Smart Lowside Power Switch
)
)
A
HITFET
Ò
II.Generation BSP 78
Features
· Logic Level Input
· Input Protection (ESD)
· Thermal shutdown with
auto restart
Product Summary
Drain source voltage V
On-state resistance R
Nominal load current I
Clamping energy E
· Overload protection
· Short circuit protection
· Overvoltage protection
· Current limitation
· Analog driving possible
Application
· All kinds of resistive, inductive and capacitive loads in switching
or linear applications
· µC compatible power switch for 12 V DC applications
· Replaces electromechanical relays and discrete circuits
General Description
DS
DS(on
D(Nom
S
4
42 V
50 mW
3 A
500 mJ
2
1
VPS05163
3
N channel vertical power FET in Smart SIPMOSÒ technology. Fully protected by embedded
protection functions.
Vbb
M
Drain
Pin 2 and 4 (TAB)
Pin 3
Source
Pin 1
HITFET
In
ESD
â
Gate-Driving
Unit
Overload
Protection
Current
Limitation
Overtemperature
Protection
OvervoltageProtection
Short circuit
Protection
Complete product spectrum and additional information http://www.infineon.com/hitfet
Page 1
2004-03-05
BSP 78
)
j
g
A
Maximum Ratings at Tj = 25°C, unless otherwise specified
Parameter Symbol Value Unit
Drain source voltage V
Supply voltage for full short circuit protection V
Continuous input voltage
1)
Continuous input current2)
-0.2V £ VIN £ 10V
VIN < -0.2V or VIN > 10V
Operating temperature T
Storage temperature T
Power dissipation 5)
TC = 85 °C
Unclamped single pulse inductive energy
Load dump protection V
LoadDump
2)3)
2)
= VA + VS
VIN = 0 and 10 V, td = 400 ms, RI = 2 W,
RL = 4.5 W, VA = 13.5 V
Electrostatic discharge voltage
2)
(Human Body Model)
according to Jedec norm
DS
bb(SC
V
IN
I
IN
st
P
tot
E
V
LD
V
ESD
42 V
42
-0.22) ... +10
mA
self limited
| IIN | £ 2
-40 ...+150
°C
-55 ... +150
3.8 W
S
500
mJ
53.5 V
2 kV
EIA/JESD22-A114-B, Section 4
Jedec humidity category,J-STD-20-B
IEC climatic category; DIN EN 60068-1
Thermal resistance
junction - ambient:
R
@ min. footprint
@ 6 cm2 cooling area
4)
junction-soldering point: R
1
For input voltages beyond these limits I
2
not subject to production test,
3
V
Loaddump
4
Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm
connection. PCB mounted vertical without blown air.
5
not subject to production test, calculated by R
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
specified by design
has to be limited.
IN
and R
thJA
2 (one layer, 70µm thick) copper area for drain
ds(on)
thJA
thJS
MSL1
40/150/56
125
72
17 K/W
K/W
Page 2
2004-03-05
BSP 78
)
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Characteristics
Drain source clamp voltage
Tj = - 40 ...+ 150, ID = 10 mA
Off-state drain current
Tj = -40...+85 °C, VDS = 32 V , VIN = 0 V
Tj = 150 °C
Input threshold voltage
ID = 1.4 mA, Tj = 25 °C
ID = 1.4 mA, Tj = 150 °C
On state input current I
On-state resistance
VIN = 5 V, ID = 3 A, Tj = 25 °C
VIN = 5 V, ID = 3 A, Tj = 150 °C
On-state resistance
VIN = 10 V, ID = 3 A, Tj = 25 °C
= 10 V, ID = 3 A, Tj = 150 °C
V
IN
V
DS(AZ)
I
DSS
V
IN(th)
IN(on
R
DS(on)
R
DS(on)
42 - 55 V
-
-
1.3
0.8
1.5
5
1.7
-
8
15
2.2
-
- 10 30 µA
-
-
-
-
45
75
35
65
60
100
50
90
µA
V
mW
Nominal load current 5)
I
D(Nom)
VDS = 0.5 V, Tj < 150°C, VIN = 10 V, TA = 85 °C
Current limit (active if VDS>2.5 V)1)
I
D(lim)
VIN = 10 V, VDS = 12 V, tm = 200 µs
1
Device switched on into existing short circuit (see diagram Determination of I
and a short circuit occurs, these values might be exceeded for max. 50 µs.
5
not subject to production test, calculated by R
thJA
and R
Page 3
ds(on)
3 4 - A
18 24 30
). If the device is in on condition
D(lim)
2004-03-05
BSP 78
j
j
Electrical Characteristics
Parameter Symbol Values Unit
at Tj = 25°C, unless otherwise specified min. typ. max.
Dynamic Characteristics
Turn-on time VIN to 90% ID:
= 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
R
L
Turn-off time VIN to 10% ID:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Slew rate on 70 to 50% Vbb:
RL = 4.7 W, VIN = 0 to 10 V, Vbb = 12 V
Slew rate off 50 to 70% Vbb:
RL = 4.7 W, VIN = 10 to 0 V, Vbb = 12 V
Protection Functions
1)
Thermal overload trip temperature T
Thermal hysteresis
2)
Input current protection mode
Tj = 150 °C
Unclamped single pulse inductive energy 2)
= 3 A, Tj = 25 °C, Vbb = 12 V
I
D
t
on
t
off
-dVDS/dt
dVDS/dt
t
DT
t
I
IN(Prot)
E
AS
off
- 60 100
- 60 100
on
- 0.3 1.5
- 0.7 1.5
150 175 - °C
- 10 - K
- 130 300 µA
500 - - mJ
µs
V/µs
Inverse Diode
Inverse diode forward voltage
I
= 15 A, tm = 250 µs, VIN = 0 V,
F
V
SD
- 1 1.5
tP = 300 µs
1
Integrated protection functions are designed to prevent IC destruction under fault conditions
described in the data sheet. Fault conditions are considered as "outside" normal operating range.
Protection functions are not designed for continuous repetitive operation.
2
not subject to production test, specified by design
Page 4
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2004-03-05