INFINEON BSP 62 SMD Datasheet
PNP Silicon Darlington Transistors
High collector current
Low collector-emitter saturation voltage
Complementary types: BSP50 ... BSP52 (NPN)
BSP60 ... BSP62
4
3
2
1
Type Marking Pin Configuration Package
BSP60
BSP61
BSP62
BSP 60
BSP 61
BSP 62
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-base voltage V
Emitter-base voltage V
DC collector current I
Peak collector current I
Base current mA100I
1 = B
1 = B
1 = B
2 = C
2 = C
2 = C
Symbol
CEO
CBO
EBO
C
CM
B
3 = E
3 = E
3 = E
4 = C
4 = C
4 = C
SOT223
SOT223
SOT223
BSP60 BSP61 BSP62
45 60 80 V
60 80 90
5 5 5
1 A
2
VPS05163
Unit
Total power dissipation, TS = 124 °C P
Junction temperature T
Storage temperature T
Thermal Resistance
Junction - soldering point
1
For calculation of R
thJA
1)
please refer to Application Note Thermal Resistance
1.5 W
150 °C
-65 ... 150
17 K/W
R
tot
j
stg
thJS
1 Nov-30-2001
BSP60 ... BSP62
A
)
Electrical Characteristics at T
= 25°C, unless othertwise specified
Parameter Symbol Values Unit
min. typ. max.
DC Characteristics
Collector-emitter breakdown voltage
I
= 10 mA, IB = 0
C
Collector-base breakdown voltage
I
= 100 µA, IE = 0
C
Emitter-base breakdown voltage
I
= 100 µA, IC = 0
E
Collector-emitter cutoff current
V
CE
= V
CEOmax
, VBE = 0
BSP60
BSP61
BSP62
BSP60
BSP61
BSP62
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CES
45
60
80
60
80
90
-
-
-
-
-
-
-
-
-
-
-
-
5 - -
- - 10 µA
V
Emitter cutoff current
V
= 4 V, IC = 0
EB
DC current gain 1)
I
= 150 mA, VCE = 10 V
C
I
= 500 mA, VCE = 10 V
C
Collector-emitter saturation voltage1
I
= 500 mA, IB = 0.55 mA
C
I
= 1 A, IB = 1 mA
C
Base-emitter saturation voltage 1)
I
= 500 mA, IB = 0.5 mA
C
I
= 1 A, IB = 1 mA
C
AC Characteristics
Transition frequency
I
= 100 mA, VCE = 5 V, f = 100 MHz
C
Turn-on time
I
= 500 mA, IB1 = IB2 = 0.5mA
C
I
EBO
h
FE
V
CEsat
V
BEsat
f
T
t
(on)
- - 10
1000
2000
-
-
-
-
-
-
-
-
-
-
-
-
1.3
1.8
1.9
2.2
- 200 - MHz
- 400 - ns
-
V
Turn-off time
= 500 mA, IB1 = IB2 = 0.5mA
I
C
1) Pulse test: t ≤ 300µs, D = 2%
t
(off)
- 1500 -
2 Nov-30-2001
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