INFINEON BSS123 User Manual

Rev. 1.2

DS

DS(on)

D

j

GS

j

stg

BSS123

SIPMOS Small-Signal-Transistor

Feature

• N-Channel

• Enhancement mode

• Logic Level

• dv/dt rated

Gate
pin1

Type

BSS123

Package

PG-SOT23

Ordering Code

Q62702-S512

BSS123 PG-SOT23 Q67000-S245

BSS123 PG-SOT23

SP000084574

Tape and Reel Information

E6327: 3000 pcs/reel

E6433: 10000 pcs/reel
L6327: 3000 pcs/reel

Product Summary

V

R
I

Drain
pin 3

Source
pin 2

100 V

6 Ω

0.17 A

PG-SOT23

3

1

VPS05161

Marking

SAs
SAs

SAs

2

Maximum Ratings, at
Parameter

Continuous drain current

TA=25°C
T

=70°C

A

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=0.17A, VDS=80V, di/dt=200A/µs, T

Gate source voltage V

T

= 25 °C, unless otherwise specified

Symbol Value Unit

I

D

I

D puls

dv/dt

=150°C

jmax

0.17

0.14

0.68

6 kV/µs

±20

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1a

Power dissipation

TA=25°C

Operating and storage temperature T
IEC climatic category; DIN IEC 68-1

P

tot

,

T

0.36 W

-55... +150
55/150/56

A

V

°C

Page 1

2005-07-21

Rev. 1.2

j

BSS123

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - ambient

R

thJA

- - 350 K/W

at minimum footprint

Electrical Characteristics, at

T

= 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage,

I

=50µA

D

V

GS

=

V

Zero gate voltage drain current

VDS=100V, VGS=0, Tj=25°C
V

=100V, VGS=0, Tj=150°C

DS

Gate-source leakage current

VGS=20V, VDS=0

DS

V

(BR)DSS

V

GS(th)

I

DSS

I

GSS

100 - - V

0.8 1.4 1.8

-

-

-

-

0.01
5

- - 10 nA

µA

Drain-source on-state resistance

VGS=4.5V, ID=0.13A

Drain-source on-state resistance

VGS=10V, ID=0.17A

Page 2

R

DS(on)

R

DS(on)

- 4 10

- 3 6

2005-07-21

Ω

Rev. 1.2

j

iss

oss

rss

d(on)

r

d(off)

f

gs

gd

(plateau)

Inv. diode direct current, pulsed

SM

SD

rr

rr

BSS123

Electrical Characteristics, at

T

= 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

fs

VDS≥2*ID*R
I

=0.14A

D

VGS=0, VDS=25V,
f=1MHz

VDD=50V, VGS=10V,
I

=0.17A, RG=6Ω

D

DS(on)max

,

0.09 0.19 - S

- 55 69 pF

- 8.5 10.6

- 5 6.3

- 2.7 4 ns

- 3.1 4.6

- 9.9 14.8

- 25 37

Gate Charge Characteristics

Gate to source charge Q

VDD=80V, ID=0.17A

- 0.055 0.082 nC

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current

I

Inverse diode forward voltage V

Reverse recovery time t
Reverse recovery charge Q

- 0.77 1.15

g

S

VDD=80V, ID=0.17A,
V

=0 to 10V

GS

VDD=80V, ID = 0.17 A

TA=25°C

- 1.78 2.67

- 2.6 - V

- - 0.17 A

- - 0.68

VGS=0, IF = I
VR=50V, I

di

/dt=100A/µs

F

=

F

S

lS,

- 0.81 1.2 V

- 27.6 41.1 ns

- 10.5 15.7 nC

Page 3

2005-07-21