INFINEON BSS131 User Manual

Type

BSS131

SIPMOS® Small-Signal-Transistor

Feature

• N-Channel

• Enhancement mode

Product Summary

V

DS

R

DS(on),max

I

D

• Logic level

• dv /dt rated

• Pb-free lead-plating; RoHS compliant

PG-SOT-23

Type Package Ordering Code Tape and Reel Information Marking

240 V

14

0.1 A

Ω

BSS131 PG-SOT23 Q62702-S565 E6327 SRs

BSS131 PG-SOT23 Q67000-S229 E6433 SRs

Maximum ratings, at T

Parameter Symbol Conditions Unit

Continuous drain current

Pulsed drain current

Reverse diode dv /dt dv /dt

Gate source voltage

ESD sensitivity (HBM) as per
MIL-STD 883

=25 °C, unless otherwise specified

j

I

D

I

D,pulse

TA=25 °C

T

=70 °C

A

TA=25 °C

=0.1 A, VDS=192 V,

I

D

di /dt =200 A/µs,

T

=150 °C

j,max

V

GS

Value

0.11 A

0.09

0.4

6 kV/µs

±20 V

Class 1a

Power dissipation

Operating and storage temperature

P

tot

T

, T

j

stg

TA=25 °C

0.36 W

-55 ... 150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

Rev. 2.1 page 1 2005-02-24

BSS131

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - minimal footprint

Electrical characteristics, at T

R

thJA

=25 °C, unless otherwise specified

j

- - 350 K/W

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Drain-source leakage current

V

(BR)DSSVGS

V

GS(th)

I

D (off)

=0 V, ID=250 µA

VDS=0 V, ID=56 µA

VDS=240 V, VGS=0 V,
T

=25 °C

j

V

=240 V, VGS=0 V,

DS

T

=150 °C

j

240 - - V

0.8 1.4 1.8

- - 0.01 µA

--5

Gate-source leakage current

Drain-source on-state resistance

Transconductance

I

R

g

GSS

DS(on)

fs

VGS=20 V, VDS=0 V

VGS=4.5 V, ID=0.09 A

V

=10 V, ID=0.1 A

GS

|VDS|>2|ID|R

I

=0.08 A

D

DS(on)max

- - 10 nA

- 9.07 20

- 7.7 14

,

0.06 0.13 - S

Ω

Rev. 2.1 page 2 2005-02-24

BSS131

y

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

C

C

C

t

t

t

t

iss

oss

rss

d(on)

r

d(off)

f

V

=0 V, VDS=25 V,

GS

f =1 MHz

V

=120 V,

DD

V

=10 V, ID=0.1 A,

GS

R

=6 Ω

G

-5877pF

- 7.3 10

- 2.8 4.2

- 3.3 5.0 ns

- 3.1 4.6

- 13.7 20

- 64.5 97

Gate Charge Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

Q

gs

Q

gd

Q

g

V

=192 V, ID=0.1 A,

DD

V

=0 to 10 V

GS

- 0.16 0.22 nC

- 0.8 1.2

- 2.1 3.1

Gate plateau voltage

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

V

plateau

I

S

I

S,pulse

V

SD

t

rr

Q

rr

=25 °C

T

A

VGS=0 V, IF=0.1 A,
T

=25 °C

j

=120 V, IF=0.1 A,

V

R

di

/dt =100 A/µs

F

- 2.90 - V

- - 0.11 A

- - 0.43

- 0.81 1.2 V

- 42.9 64.3 ns

- 22.6 34 nC

Rev. 2.1 page 3 2005-02-24