INFINEON BTS550P DATA SHEET

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PROFET

Smart Highside High Current Power Switch

Reversave

•

Reverse battery protection by self turn on of

power MOSFET

Features

•

Overload protection

•

Current limitation

•

Short circuit protection

•

Overtemperature protection

•

Overvoltage protection (including load dump)

•

Clamp of negative voltage at output

•

Fast deenergizing of inductive loads

•

Low ohmic inverse current operation

•

Diagnostic feedback with load current sense

•

Open load detection via current sense

•

Loss of V

•

Electrostatic discharge (ESD) protection

protection2)

bb

1)

Application

•

Power switch with current sense diagnostic

feedback for 12

•

Most suitable for loads with high inrush current

like lamps and motors; all types of resistive and
inductive loads

•

Replaces electromechanical relays, fuses and discrete circuits

V and 24 V DC grounded loads

Product Summary
Overvoltage protection V
Output clamp
Operating voltage
On-state resistance RON 3.6
Load current (ISO) I
Short circuit current limitation I
Current sense ratio I

TO-218AB/5

Straight leads

®

Data Sheet BTS550P

62 V

bb(AZ)

V

V

ON(CL)

bb(on)

L(ISO)
L(SC)
L :

5.0 ... 34 V

115 A

220 A

IIS 21000

5

1

44

V

mΩ

General Description

N channel vertical power FET with charge pump, current controlled input and diagnostic feedback with load
current sense, integrated in Smart SIPMOS

Voltage

source

Voltage

sensor

2

IN

ESD

I

IN

V

IN

V

IS

Logic GND

Logic

I

IS

IS

4

R

IS



chip on chip technology. Providing embedded protective functions.

3 & Tab

+ V

bb

OUT



1, 5

I

L

Load GND

Load

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Output

Voltage

detection

Temperature

sensor

R

bb

Current

Sense

PROFET

1

) With additional external diode.

2)

Additional external diode required for energized inductive loads (see page 9).

Infineon Technologies AG 1 of 15 2003-Oct-01

Data Sheet BTS550P

Pin Symbol Function

1 OUT O

2 IN I Input, activates the power switch in case of short to ground
3 Vbb

4 IS S

5 OUT O

Output to the load. The pins
especially in high current applications!

Positive power supply voltage, the tab is electrically connected to this pin.

+

In high current applications the tab should be used for the V
instead of this pin

Diagnostic feedback providing a sense current proportional to the load
current; zero current on failure (see Truth Table on page 7)

Output to the load. The pins
especially in high current applications!

4)

.

Maximum Ratings at Tj = 25 °C unless otherwise specified
Parameter Symbol Values Unit

Supply voltage (overvoltage protection see page 4) Vbb 40 V
Supply voltage for short circuit protection,

T

=-40 ...+150°C: (E

j,start

limitation see diagram on page 9)

AS

Load current (short circuit current, see page 5) IL self-limited A
Load dump protection V

5)

R

= 2 Ω, RL = 0.54 Ω, td = 200 ms,

I

LoadDump

= UA + Vs, UA = 13.5 V

IN, IS = open or grounded
Operating temperature range
Storage temperature range
Power dissipation (DC), TC ≤ 25 °C P
Inductive load switch-off energy dissipation, single pulse

V

bb

= 20 A, Z

I

L

= 12V, T

= 150°C, TC = 150°C const.,

j,start

15 mH, 0 Ω, see diagrams on page 10

=

L

Electrostatic discharge capability (ESD)

Human Body Model acc. MIL-STD883D, method 3015.7 and ESD
assn. std. S5.1-1993, C = 100 pF, R = 1.5 kΩ

Current through input pin (DC)
Current through current sense status pin (DC)

see internal circuit diagrams on page 8

1 and 5 must be shorted with each other

3)

connection

bb

1 and 5 must be shorted with each other

3)

Vbb 34 V

6

V

Load dump

Tj
T

stg

360 W

tot

)

-40 ...+150

-55 ...+150

80 V

EAS
V

4kV

ESD

IIN
IIS

+15 , -250
+15 , -250

3J

°C

mA

3)

Not shorting all outputs will considerably increase the on-state resistance, reduce the peak current capability
and decrease the current sense accuracy

4)

Otherwise add up to 0.5 mΩ (depending on used length of the pin) to the RON if the pin is used instead of the
tab.

5)

RI = internal resistance of the load dump test pulse generator.

6)

V

Load dump

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839.

Infineon Technologies AG 2 2003-Oct-01

Data Sheet BTS550P

Thermal Characteristics

Parameter and Conditions Symbol Values Unit

min typ max

7

)

Thermal resistance chip - case:

Junction - ambient (free air): R

R

thJC
thJA

-- -- 0.35

--

30 --

K/W

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, V

= 12 V unless otherwise specified

bb

Load Switching Capabilities and Characteristics

On-state resistance (Tab to pins 1,5, see measurement

circuit page 8)

V

I

V

IL = 20 A, Tj = 25 °C:

= 0, IL = 20 A, Tj = 150 °C:

IN

= 120 A, Tj = 150 °C: -- 6.5

L

= 6V8), IL = 20 A, Tj = 150 °C: R

bb

Nominal load current9) (Tab to pins 1,5)
ISO 10483-1/6.7: V

= 0.5 V, Tc = 85 °C

ON

10)

Maximum load current in resistive range
(Tab to pins 1,5) V

see diagram on page 12 V
Turn-on time

11)

IIN to 90% V
Turn-off time IIN to 10% V
R

= 1 Ω , T

L

Slew rate on

=-40...+150°C

j

11)

(10 to 30% V

= 1.8 V, Tc = 25 °C:

ON

= 1.8 V, Tc = 150 °C:

ON

)

OUT

OUT
OUT

:
:

RL = 1 Ω ,Tj =25°C
Slew rate off
R

= 1 Ω ,Tj =25°C

L

11)

(70 to 40% V

OUT

)

RON

min typ max

--

2.8

5.0

ON(Static)

I

L(ISO)

I

L(Max)

ton
t

off

-- 7 10

90 115 -- A

390
215

120

40

--

--

250

90

dV/dton 0.2 0.5 0.8 V/µs

-dV/dt

0.2 0.6 1 V/µs

off

3.6

6.5

600
150

--

--

mΩ

A

µs

7)

Thermal resistance R

8)

Decrease of V

long as V

9)

not subject to production test, specified by design

10)

TJ is about 105°C under these conditions.

11)

See timing diagram on page 13.

bIN

below 10 V causes a slowly a dynamic increase of RON to a higher value of R

bb

> V

bIN(u) max

case to heatsink (about 0.25 K/W with silicone paste) not included!

thCH

, RON increase is less than 10 % per second for TJ < 85 °C.

ON(Static)

. As

Infineon Technologies AG 3 2003-Oct-01

Data Sheet BTS550P

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, V

= 12 V unless otherwise specified

bb

Inverse Load Current Operation

min typ max

On-state resistance (Pins 1,5 to pin 3)
V

= 12 V, IL = - 20 A Tj = 25 °C:

bIN

R

ON(inv)

see diagram on page 10 Tj = 150 °C:
Nominal inverse load current (Pins 1,5 to Tab)
V
Drain-source diode voltage (V

I

= -0.5 V, Tc = 85 °C10

ON

L

=

-

20 A,

I

IN

= 0,

j = +150°C

T

out

)

> V

bb

I

90 115 -- A

L(inv)

-V

-- 0.6 0.7 V

ON

Operating Parameters

Operating voltage (V

IN

Undervoltage shutdown
Undervoltage start of charge pump

see diagram page 14
Overvoltage protection
I

= 15 mA Tj = 25...+150°C:

bb

Standby current Tj =-40...+25°C:
I

= 0 T

IN

8, 12)

= 0)

13)

14)

V

V

Tj =-40°C:

= 150°C:

j

5.0 -- 34 V

bb(on)

1.5 3.0 4.5 V

bIN(u)

V
V

I

bb(off)

bIN(ucp)

60

bIN(Z)

--

--

3.0

62

--

2.8

5.0

4.5 6.0 V

--

64
15

25

3.6

6.5

25
50

mΩ

--

V

-­µA

12)

If the device is turned on before a V

For the voltage range 0..34 V the device is fully protected against overtemperature and short circuit.

13)

V

= V

- V

bIN

(typ.) the charge pump is not active and V

14)

See also V

bb

see diagram on page 8. When V

IN

in circuit diagram on page 9.

ON(CL)

-decrease, the operating voltage range is extended down to V

bb

OUT

increases from less than V

bIN

≈V

- 3 V.

bb

bIN(u)

up to V

bIN(ucp)

bIN(u)

= 5 V

.

Infineon Technologies AG 4 2003-Oct-01

Data Sheet BTS550P

Parameter and Conditions Symbol Values Unit

at Tj = -40 ... +150 °C, V

bb

Protection Functions

= 12 V unless otherwise specified

)

15

min typ max

Short circuit current limit (Tab to pins 1,5)16
V

= 12 V, time until shutdown max. 350 µs T

ON

Tc =25°C:
Tc =+150°C:
Short circuit shutdown delay after input current

positive slope, V

min. value valid only if input "off-signal" time exceeds 30 µs

Output clamp

> V

ON

17)

IL= 40 mA:

ON(SC)

(inductive load switch off)
Output clamp (inductive load switch off)

at V

I

= 40 mA

L

= Vbb - V

OUT

(e.g. overvoltage)

ON(CL)

Short circuit shutdown detection voltage
(pin 3 to pins 1,5)

=-40°C:

c

I

L(SCp)

t

d(SC)

-V

OUT(CL)

V

ON(CL)

V

ON(SC)

100

110
120

190
220
210

80

14 17

40

--

-- 350 µs

44 47 V

6 -- V
Thermal overload trip temperature Tjt 150 -- -- °C
Thermal hysteresis

∆

Tjt -- 10 -- K

350
330
310

20 V

A

Reverse Battery

Reverse battery voltage
On-state resistance (Pins 1,5 to pin 3) Tj = 25 °C:
V

= -12V, V

bb

= 0, IL = - 20 A, R

IN

Integrated resistor in Vbb line Tj=25°C:
T

15

) Integrated protection functions are designed to prevent IC destruction under fault conditions described in the

data sheet. Fault conditions are considered as “outside” normal operating range. Protection functions are not
designed for continuous repetitive operation.

16

) Short circuit is a failure mode. The device is not designed to operate continuously into a short circuit by

permanent resetting the short circuit latch function. The lifetime will be reduced under such conditions.

17)

This output clamp can be "switched off" by using an additional diode at the IS-Pin (see page 8). If the diode
is used, V

18)

The reverse load current through the intrinsic drain-source diode has to be limited by the connected load (as

it is done with all polarity symmetric loads). Note that under off-conditions (I
is not activated. This results in raised power dissipation due to the higher voltage drop across the intrinsic
drain-source diode. The temperature protection is not active during reverse current operation! Increasing
reverse battery voltage capability is simply possible as described on page 9.

is clamped to Vbb- V

OUT

18)

-Vbb -- -- 32 V

= 1 kΩ Tj = 150 °C:

IS

at inductive load switch off.

ON(CL)

=150°C:

j

R

Rbb 90

ON(rev)

--

105

= I

IN

3.4

--

110
125

= 0) the power transistor

IS

4.3

7.5

135
150

mΩ

Ω

Infineon Technologies AG 5 2003-Oct-01