INFINEON BSP318S User Manual

Final data

SIPMOS Small-Signal-Transistor

BSP318S

Features

• N-Channel

• Enhancement mode

• Avalanche rated

Product Summary

Drain source voltage V
Drain-Source on-state resistance
Continuous drain current A

V

DS

R

DS(on)

I

D

60

0.09

2.6

Ω

• Logic Level

• dv/dt rated

Type Package Ordering Code

BSP318S SOT-223 Q67000-S4002

Maximum Ratings,at

T

= 25 °C, unless otherwise specified

j

Pin 1 Pin 2, 4 PIN 3

G D S

4

2

1

VPS05163

Parameter Symbol Value Unit

Continuous drain current 2.6 A
Pulsed drain current

T

= 25 °C

A

I

D

I

D puls

10.4

3

Avalanche energy, single pulse

I

= 2.6 A,

D

V

DD

= 25 V,

R

= 25 Ω

GS

Avalanche current,periodic limited by
Avalanche energy, periodic limited by

Reverse diode dv/dt

I

= 2.6 A,

S

T

= 150 °C

jmax

V

= 20 V, di/dt = 200 A/µs,

DS

Gate source voltage
Power dissipation

T

= 25 °C

A

Operating and storage temperature

T

T

jmax

jmax

E

I
E

V
P

T

AS

AR

AR

GS
tot

j

t

,

T

stg

60 mJ

2.6

0.18 mJ
6

±20

1.8

-55... +150 °C

IEC climatic category; DIN IEC 68-1 55/150/56

A

kV/µsdv/d

V
W

Page 1

1999-10-28

Final data

Thermal Characteristics
Parameter Symbol UnitValues

typ. max.min.

Characteristics

BSP318S

Thermal resistance, junction - soldering point

R

thJS

- 17

K/W-

(Pin 4)
SMD version, device on PCB:

@ min. footprint
@ 6 cm2 cooling area

1)

Electrical Characteristics, at

T

= 25 °C, unless otherwise specified

j

R

thJA

-

-

100

-

-

70

Parameter ValuesSymbol Unit

max.typ.min.

Static Characteristics

Drain- source breakdown voltage

V

= 0 V,

GS

Gate threshold voltage,

I

= 20 µA

D

I

= 0.25 mA

D

V

GS

=

V

DS

V

(BR)DSS

V

GS(th)

60 - V-

1.2 1.6

2

Zero gate voltage drain current

V
V

DS
DS

= 60 V,
= 60 V,

V
V

= 0 V,

GS

= 0 V,

GS

T

= 25 °C

j

T

= 150 °C

j

Gate-source leakage current

V

V

GS

GS

= 20 V,

= 4.5 V,

V

DS

I

= 2.6 A

D

= 0 V

Drain-Source on-state resistance

V

= 10 V,

GS

1

Device on 50mm*50mm*1.5mm epoxy PCB FR4 with 6cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

= 2.6 A

D

Page 2

I

DSS

I

GSS

R

DS(on)

R

DS(on)

-

-

- 0.12Drain-Source on-state resistance

- 0.07 0.09

0.1

-

10 nA100-

µA

1

100

0.15

Ω

1999-10-28

Final data

BSP318S

Electrical Characteristics, at

T

= 25 °C, unless otherwise specified

j

Parameter Symbol Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance

V

≥2*

I

*

DS

R

D

DS(on)max

,

I

= 2.6 A

D

Input capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Output capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Reverse transfer capacitance

V

= 0 V,

GS

V

= 25 V, f = 1 MHz

DS

Turn-on delay time

V
R

DD

G

= 30 V,

= 16 Ω

V

GS

= 4.5 V,

I

= 2.6 A,

D

g

fs

C

iss

C

oss

C

rss

t

d(on)

2.4 S-5.5

- 380 pF300

- 90 120

6550-

12 ns20-

Rise time

V
R

DD

G

= 30 V,

= 16 Ω

V

GS

= 4.5 V,

Turn-off delay time

V
R

DD

G

= 30 V,

= 16 Ω

V

GS

= 4.5 V,

Fall time

V
R

DD

G

= 30 V,

= 16 Ω

V

GS

= 4.5 V,

I

= 2.6 A,

D

I

= 2.6 A,

D

I

= 2.6 A,

D

t

r

t

d(off)

t

f

- 15 25

-

20 30

- 15 25

Page 3

1999-10-28