Infineon BSP452 Schematics

•

High-side switch

•

Short-circuit protection

•

Input protection

•

Overtemperature protection with hysteresis

•

Overload protection

•

Overvoltage protection

•

Switching inductive load

•

Clamp of negative output voltage with inductive loads

•

Undervoltage shutdown

•

Maximum current internally limited

•

Electrostatic discharge (ESD) protection

•

Reverse battery protection

• AEC qualified

Package: SOT 223

• Green product (RoHS compliant)

1

)

Smart High-Side Power Switch

BSP452

SOT-223

1

SOT-223

PG-SOT-223

Type

BSP 452

Ordering code

Q67000-S271

Application

•

µ

C compatible power switch for 12 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Blockdiagramm:

+ V

bb

Voltage

source

ESDDiode

R

in

IN

3

ESD

V

Voltage

sensor

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

4

OUT

1

Load

GND

miniPROFET

2

Load GND

1

)

With resistor R

limited by connected load.

=150 Ω in GND connection, resistor in series with IN connections reverse load current

GND

Signal GND

Data Sheet 1 V1.0, 2007-05-25

Smart High-Side Power Switch

)

BSP452

Pin Symbol Function

1 OUT O Output to the load

2 GND - Logic ground

3 IN I Input, activates the power switch in case of logical high signal

4 Vbb + Positive power supply voltage

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage Load current self-limited

2

Maximum input voltage

)

Maximum input current Inductive load switch-off energy dissipation, single pulse

I

L = 0.5A , TA = 150°C

V I V I E

bb

L

IN

AS

-5.0...

40 V

I

L(SC

V

bb

±5 mA

0.5 J

(not tested, specified by design) Load dump protection

R

=2Ω ,

I

t

=400ms, IN= low or high,

d

3

)

V

LoadDump

=

U

+

V

A

s

U

=13,5V

A

R

L

= 24Ω

= 80Ω

V

Load dump

4

)

60 80

(not tested, specified by design)

5

Electrostatic discharge capability (ESD)

Operating temperature range Storage temperature range

6

Max. power dissipation (DC)

)

PIN 3

PIN 1,2,4

T

A = 25 °C

V

T T P

ESD

j

stg

tot

±1 ±2

-40 ...+150

-55 ...+150

1.8 W

A V

V

kV

°C

Thermal resistance chip - soldering point:

chip - ambient:

2

)

At VIN > Vbb, the input current is not allowed to exceed ±5 mA.

3

)

Supply voltages higher than V

A resistor for the protection of the input is integrated.

4

)

V

Load dump

5

)

HBM according to MIL-STD 883D, Methode 3015.7

6

)

BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

Data Sheet 2 V1.0, 2007-05-25

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection

bb(AZ)

R

thJS

6)

R

thJA

770K/W

Smart High-Side Power Switch

BSP452

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

V

= 13.5V unless otherwise specified

bb

min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1)

--

I

= 0.5 A,

L

Nominal load current (pin 4 to 1) ISO Standard:

T

= 85 °C

S

V

in = high

V

ON =

V

bb

T

= 25°C

j

T

= 150°C

7

)

V

OUT

= 0.5 V

-

j

Turn-on time to 90% Turn-off time to 10%

R

= 24 Ω

L

Slew rate on 10 to 30%

V

OUT

,

R

= 24 Ω

L

Slew rate off

70 to 40%

V

OUT

,

R

L

= 24 Ω

V V

OUT

R

ON

I

L(ISO)

t

on

t

off

V

d

V

-d

/dt

on

off

0.16

--

0.7 -- -- A

--

60 60

-- 2 4 V/µs

0.2

0.4

100 150

Ω

µs

Input

Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage

T

= -40...+150°C

j

Input turn-off threshold voltage

T

= -40...+150°C

j

Input threshold hysteresis Off state input current (pin 3)

On state input current (pin 3)

V

IN(off) = 1.2 V

T

= -40...+150°C

j

IN(on) = 3.0 V to

T

= -40...+150°C

j

Input resistance

7

)

I

L(ISO)

is limited by current limitation, see

I

L(SC)

, next page

V

IN

V

IN(T+)

V

IN(T-)

∆

V

IN(T)

I

IN(off)

V

I

bb

IN(on)

R

IN

-3.0 --

V

bb

-- -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

10 -- 60 µA

10 -- 100 µA

1.5 2.8 3.5 kΩ

V

Data Sheet 3 V1.0, 2007-05-25

Smart High-Side Power Switch

T

j

BSP452

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Operating Parameters

Operating voltage Undervoltage shutdown Undervoltage restart

Undervoltage restart of charge pumpe see diagram page 7

Undervoltage hysteresis

∆

V

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Standby current (pin 4), Operating current (pin 2), leakage current (pin 1)

V

= 13.5V unless otherwise specified

bb

8

)

7

=

V

bb(u rst)

-

V

bb(under)

V

in = low

V

in = 5 V

in = low

T

=-40...+150°C

j

T

=-40...+150°C

j

=-40...+25°C

T

=+150°C

j

T

=-40...+150°C

j

T

=-40...+150°C

j

T

=-40...+150°C ∆

j

T

=-40...+150°C

j

T

=-40...+25°C

j

T

=150°C

j

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

∆

V

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

I

bb(off)

I

GND

I

L(off)

min typ max

5.0 -- 34 V

3.5 -- 5 V

-- -- 6.5

7.0

-- 5.6 7 V

-- 0.3 -- V

34 -- 42 V 33 -- -- V

-- 0.7 -- V

-- 10 25 µA

-- 1 1.6 mA

-- 2 5 7

V

µA

Protection Functions

Current limit (pin 4 to 1)

V

bb = 20V

Overvoltage protection

I

bb

=4mA

T

Output clamp (ind. load switch off) at

V

=

V

-

OUT

bb

V

ON(CL)

I

,

bb

= 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation

T

= 150 °C, single pulse,

j Start

I

= 0.5 A,

L

T

= 25°C

j

= -40...+150°C

j

=-40...+150°C

j

9

)

V

= 12 V

bb

I

L(SC)

V

bb(AZ)

V

ON(CL)

T

jt

∆

T

E

AS

0.7

1.5

-41 -- -- V 41

47

150 -- -- °C

jt

-- 10 -- K

-- -- 0.5 J

(not tested, specified by design)

10

Reverse battery (pin 4 to 2)

)

V

-

bb

-- -- 30 V

(not tested, specified by design)

8

)

At supply voltage increase up to

9

)

While demagnetizing load inductance, dissipated energy in PROFET is

E

=1/2*

AS

10

)

Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

2

L

*

V

I

* (

L

V

ON(CL)

-

V

= 5.6 V typ without charge pump,

bb

)

V

bb

V

OUT

E

AS

=

V

≈

V

∫

- 2 V

bb

ON(CL)

i

*

(t) dt, approx.

L

2

2.4

-- V

A

Data Sheet 4 V1.0, 2007-05-25