
•
High-side switch
•
Short-circuit protection
•
Input protection
•
Overtemperature protection with hysteresis
•
Overload protection
•
Overvoltage protection
•
Switching inductive load
•
Clamp of negative output voltage with inductive loads
•
Undervoltage shutdown
•
Maximum current internally limited
•
Electrostatic discharge (ESD) protection
•
Reverse battery protection
• AEC qualified
Package: SOT 223
• Green product (RoHS compliant)
1
)
Smart High-Side Power Switch
BSP452
SOT-223
1
SOT-223
PG-SOT-223
Type
BSP 452
Ordering code
Q67000-S271
Application
•
µ
C compatible power switch for 12 V DC grounded loads
•
All types of resistive, inductive and capacitive loads
•
Replaces electromechanical relays and discrete circuits
General Description
N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically
integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.
Blockdiagramm:
+ V
bb
Voltage
source
ESDDiode
R
in
IN
3
ESD
V
Voltage
sensor
Logic
Logic
Overvoltage
protection
Charge pump
Level shifter
Rectifier
Current
limit
Gate
protection
Limit for
unclamped
ind. loads
Temperature
sensor
4
OUT
1
Load
GND
miniPROFET
2
Load GND
1
)
With resistor R
limited by connected load.
=150 Ω in GND connection, resistor in series with IN connections reverse load current
GND
Signal GND
Data Sheet 1 V1.0, 2007-05-25

Smart High-Side Power Switch
BSP452
Pin Symbol Function
1 OUT O Output to the load
2 GND - Logic ground
3 IN I Input, activates the power switch in case of logical high signal
4 Vbb + Positive power supply voltage
Maximum Ratings at
T
j = 25 °C unless otherwise specified
Parameter Symbol Values Unit
Supply voltage
Load current self-limited
2
Maximum input voltage
)
Maximum input current
Inductive load switch-off energy dissipation,
single pulse
I
L = 0.5A , TA = 150°C
V
I
V
I
E
bb
L
IN
IN
AS
-5.0...
40 V
I
L(SC
V
bb
±5 mA
0.5 J
(not tested, specified by design)
Load dump protection
R
=2Ω ,
I
t
=400ms, IN= low or high,
d
3
)
V
LoadDump
=
U
+
V
A
s
U
=13,5V
A
R
R
L
L
= 24Ω
= 80Ω
V
Load dump
4
)
60
80
(not tested, specified by design)
5
Electrostatic discharge capability (ESD)
Operating temperature range
Storage temperature range
6
Max. power dissipation (DC)
)
)
PIN 3
PIN 1,2,4
T
A = 25 °C
V
T
T
P
ESD
j
stg
tot
±1
±2
-40 ...+150
-55 ...+150
1.8 W
A
V
V
kV
°C
Thermal resistance chip - soldering point:
chip - ambient:
2
)
At VIN > Vbb, the input current is not allowed to exceed ±5 mA.
3
)
Supply voltages higher than V
A resistor for the protection of the input is integrated.
4
)
V
Load dump
5
)
HBM according to MIL-STD 883D, Methode 3015.7
6
)
BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection
Data Sheet 2 V1.0, 2007-05-25
is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839
require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection
bb(AZ)
R
thJS
6)
R
thJA
770K/W

Smart High-Side Power Switch
BSP452
Electrical Characteristics
Parameter and Conditions Symbol Values Unit
at
T
= 25 °C,
j
V
= 13.5V unless otherwise specified
bb
min typ max
Load Switching Capabilities and Characteristics
On-state resistance (pin 4 to 1)
--
I
= 0.5 A,
L
Nominal load current (pin 4 to 1)
ISO Standard:
T
= 85 °C
S
V
in = high
V
ON =
V
bb
T
= 25°C
j
T
= 150°C
7
)
V
OUT
= 0.5 V
-
j
Turn-on time to 90%
Turn-off time to 10%
R
= 24 Ω
L
Slew rate on
10 to 30%
V
OUT
,
R
= 24 Ω
L
Slew rate off
70 to 40%
V
OUT
,
R
L
= 24 Ω
V
V
OUT
OUT
R
ON
I
L(ISO)
t
on
t
off
V
d
V
-d
/dt
/dt
on
off
0.16
--
--
0.7 -- -- A
--
--
60
60
-- 2 4 V/µs
-- 2 4 V/µs
0.2
0.4
100
150
Ω
µs
Input
Allowable input voltage range, (pin 3 to 2)
Input turn-on threshold voltage
T
= -40...+150°C
j
Input turn-off threshold voltage
T
= -40...+150°C
j
Input threshold hysteresis
Off state input current (pin 3)
On state input current (pin 3)
V
V
IN(off) = 1.2 V
T
= -40...+150°C
j
IN(on) = 3.0 V to
T
= -40...+150°C
j
Input resistance
7
)
I
L(ISO)
is limited by current limitation, see
I
L(SC)
, next page
V
IN
V
IN(T+)
V
IN(T-)
∆
V
IN(T)
I
IN(off)
V
I
bb
IN(on)
R
IN
-3.0 --
V
bb
-- -- 3.5 V
1.5 -- -- V
-- 0.5 -- V
10 -- 60 µA
10 -- 100 µA
1.5 2.8 3.5 kΩ
V
Data Sheet 3 V1.0, 2007-05-25