INFINEON BSS138N User Manual

BSS138N

SIPMOS® Small-Signal-Transistor

Features

• N-channel

• Enhancement mode

Product Summary

V

DS

R

DS(on),max

I

D

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

PG-SOT-23

Type Package Ordering Code Tape and Reel Information Marking

BSS138N PG-SOT-23 Q67042-S4184 E6327: 3000 pcs/reel SKs

60 V

3.5

0.23 A

Ω

BSS138N PG-SOT-23 Q67045-A5069 L6327: 3000 pcs/reel SKs

BSS138N PG-SOT-23 Q67042-S4190 E6433: 10000 pcs/reel SKs

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Reverse diode dv /dt dv /dt

Gate source voltage

ESD sensitivity (HBM) as per
MIL-STD 883

Power dissipation

=25 °C, unless otherwise specified

j

I

D

I

D,pulse

TA=25 °C

T

=70 °C

A

TA=25 °C

=0.23 A, VDS=48 V,

I

D

di /dt =200 A/µs,

T

=150 °C

j,max

V

GS

P

tot

TA=25 °C

Value

0.23 A

0.18

0.92

6 kV/µs

±20 V

Class 0

0.36 W

T

Operating and storage temperature

, T

j

stg

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 2.5 page 1 2006-05-17

BSS138N

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - minimal footprint

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

- - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source leakage current

V

(BR)DSSVGS

V

GS(th)

I

D (off)

= 0 V, ID=250 µA

VGS=VDS, ID=26 µA

VDS=60 V,
V

=0 V, Tj=25 °C

GS

60 - - V

0.6 1.0 1.4

- - 0.1 µA

Gate-source leakage current

Drain-source on-state resistance

Transconductance

I

R

g

GSS

DS(on)

fs

V

=60 V,

DS

V

=0 V, Tj=150 °C

GS

VGS=20 V, VDS=0 V

VGS=4.5 V, ID=0.03 A

V

=4.5 V, ID=0.19 A

GS

V

=10 V, ID=0.23 A

GS

|VDS|>2|ID|R

I

=0.18 A

D

DS(on)max

--5

- 1 10 nA

- 3.3 4.0

- 3.5 6.0

- 2.2 3.5

,

0.1 0.2 - S

Ω

Rev. 2.5 page 2 2006-05-17

BSS138N

y

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

V

=0 V, VDS=25 V,

GS

f =1 MHz

V

=30 V, VGS=10 V,

DD

I

=0.23 A, R

D

=6 Ω

G

-3241pF

- 7.2 9.5

- 2.8 3.8

- 2.3 3.5 ns

- 3.0 4.5

- 6.7 10

- 8.2 12.3

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=48 V, ID=0.23 A,

DD

V

=0 to 10 V

GS

- 0.10 0.14 nC

- 0.3 0.4

- 1.0 1.4

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

rr

=25 °C

T

A

VGS=0 V, IF=0.23 A,
T

=25 °C

j

=30 V, IF=0.23 A,

V

R

di

/dt =100 A/µs

F

- 3.3 - V

- - 0.23 A

- - 0.92

- 0.83 1.2 V

- 9.1 14.5 ns

- 3.3 5 nC

Rev. 2.5 page 3 2006-05-17