DS(on)
D
A
jmax
j
stg
BSS 84 P
SIPMOS Small-Signal-Transistor
Feature
·
P-Channel
·
Enhancement mode
·
Logic Level
·
Avalanche rated
·
dv/dt rated
Type
BSS84P - E6327
BSS84P - L6327
Package
PG-SOT-23
PG-SOT-23
Maximum Ratings, at
T
= 25 °C, unless otherwise specified
Ordering Code
Q67041-S1417
SP000082879
Marking
YBs
YBs
Product Summary
V
R
I
DS
PG-SOT-23
-60 V
8
-0.17 A
3
1
Gate
pin1
Source
pin 2
W
2
VPS05161
Drain
pin 3
Parameter
Continuous drain current
TA=25°C
=70°C
T
A
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=-0.17 A , VDD=-25V, RGS=25
W
Avalanche energy, periodic limited by T
Reverse diode dv/dt
IS=-0.17A, VDS=-48V, di/dt=-200A/µs, T
jmax
=150°C
Gate source voltage V
Power dissipation
TA=25°C
Operating and storage temperature
Symbol
I
D
Value Unit
A
-0.17
-0.14
I
D puls
E
AS
E
AR
-0.68
2.6 mJ
0.036
dv/dt -6 kV/µs
V
°C
P
T
GS
tot
,
±20
0.36 W
T
-55... +150
IEC climatic category; DIN IEC 68-1 55/150/56
Rev 2.3 Page 1
2005-07-21
Thermal Characteristics
BSS 84 P
Parameter
Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
- - 200 K/W
(Pin 3)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
-
-
350
300
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=-250µA
V
(BR)DSS
-60 - - V
Gate threshold voltage, VGS = V
=-20µA
I
D
Zero gate voltage drain current
VDS=-60V, VGS=0, TA=25°C
V
=-60V, VGS=0, TA=125°C
DS
Gate-source leakage current
VGS=-20V, VDS=0
Drain-source on-state resistance
VGS=-4.5V, ID=-0.14A
Drain-source on-state resistance
VGS=-10V, ID=-0.17A
DS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
R
DS(on)
-1 -1.5 -2
-
-
-0.1
-10
-1
-100
- -10 -100 nA
- 8 12
- 5.8 8
µA
W
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Rev 2.3 Page 2
2005-07-21
(plateau)
Inv. diode direct current, pulsed
SD
Electrical Characteristics, at TA = 25 °C, unless otherwise specified
BSS 84 P
Parameter
Symbol Conditions Values Unit
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
d(on)
r
d(off)
f
gs
gd
g
min. typ. max.
V
£
2*ID*R
DS
I
=-0.14A
D
VGS=0, VDS=-25V,
f=1MHz
DS(on)max
,
0.065 0.13 - S
- 15 19 pF
- 6 8
- 2 3
VDD=-30V, VGS=-4.5V,
I
=-0.14A, RG=25
D
W
- 6.7 10 ns
- 16.2 24.3
- 8.6 12.9
- 20.5 30.8
VDD=-48V, ID=-0.17A - 0.25 0.37 nC
- 0.3 0.45
VDD=-48V, ID=-0.17A,
V
=0 to -10V
GS
- 1 1.5
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
I
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
rr
rr
VDD=-48V, ID=-0.17A - -3.42 - V
TA=25°C - - -0.17 A
- - -0.68
VGS=0, IF=-0.17A - -0.93 -1.24 V
VR=-30V, I
di
/dt=100A/µs
F
F=lS
,
- 23 34 ns
- 10 15 nC
Rev 2.3 Page 3
2005-07-21
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