INFINEON BSP 373 User Manual
BSP 373
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
•
V
Pb-free lead plating; RoHS compliant available
•
Type
BSP 373 100 V 1.7 A 0.3
Type RoHS compliant Tape and Reel Information
= 2.1 ... 4.0 V
GS(th)
V
DS
I
D
R
DS(on)
Ω
Package Marking
PG-SOT-223 BSP 373
BSP 373 No E6327
BSP 373
L6327
Yes
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter
Continuous drain current
T
= 28 ˚C
A
DC drain current, pulsed
T
= 25 ˚C
A
Avalanche energy, single pulse
I
= 1.7 A,
D
L
= 23.3 mH,
V
DD
= 25 V,
T
= 25 ˚C
j
R
= 25
GS
Gate source voltage
Power dissipation
T
= 25 ˚C
A
Ω
Symbol Values Unit
I
D
A
1.7
I
Dpuls
6.8
E
AS
mJ
45
V
GS
P
tot
±
20 V
W
1.8
Rev 1.1 1 2005-10-27
Maximum Ratings
BSP 373
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point
1)
Symbol Values Unit
R
T
T
R
j
stg
thJA
thJS
-55 ... + 150 ˚C
-55 ... + 150
≤
70 K/W
≤
10
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
Parameter Symbol Values Unit
Static Characteristics
at
T
= 25˚C, unless otherwise specified
j
min. typ. max.
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 0 ˚C
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 100 V,
= 100 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= 10 V,
GS
I
= 1.7 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
100 - -
2.1 3 4
-
-
0.1
10
1
100
- 10 100
- 0.16 0.3
V
µA
nA
Ω
Rev 1.1 2 2005-10-27
BSP 373
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
V
≥
2
DS
I
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Rise time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Turn-off delay time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
Fall time
V
DD
R
GS
= 30 V,
= 50
Ω
V
GS
= 10 V,
at
T
= 25˚C, unless otherwise specified
j
g
fs
= 1.7 A
C
iss
C
oss
C
rss
t
d(on)
I
= 0.3 A
D
t
r
I
= 0.3 A
D
t
d(off)
I
= 0.3 A
D
t
f
I
= 0.3 A
D
min. typ. max.
S
1.5 2.8 pF
- 400 550
- 125 190
- 70 105
ns
- 10 15
- 30 45
- 85 115
- 60 80
Rev 1.1 3 2005-10-27
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