INFINEON BSP 300 User Manual
BSP 300
SIPMOS
®
Small-Signal Transistor
• N channel
• Enhancement mode
• Avalanche rated
• V
•
Type
BSP 300 800 V 0.19 A 20
Type RoHS compliant Tape and Reel Information
BSP 300
BSP 300
= 2.0... 4.0 V
GS(th)
Pb-free lead plating; RoHS compliant available
V
DS
Yes
Yes
I
D
R
L6433
L6433
DS(on)
Ω
Package Marking
PG-SOT-223 BSP 300
Pin 1 Pin 2 Pin 3 Pin 4
G D S D
Maximum Ratings
Parameter Symbol Values Unit
Continuous drain current
T
= 25 °C
A
DC drain current, pulsed
T
= 25 °C
A
Avalanche energy, single pulse
I
= 0.8 A, VDD = 50 V, RGS = 25
D
L = 105 mH, T
= 25 °C
j
Ω
Gate source voltage V
Power dissipation
T
= 25 °C
A
I
D
I
Dpuls
E
AS
GS
P
tot
0.19
0.76
36
±
20 V
1.8
A
mJ
W
Rev 1.0 Page 1 2005-10-27
BSP 300
Maximum Ratings
Parameter Symbol Values Unit
Chip or operating temperature T
Storage temperature T
Thermal resistance, chip to ambient air
Thermal resistance, junction-soldering point
1)
1)
R
R
j
stg
thJA
thJS
-55 ... + 150 °C
-55 ... + 150
≤
70 K/W
≤
14
DIN humidity category, DIN 40 040 E
IEC climatic category, DIN IEC 68-1 55 / 150 / 56
1) Transistor on epoxy pcb 40 mm x 40 mm x 1,5 mm with 6 cm2 copper area for drain connection
Electrical Characteristics,
at Tj = 25°C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain- source breakdown voltage
V
= 0 V, ID = 0.25 mA, Tj = 25 °C
GS
Gate threshold voltage
V
GS=VDS, ID
= 1 mA
Zero gate voltage drain current
V
= 800 V, VGS = 0 V, Tj = 25 °C
DS
V
= 800 V, VGS = 0 V, Tj = 125 °C
DS
Gate-source leakage current
V
= 20 V, VDS = 0 V
GS
Drain-Source on-state resistance
V
= 10 V, ID = 0.19 A
GS
V
(BR)DSS
V
GS(th)
I
DSS
I
GSS
R
DS(on)
800 - -
2 3 4
-
-
0.1
10
1
100
- 10 100
- 15 20
V
µA
nA
Ω
Rev 1.0 Page 2 2005-10-27
BSP 300
Electrical Characteristics,
Parameter Symbol Values Unit
Dynamic Characteristics
Transconductance
V
≥
2
DS
* ID * RDS(on)max, ID
Input capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Output capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Reverse transfer capacitance
V
= 0 V, VDS = 25 V, f = 1 MHz
GS
Turn-on delay time
V
= 30 V, VGS = 10 V, ID = 0.25 A
DD
R
= 50
GS
Ω
Rise time
V
= 30 V, VGS = 10 V, ID = 0.25 A
DD
R
= 50
GS
Ω
Turn-off delay time
V
= 30 V, VGS = 10 V, ID = 0.25 A
DD
R
= 50
GS
Ω
Fall time
V
= 30 V, VGS = 10 V, ID = 0.25 A
DD
R
= 50
GS
Ω
at Tj = 25°C, unless otherwise specified
min. typ. max.
g
fs
= 0.19 A
C
iss
0.06 0.27 -
- 170 230
C
oss
- 20 30
C
rss
- 10 15
t
d(on)
- 7 11
t
r
- 16 24
t
d(off)
- 27 36
t
f
- 21 28
S
pF
ns
Rev 1.0 Page 3 2005-10-27
Loading...