Smart Lowside Power Switch
HITFET BSP 75N
Data Sheet Rev. 1.4
Features
• Logic Level Input
• Input protection (ESD)
• Thermal shutdown with auto restart
• Overload protection
• Short circuit protection
• Overvoltage protection
• Current limitation
• Green Product (RoHS compliant)
• AEC Stress Test Qualification
Application
• All kinds of resistive, inductive and capacitive loads in switching applications
• µC compatible power switch for 12 V and 24 V DC applications and for 42 Volt
Powernet
• Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET in Smart Power Technology. Fully protected by embedded
protection functions.
Type Ordering Code Package
HITFET BSP 75N on request PG-SOT223-4
Product Summary
Parameter Symbol Value Unit
Continuous drain source voltage V
On-state resistance R
Current limitation I
Nominal load current I
Clamping energy E
Data Sheet Rev. 1.4 1 2008-07-10
DS
DS(ON)
D(lim)
D(Nom)
AS
60 V
550 mΩ
1 A
0.7 A
550 mJ
HITFET BSP 75N
V
bb
HITFET
Logic OUTPUT
ESD
dV/dt
limitation
Over
temperature
Protection
IN
Figure 1 Block Diagram
Figure 2 Pin Configuration
Over voltage
Protection
Short circuit
Protection
Current
Limitation
1
IN
2
DRAIN
3
SOURCE
Stage
SOURCE
M
DRAIN
SOURCE
TAB
Pin Definitions and Functions
Pin No. Symbol Function
1 IN Input; activates output and supplies internal logic
2 DRAIN Output to the load
3 + TAB SOURCE Ground; pin3 and TAB are internally connected
Data Sheet Rev. 1.4 2 2008-07-10
HITFET BSP 75N
Circuit Description
The BSP 75N is a monolithic power switch in Smart Power Technology (SPT) with a
logic level input, an open drain DMOS output stage and integrated protection functions.
It is designed for all kind of resistive and inductive loads (relays, solenoid) in automotive
and industrial applications.
Protection Functions
• Over voltage protection: An internal clamp limits the output voltage at V
60V) when inductive loads are switched off.
• Current limitation: By means of an internal current measurement the drain current is
limited at I
(1.4 - 1.5 A typ.). If the current limitation is active the device operates
D(lim)
in the linear region, so power dissipation may exceed the capability of the heatsink.
This operation leads to an increasing junction temperature until the over temperature
threshold is reached.
• Over temperature and short circuit protection: This protection is based on sensing
the chip temperature. The location of the sensor ensures a fast and accurate junction
temperature detection. Over temperature shutdown occurs at minimum 150
hysteresis of typ. 10 K enables an automatic restart by cooling.
The device is ESD protected according Human Body Model (4 kV) and load dump
protected (see Maximum Ratings).
DS(AZ)
(min.
°C. A
Data Sheet Rev. 1.4 3 2008-07-10
HITFET BSP 75N
Absolute Maximum Ratings
T
= 25 °C, unless otherwise specified
j
Parameter Symbol Values Unit Remarks
Continuous drain source voltage
Drain source voltage for
short circuit protection
Continuous input voltage V
Peak input voltage V
Continuous Input Current
-0.2V ≤ V
V
<-0.2V or VIN>10V
IN
≤ 10V
IN
Operating temperature range
Storage temperature range
Power dissipation (DC) P
Unclamped single pulse inductive energy E
Load dump protection
2)
IN = low or high (8 V); RL = 50 Ω
IN = high (8 V); RL = 22 Ω
Electrostatic discharge voltage (Human
Body Model)
according to MIL STD 883D, method
3015.7 and EOS/ESD assn. standard
S5.1 - 1993
1)
V
DS
V
DS
IN
IN
I
IN
60 V –
36 V –
-0.2 … +10 V –
-0.2 … +20 V –
mA –
no limit
| IIN |≤ 2mA
T
j
T
stg
tot
AS
V
LoadDump
V
ESD
-40 … +150
-55 … +150°C°C
1.8 W –
550 mJ I
V V
80
47
4000 V –
–
= 0.7 A;
D(ISO)
V
=32V
bb
LoadDump
V
+ VS;
P
V
= 13.5 V
P
3)
R
= 2 Ω;
I
t
= 400 ms;
d
=
Thermal Resistance
Junction soldering point R
Junction - ambient
1)
See also Figure 7 and Figure 10.
2)
V
is setup without DUT connected to the generator per ISO 7637-1 and DIN 40 839. See also page 7.
LoadDump
3)
R
= internal resistance of the load dump test pulse generator LD200.
I
4)
Device on epoxy pcb 40 mm × 40 mm × 1.5 mm with 6 cm2 copper area for pin 4 connection.
Data Sheet Rev. 1.4 4 2008-07-10
4)
thJS
R
thJA
≤ 10 K/W –
≤ 70 K/W –
Electrical Characteristics
T
= 25 °C, unless otherwise specified
j
Parameter Sym-
bol
Static Characteristics
HITFET BSP 75N
Limit Values Unit Test Conditions
min. typ. max.
Drain source clamp voltage V
Off state drain current I
Input threshold voltage V
Input current:
normal operation, ID < I
current limitation mode, ID = I
D(lim)
:
D(lim)
:
After thermal shutdown, ID = 0 A:
On-state resistance
T
= 25 °C
j
T
= 150 °C
j
On-state resistance
T
= 25 °C
j
T
= 150 °C
j
Nominal load current I
Current limit I
Dynamic Characteristics
1)
DS(AZ)
DSS
IN(th)
I
IN(1)
I
IN(2)
I
IN(3)
R
DS(on)
R
DS(on)
D(Nom)
D(lim)
60 – 75 V ID = 10 mA,
T
= -40 … +150 °C
j
– – 5 µA VIN = 0 V,
V
= 32 V,
DS
T
= -40 … +150 °C
j
1 1.8 2.5 V ID = 10 mA
µA VIN = 5 V
–
100
200
–
250
400
1000
1500
2000
mΩ ID = 0.7 A,
–
490
675
–
850
1350
V
= 5 V
IN
mΩ ID = 0.7 A,
–
430
550
–
750
1000
V
IN
= 10 V
0.7 – – A VBB = 12 V,
V
= 0.5 V,
DS
T
= 85 °C,
S
T
< 150 °C
j
1 1.5 1.9 A VIN = 10 V,
V
= 12 V
DS
Turn-on time VIN to 90% ID: t
Turn-off time VIN to 10% ID: t
Data Sheet Rev. 1.4 5 2008-07-10
– 10 20 µs RL = 22 Ω,
on
– 10 20 µs RL = 22 Ω,
off
V
= 0 to 10 V,
IN
V
= 12 V
BB
V
= 10 to 0 V,
IN
V
= 12 V
BB