INFINEON BSP 317 P User Manual

BSP 317 P

SIPMOS

Feature

• P-Channel

• Enhancement mode

• Logic Level



Small-Signal-Transistor

Product Summary

V

DS

R

DS(on)

I

D

• dv/dt rated

Drain
pin 2/4

Gate
pin1

Source
pin 3

Type Package

BSP 317 P

P-SOT-223

PG-SOT-223

Tape and Reel Information

E6327

L6327

Marking

BSP317P

BSP317PBSP 317 P

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

-250 V
4 Ω

-0.43 A

PG-SOT-223

4

1

3

2

VPS05163

Parameter

Continuous drain current

TA=25°C

=70°C

T

A

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=-0.43A, VDS=-200V, di/dt=-200A/µs, T

jmax

=150°C

Symbol

I

I

dv/dt

Gate source voltage V

Power dissipation

TA=25°C

P

Operating and storage temperature T

IEC climatic category; DIN IEC 68-1

D

D puls

GS

tot

,

T

j

stg

Value

-0.43

-0.34

-1.72

6 kV/µs

±20

1.8 W

-55... +150

55/150/56

Unit

A

V

°C

Rev.1.3 Page 1

2005-11-23

BSP 317 P

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point

R

thJS

- 15 25 K/W
(Pin 4)
SMD version, device on PCB:

@ min. footprint
@ 6 cm

2

cooling area

1)

R

thJA

-

-

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter

Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=-250µA

Gate threshold voltage, VGS = V

=-370µA

I

D

Zero gate voltage drain current

DS

V

(BR)DSS

V

GS(th)

I

DSS

-250 - - V

-1 -1.5 -2

80
48

115

70

µA

VDS=-250V, VGS=0, Tj=25°C

=-250V, VGS=0, Tj=150°C

V

DS

Gate-source leakage current

VGS=-20V, VDS=0

Drain-source on-state resistance

VGS=-4.5V, ID=-0.39A

Drain-source on-state resistance

VGS=-10V, ID=-0.43A

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

GSS

R

DS(on)

R

DS(on)

-

-

-0.1

-10

-0.2

-100

- -10 -100 nA

- 3.3 5

Ω

- 3 4

Rev.1.3 Page 2

2005-11-23

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

BSP 317 P

Parameter

Symbol Conditions Values Unit

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C

Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge

Q

Gate to drain charge Q
Gate charge total Q

fs

iss
oss

rss
d(on)
r
d(off)
f

gs
gd
g

min. typ. max.

|VDS|≥2*|ID|*R
I

=-0.34A

D

VGS=0, VDS=-25V,
f=1MHz

DS(on)max

,

0.38 0.76 - S

- 210 262 pF

- 30 37

- 13.4 16.7

VDD=-30V, VGS=-10V,

=-0.43A, RG=6Ω

I

D

- 5.7 8.5 ns

- 11.1 16.6

- 254 381

- 67 100

VDD=-200V, ID=-0.43A - -0.5 -0.65 nC

- -4 -5.2

VDD=-200V, ID=-0.43A,

=0 to -10V

V

GS

- -11.6 -15.1

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inv. diode direct current, pulsedI

Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q

(plateau)

S

SM

SD
rr

rr

VDD=-200V, ID=-0.43A - -2.8 - V

TA=25°C - - -0.43 A

- - -1.72

VGS=0, IF=-0.43A - -0.84 -1.2 V
VR=-125V, I

di

/dt=100A/µs

F

lS,

=

F

- 92 138 ns

- 210 315 nC

Rev.1.3 Page 3

2005-11-23