0.47 -66
5.2 0.63 -126 2.95 58 0.092 15 0.43 -73
5.6 0.60 -138 2.87 49 0.094 10 0.38 -81
6.0 0.57 -150 2.77 40 0.096 4 0.34 -89
6.4 0.54 -162 2.68 31 0.097 -1 0.30 -99
6.8 0.52 -174 2.58 22 0.098 -6 0.27 -109
7.2 0.51 173 2.50 14 0.099 -11 0.24 -121
7.6 0.50 160 2.43 5 0.099 -16 0.21 -134
8.0 0.50 147 2.36 -4 0.099 -20 0.18 -148
8.4 0.51 135 2.26 -13 0.099 -24 0.16 -164
8.8 0.52 125 2.15 -22 0.099 -29 0.16 176
9.2 0.54 115 2.04 -30 0.099 -33 0.17 158
9.6 0.55 107 1.93 -39 0.099 -37 0.19 142
10.0 0.57 99 1.82 -47 0.099 -41 0.22 128
10.4 0.59 91 1.71 -54 0.100 -44 0.25 118
10.8 0.60 85 1.60 -62 0.101 -47 0.27 109
11.2 0.61 79 1.51 -69 0.102 -49 0.30 100
11.6 0.62 73 1.44 -75 0.103 -52 0.32 92
12.0 0.62 68 1.38 -82 0.104 -55 0.34 85
Siemens Aktiengesellschaft pg. 6/6 11.01.1996
HL EH PD 21
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