INFINEON BSP 372 User Manual
BSP 372
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Logic Level
• Avalanche rated
•
V
•
Pb-free lead plating; RoHS compliant
Type
BSP 372 100 V 1.7 A 0.31
Type Tape and Reel Information
BSP 372 E6327
BSP 372
= 0.8 ...2.0 V
GS(th)
V
DS
Package
I
D
P-SOT-223
PG-SOT-223
R
DS(on)
L6327
Ω
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter
Continuous drain current
T
= 28 ˚C
A
DC drain current, pulsed
T
= 25 ˚C
A
Avalanche energy, single pulse
I
= 1.7 A,
D
L
= 23.3 mH,
V
DD
= 25 V,
T
= 25 ˚C
j
R
= 25
GS
Ω
Gate source voltage
Gate-source peak voltage,aperiodic
Power dissipation
T
= 25 ˚C
A
Symbol Values Unit
I
D
A
1.7
I
Dpuls
6.8
E
AS
mJ
45
V
GS
V
gs
P
tot
±
14 V
±
20
W
1.8
Rev 1.1 1 2005-11-23
Maximum Ratings
BSP 372
Parameter
Chip or operating temperature
Storage temperature
Thermal resistance, chip to ambient air
1)
Thermal resistance, junction-soldering point
1)
Symbol Values Unit
T
T
R
R
j
stg
thJA
thJS
-55 ... + 150 ˚C
-55 ... + 150
≤
70 K/W
≤
10
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
at
T
= 25˚C, unless otherwise specified
j
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V,
GS
I
= 0.25 mA,
D
T
= 0 ˚C
j
Gate threshold voltage
V
GS
V
=
DS, ID
= 1 mA
Zero gate voltage drain current
V
DS
V
DS
= 100 V,
= 100 V,
V
V
GS
GS
= 0 V,
= 0 V,
T
= 25 ˚C
j
T
= 125 ˚C
j
Gate-source leakage current
V
= 20 V,
GS
V
DS
= 0 V
Drain-Source on-state resistance
V
= 5 V,
GS
I
= 1.7 A
D
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
100 - -
0.8 1.4 2
-
-
0.1
10
1
100
- 10 100
- 0.24 0.31
V
µA
nA
Ω
Rev 1.1 2 2005-11-23
BSP 372
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
≥
V
DS
I
2
*
D * RDS(on)max, ID
Input capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Output capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Reverse transfer capacitance
V
= 0 V,
GS
V
= 25 V, f = 1 MHz
DS
Turn-on delay time
V
DD
R
G
= 30 V,
= 50
Ω
V
= 5 V,
GS
Rise time
V
DD
R
G
= 30 V,
= 50
Ω
V
= 5 V,
GS
Turn-off delay time
V
DD
R
G
= 30 V,
= 50
Ω
V
= 5 V,
GS
Fall time
V
DD
R
G
= 30 V,
= 50
Ω
V
= 5 V,
GS
at
= 1.7 A
I
= 0.3 A
D
I
= 0.3 A
D
I
= 0.3 A
D
I
= 0.3 A
D
T
= 25˚C, unless otherwise specified
j
g
fs
C
iss
C
oss
C
rss
t
d(on)
t
r
t
d(off)
t
f
min. typ. max.
2 3.7 -
- 415 520
- 80 100
- 50 65
-
20 30
- 35 55
- 110 165
- 50 75
S
pF
ns
Rev 1.1 3 2005-11-23
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