Infineon BSP452 Schematics

•

High-side switch

•

Short-circuit protection

•

Input protection

•

Overtemperature protection with hysteresis

•

Overload protection

•

Overvoltage protection

•

Switching inductive load

•

Clamp of negative output voltage with inductive loads

•

Undervoltage shutdown

•

Maximum current internally limited

•

Electrostatic discharge (ESD) protection

•

Reverse battery protection

• AEC qualified

Package: SOT 223

• Green product (RoHS compliant)

1

)

Smart High-Side Power Switch

BSP452

SOT-223

1

SOT-223

PG-SOT-223

Type

BSP 452

Ordering code

Q67000-S271

Application

•

µ

C compatible power switch for 12 V DC grounded loads

•

All types of resistive, inductive and capacitive loads

•

Replaces electromechanical relays and discrete circuits

General Description

N channel vertical power FET with charge pump, ground referenced CMOS compatible input,monolithically integrated in Smart SIPMOS technology. Fully protected by embedded protection functions.

Blockdiagramm:

+ V

bb

Voltage

source

ESDDiode

R

in

IN

3

ESD

V

Voltage

sensor

Logic

Overvoltage

protection

Charge pump

Level shifter

Rectifier

Current

limit

Gate

protection

Limit for

unclamped

ind. loads

Temperature

sensor

4

OUT

1

Load

GND

miniPROFET

2

Load GND

1

)

With resistor R

limited by connected load.

=150 Ω in GND connection, resistor in series with IN connections reverse load current

GND

Signal GND

Data Sheet 1 V1.0, 2007-05-25

Smart High-Side Power Switch

)

BSP452

Pin Symbol Function

1 OUT O Output to the load

2 GND - Logic ground

3 IN I Input, activates the power switch in case of logical high signal

4 Vbb + Positive power supply voltage

Maximum Ratings at

T

j = 25 °C unless otherwise specified

Parameter Symbol Values Unit

Supply voltage Load current self-limited

2

Maximum input voltage

)

Maximum input current Inductive load switch-off energy dissipation, single pulse

I

L = 0.5A , TA = 150°C

V I V I E

bb

L

IN

AS

-5.0...

40 V

I

L(SC

V

bb

±5 mA

0.5 J

(not tested, specified by design) Load dump protection

R

=2Ω ,

I

t

=400ms, IN= low or high,

d

3

)

V

LoadDump

=

U

+

V

A

s

U

=13,5V

A

R

L

= 24Ω

= 80Ω

V

Load dump

4

)

60 80

(not tested, specified by design)

5

Electrostatic discharge capability (ESD)

Operating temperature range Storage temperature range

6

Max. power dissipation (DC)

)

PIN 3

PIN 1,2,4

T

A = 25 °C

V

T T P

ESD

j

stg

tot

±1 ±2

-40 ...+150

-55 ...+150

1.8 W

A V

V

kV

°C

Thermal resistance chip - soldering point:

chip - ambient:

2

)

At VIN > Vbb, the input current is not allowed to exceed ±5 mA.

3

)

Supply voltages higher than V

A resistor for the protection of the input is integrated.

4

)

V

Load dump

5

)

HBM according to MIL-STD 883D, Methode 3015.7

6

)

BSP 452 on epoxy pcb 40 mm x 40 mm x 1.5 mm with 6 cm2 copper area for Vbb connection

Data Sheet 2 V1.0, 2007-05-25

is setup without the DUT connected to the generator per ISO 7637-1 and DIN 40839

require an external current limit for the GND pin, e.g. with a 150 Ω resistor in the GND connection

bb(AZ)

R

thJS

6)

R

thJA

770K/W

Smart High-Side Power Switch

BSP452

Electrical Characteristics

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

V

= 13.5V unless otherwise specified

bb

min typ max

Load Switching Capabilities and Characteristics

On-state resistance (pin 4 to 1)

--

I

= 0.5 A,

L

Nominal load current (pin 4 to 1) ISO Standard:

T

= 85 °C

S

V

in = high

V

ON =

V

bb

T

= 25°C

j

T

= 150°C

7

)

V

OUT

= 0.5 V

-

j

Turn-on time to 90% Turn-off time to 10%

R

= 24 Ω

L

Slew rate on 10 to 30%

V

OUT

,

R

= 24 Ω

L

Slew rate off

70 to 40%

V

OUT

,

R

L

= 24 Ω

V V

OUT

R

ON

I

L(ISO)

t

on

t

off

V

d

V

-d

/dt

on

off

0.16

--

0.7 -- -- A

--

60 60

-- 2 4 V/µs

0.2

0.4

100 150

Ω

µs

Input

Allowable input voltage range, (pin 3 to 2) Input turn-on threshold voltage

T

= -40...+150°C

j

Input turn-off threshold voltage

T

= -40...+150°C

j

Input threshold hysteresis Off state input current (pin 3)

On state input current (pin 3)

V

IN(off) = 1.2 V

T

= -40...+150°C

j

IN(on) = 3.0 V to

T

= -40...+150°C

j

Input resistance

7

)

I

L(ISO)

is limited by current limitation, see

I

L(SC)

, next page

V

IN

V

IN(T+)

V

IN(T-)

∆

V

IN(T)

I

IN(off)

V

I

bb

IN(on)

R

IN

-3.0 --

V

bb

-- -- 3.5 V

1.5 -- -- V

-- 0.5 -- V

10 -- 60 µA

10 -- 100 µA

1.5 2.8 3.5 kΩ

V

Data Sheet 3 V1.0, 2007-05-25

Smart High-Side Power Switch

T

j

BSP452

Parameter and Conditions Symbol Values Unit

at

T

= 25 °C,

j

Operating Parameters

Operating voltage Undervoltage shutdown Undervoltage restart

Undervoltage restart of charge pumpe see diagram page 7

Undervoltage hysteresis

∆

V

bb(under)

Overvoltage shutdown Overvoltage restart Overvoltage hysteresis Standby current (pin 4), Operating current (pin 2), leakage current (pin 1)

V

= 13.5V unless otherwise specified

bb

8

)

7

=

V

bb(u rst)

-

V

bb(under)

V

in = low

V

in = 5 V

in = low

T

=-40...+150°C

j

T

=-40...+150°C

j

=-40...+25°C

T

=+150°C

j

T

=-40...+150°C

j

T

=-40...+150°C

j

T

=-40...+150°C ∆

j

T

=-40...+150°C

j

T

=-40...+25°C

j

T

=150°C

j

V

bb(on)

V

bb(under)

V

bb(u rst)

V

bb(ucp)

∆

V

bb(under)

V

bb(over)

V

bb(o rst)

V

bb(over)

I

bb(off)

I

GND

I

L(off)

min typ max

5.0 -- 34 V

3.5 -- 5 V

-- -- 6.5

7.0

-- 5.6 7 V

-- 0.3 -- V

34 -- 42 V 33 -- -- V

-- 0.7 -- V

-- 10 25 µA

-- 1 1.6 mA

-- 2 5 7

V

µA

Protection Functions

Current limit (pin 4 to 1)

V

bb = 20V

Overvoltage protection

I

bb

=4mA

T

Output clamp (ind. load switch off) at

V

=

V

-

OUT

bb

V

ON(CL)

I

,

bb

= 4mA Thermal overload trip temperature Thermal hysteresis Inductive load switch-off energy dissipation

T

= 150 °C, single pulse,

j Start

I

= 0.5 A,

L

T

= 25°C

j

= -40...+150°C

j

=-40...+150°C

j

9

)

V

= 12 V

bb

I

L(SC)

V

bb(AZ)

V

ON(CL)

T

jt

∆

T

E

AS

0.7

1.5

-41 -- -- V 41

47

150 -- -- °C

jt

-- 10 -- K

-- -- 0.5 J

(not tested, specified by design)

10

Reverse battery (pin 4 to 2)

)

V

-

bb

-- -- 30 V

(not tested, specified by design)

8

)

At supply voltage increase up to

9

)

While demagnetizing load inductance, dissipated energy in PROFET is

E

=1/2*

AS

10

)

Requires 150 Ω resistor in GND connection. Reverse load current (through intrinsic drain-source diode) is normally limited by the connected load.

2

L

*

V

I

* (

L

V

ON(CL)

-

V

= 5.6 V typ without charge pump,

bb

)

V

bb

V

OUT

E

AS

=

V

≈

V

∫

- 2 V

bb

ON(CL)

i

*

(t) dt, approx.

L

2

2.4

-- V

A

Data Sheet 4 V1.0, 2007-05-25

Smart High-Side Power Switch

BSP452

Max. allowable power dissipation P

= f (TA,TSP)

tot

P

[W]

tot

18

16

14

12

T

SP

10

8

6

4

T

2

0

0 25 50 75 100 125 150

A

TA, TSP[°C]

Current limit characteristic I

= f (Von); (Von see testcircuit)

L(SC)

I

[A]

L(SC)

2

1.8

1.6

1.4

1.2

1

0.8

0.6

0.4

0.2

0

02468101214

150°C

25°C

-40°C

Von [V]

On state resistance (Vbb-pin to OUT-pin) RON = f (Tj); Vbb = 13.5 V; IL = 0.5 A

RON [Ω]

0.4

0.35

0.3

0.25

0.2

0.15

0.1

0.05

0

-50 -25 0 25 50 75 100 125 150

98%

Typ. input current IIN = f (VIN); Vbb = 13,5 V

IIN [µA]

50

45

40

35

30

25

20

15

10

5

0

02468101214

Tj [°C]

-40°C

+25°C

+150°C

VIN [V]

Data Sheet 5 V1.0, 2007-05-25

Smart High-Side Power Switch

BSP452

Typ. operating current I

= f (Tj); Vbb = 13,5 V; VIN = high

GND

I

[mA]

GND

0.8

0.7

0.6

0.5

0.4

0.3

0.2

0.1

0

-50 -25 0 25 50 75 100 125 150

Typ. overload current I

= f (t); Vbb = 13,5 V, no heatsink, Param.: T

L(lim)

I

[A]

L(lim)

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-50 0 50 100 150 200 250 300 350 400

Tj [°C]

+150°C

+25°C

jstart

-40°C

t [ms]

Typ. standby current I

bb(off)

I

bb(off)

= f (Tj); Vbb = 13,5 V; VIN = low

[µA]

8

7

6

5

4

3

2

1

0

-50 -25 0 25 50 75 100 125 150

Short circuit current I

L(SC)

I

L(SC)

1.4

1.2

1

0.8

0.6

0.4

0.2

0

-50 -25 0 25 50 75 100 125 150

Tj [°C]

= f (Tj); Vbb = 13,5 V

[A]

Tj [°C]

Data Sheet 6 V1.0, 2007-05-25

Smart High-Side Power Switch

BSP452

Typ. input turn on voltage threshold V

V

= f (Tj);

IN(T+)

[V]

IN(T+)

3

13V

2.5

2

1.5

1

0.5

0

-50 -25 0 25 50 75 100 125 150

Tj [°C]

Figure 6: Undervoltage restart of charge pumpe

[V]

V

ON

V

bb(over)

V

bb(u rst)

V

bb(under)

charge pump starts at V

bb(u cp)

bb(ucp)

about 7 V typ.

bb(o rst)

V

bb

[V]

Typ. on-state resistance (Vbb-Pin to Out-Pin) RON = f (Vbb,IL); IL=0.5A, Tj = 25°C

RON [mΩ]

300

250

200

150

100

50

0

0 5 10 15 20 25

Test circuit

Vbb [V]

Data Sheet 7 V1.0, 2007-05-25

Package Outlines

Smart High-Side Power Switch

BSP452

±0.1

0.1 max

15˚max

min

0.5

1.6

0.28

±0.2

3.5

±0.04

±0.2

±0.1

6.5

±0.1

3

4

21

3

2.3

4.6

+0.2

acc. to DIN 6784

±0.3

7

A

B

0.7

0.25

M

A

0.25

M

B

Figure 1 PG-SOT-223 (Plastic Dual Small Outline Package) (RoHS-compliant)

To meet the world-wide customer requirements for environmentally friendly products and to be compliant with government regulations the device is available as a green product. Green products are RoHS-Compliant (i.e Pbfree finish on leads and suitable for Pb-free soldering according to IPC/JEDEC J-STD-020).

Please specify the package needed (e.g. green package) when placing an order

You can find all of our packages, sorts of packing and others in our Infineon Internet Page “Products”: http://www.infineon.com/products.

Dimensions in mm

Data Sheet 8 V1.0, 2007-05-25

Revision History

Version Date Changes

1.0 2007-05-25 Creation of the green datasheet. First page : Adding the green logo and the AEC qualified Adding the bullet AEC qualified and the RoHS compliant features Package page Modification of the package to be green.

Smart High-Side Power Switch

BSP452

Data Sheet 9 V1.0, 2007-05-25

Edition 2007-05-25

Published by Infineon Technologies AG 81726 Munich, Germany

Legal Disclaimer

The information given in this document shall in no event be regarded as a guarantee of conditions or characteristics (“Beschaffenheitsgarantie”). With respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, Infineon Technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation warranties of non-infringement of intellectual property rights of any third party.

Information

For further information on technology, delivery terms and conditions and prices please contact your nearest Infineon Technologies Office (www.infineon.com).

Warnings

Due to technical requirements components may contain dangerous substances. For information on the types in question please contact your nearest Infineon Technologies Office.

Infineon Technologies Components may only be used in life-support devices or systems with the express written approval of Infineon Technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system. Life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health of the user or other persons may be endangered.

Infineon BSP452 Schematics

Specifications and Main Features

Frequently Asked Questions

User Manual