INFINEON BSP89 User Manual

Rev. 1.21

)

j

g

BSP89

SIPMOSÒ Small-Signal-Transistor

Feature

· N-Channel

· Enhancement mode

· Logic Level

· dv/dt rated

Pb-free lead plating; RoHS compliant

•

Type

BSP89

BSP89

Package

P-SOT-223

PG-SOT-223

Tape and Reel Information

E6327: 1000 pcs/reel

L6327: 1000 pcs/reel

Marking

BSP89

BSP89

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Product Summary

V

DS

R

DS(on

I

D

240 V

6 W

0.35 A

PG-SOT-223

4

1

3

2

VPS05163

Parameter

Continuous drain current

TA=25°C

T

=70°C

A

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=0.35A, VDS=192V, di/dt=200A/µs, T

jmax

=150°C

Gate source voltage V

Symbol Value Unit

I

D

0.35

0.28

I

D puls

dv/dt

GS

1.4

6 kV/µs

±20

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1

Power dissipation

TA=25°C

Operating and storage temperature T

P

tot

,

T

st

1.8 W

-55... +150

IEC climatic category; DIN IEC 68-1 55/150/56

A

V

°C

Page 1

2006-09-27

Rev. 1.21

BSP89

Thermal Characteristics

Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- - 25 K/W

(Pin 4)

SMD version, device on PCB:

@ min. footprint

@ 6 cm

2

cooling area

1)

R

thJA

-

-

-

-

115

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = V

I

=108µA

D

Zero gate voltage drain current

VDS=240V, VGS=0, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

240 - - V

0.8 1.4 1.8

-

-

0.1

µA

V

=240V, VGS=0, Tj=150°C

DS

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=4.5V, ID=0.32A

Drain-source on-state resistance

VGS=10V, ID=0.35A

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

Page 2

I

GSS

R

DS(on)

R

DS(on)

-

-

10

- - 10 nA

- 4.9 7.5

- 4.2 6

2006-09-27

W

Rev. 1.21

)

)

f

g

g

(p

)

BSP89

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C

Output capacitance C

Reverse transfer capacitance C

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Gate Charge Characteristics

Gate to source charge Q

Gate to drain charge Q

Gate charge total Q

Gate plateau voltage V

fs

iss

oss

rss

d(on

r

d(off

g

s

d

lateau

VDS³2*ID*R

I

=0.28A

D

VGS=0, VDS=25V,

f=1MHz

DS(on)max

,

0.18 0.36 - S

- 80 140 pF

- 11.2 16.8

- 5.2 7.8

VDD=120V, VGS=10V,

I

=0.35A, RG=6W

D

- 4 6 ns

- 3.5 5.3

- 15.9 23.8

- 18.4 27.6

VDD=192V, ID=0.35A - 0.2 0.3 nC

- 2 3

VDD=192V, ID=0.35A,

V

=0 to 10V

GS

VDD=192V, ID = 0.35 A - 3.1 - V

- 4.3 6.4

Reverse Diode

Inverse diode continuous

I

forward current

Inv. diode direct current, pulsedI

Inverse diode forward voltage V

Reverse recovery time t

Reverse recovery charge Q

S

SM

SD

rr

rr

TA=25°C - - 0.35 A

- - 1.4

VGS=0, IF = I

VR=120V, I

di

/dt=100A/µs

F

Page 3

F

S

=

lS,

- 0.85 1.2 V

- 67 100 ns

- 123 184 nC

2006-09-27