INFINEON BSP297 User Manual
Rev. 1.21
)
j
g
BSP297
SIPMOSÒ Small-Signal-Transistor
Feature
· N-Channel
· Enhancement mode
· Logic Level
· dv/dt rated
Pb-free lead plating; RoHS compliant
•
Type
BSP297
BSP297
Package
P-SOT-223
PG-SOT-223
Tape and Reel Information
E6327: 1000 pcs/reel
L6327: 1000 pcs/reel
Marking
BSP297
BSP297
Maximum Ratings, at Tj = 25 °C, unless otherwise specified
Product Summary
V
DS
R
DS(on
I
D
200 V
1.8 W
0.66 A
PG-SOT-223
4
1
3
2
VPS05163
Parameter
Continuous drain current
TA=25°C
T
=70°C
A
Pulsed drain current
TA=25°C
Reverse diode dv/dt
IS=0.66A, VDS=160V, di/dt=200A/µs, T
jmax
=150°C
Gate source voltage V
Symbol Value Unit
I
D
0.66
0.53
I
D puls
dv/dt
GS
2.64
6 kV/µs
±20
ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation
TA=25°C
Operating and storage temperature T
P
tot
T
,
st
1.8 W
-55... +150
IEC climatic category; DIN IEC 68-1 55/150/56
A
V
°C
Page 1
2006-09-28
Rev. 1.21
BSP297
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point
R
thJS
- 15 25 K/W
(Pin 4)
SMD version, device on PCB:
@ min. footprint
@ 6 cm
2
cooling area
1)
R
thJA
-
-
80
48
115
70
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0, ID=250µA
Gate threshold voltage, VGS = V
I
=400µA
D
Zero gate voltage drain current
VDS=200V, VGS=0, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
200 - - V
0.8 1.4 1.8
-
-
0.1
µA
V
=200V, VGS=0, Tj=150°C
DS
Gate-source leakage current
VGS=20V, VDS=0
Drain-source on-state resistance
VGS=4.5V, ID=0.53A
Drain-source on-state resistance
VGS=10V, ID=0.66A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
Page 2
I
GSS
R
DS(on)
R
DS(on)
-
10
100
- 1 10 nA
- 1.2 3
- 1 1.8
2006-09-28
W
Rev. 1.21
)
)
f
g
g
(p
)
BSP297
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
Gate plateau voltage V
fs
iss
oss
rss
d(on
r
d(off
g
s
d
lateau
VDS³2*ID*R
I
=0.53A
D
VGS=0, VDS=25V,
f=1MHz
DS(on)max
,
0.47 0.94 - S
- 286 357 pF
- 38 47
- 15.7 23.5
VDD=100V, VGS=4.5V,
I
=0.6A, RG=15W
D
- 5.2 7.8 ns
- 3.8 5.7
- 49 74
- 19 29
VDD=160V, ID=0.66A - 0.7 0.9 nC
- 5.2 7.8
VDD=160V, ID=0.66A,
V
=0 to 10V
GS
VDD=160V, ID = 0.66 A - 2.7 3.3 V
- 12.9 16.1
Reverse Diode
Inverse diode continuous
I
forward current
Inv. diode direct current, pulsedI
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
S
SM
SD
rr
rr
TA=25°C - - 0.66 A
- - 2.64
VGS=0, IF = I
VR=100V, I
di
/dt=100A/µs
F
Page 3
F
S
=
lS,
- 0.84 1.2 V
- 52 78 ns
- 80 120 nC
2006-09-28
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