INFINEON BSP295 User Manual

Rev 1.2

DS(on)

D

BSP295

SIPMOS Small-Signal-Transistor

Feature

·

N-Channel

·

Enhancement mode

·

dv/dt rated

Pb-free lead plating; RoHS compliant

•

Type

BSP295
BSP295

Package

P-SOT-223
PG-SOT-223

Maximum Ratings, at Tj = 25 °C, unless otherwise specified

Tape and Reel Information

E6327
L6327

Product Summary

V

DS

R
I

Marking

BSP295
BSP295

60 V

0.3

1.8 A

PG-SOT-223

4

1

W

3

2

VPS05163

Parameter

Continuous drain current

TA=25°C
T

=70°C

A

Pulsed drain current

TA=25°C

Reverse diode dv/dt

IS=1.8A, VDS=40V, di/dt=200A/µs, T

jmax

=150°C

Gate source voltage V

Symbol Value Unit

I

D

1.8

1.44

I

D puls

7.2

dv/dt 6 kV/µs

GS

±20

ESD Sensitivity (HBM) as per MIL-STD 883 Class 1
Power dissipation

TA=25°C

Operating and storage temperature T

P

tot

j

1.8 W

,

T

stg

-55... +150

IEC climatic category; DIN IEC 68-1 55/150/56

A

V

°C

Page 1

2006-05-15

Thermal Characteristics

thJS

Rev 1.2

BSP295

Parameter

Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point R
SMD version, device on PCB:

@ min. footprint
@ 6 cm

2

cooling area

1)

R

thJA

- 15 25 K/W

-

-

80
48

115

70

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0, ID=250µA

Gate threshold voltage, VGS = V

=400µA

I

D

Zero gate voltage drain current

VDS=60V, VGS=0, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

60 - - V

0.8 1.1 1.8

-

-

0.1

µA

V

=60V, VGS=0, Tj=150°C

DS

Gate-source leakage current

VGS=20V, VDS=0

Drain-source on-state resistance

VGS=10V, ID=1.8A
V

=4.5V, ID=1.8A

GS

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

GSS

R

DS(on)

-

8

50

- 1 10 nA

-

-

0.22

0.39

0.3

0.5

W

Page 2

2006-05-15

Rev 1.2

(plateau)

Inv. diode direct current, pulsed

SD

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified

BSP295

Parameter

Symbol Conditions Values Unit

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

fs

iss
oss

rss
d(on)
r
d(off)
f

gs
gd
g

min. typ. max.

V

³

2*ID*R

DS

I

=1.44A

D

VGS=0, VDS=25V,
f=1MHz

DS(on)max

,

0.8 1.7 - S

- 295 368 pF

- 95 118

- 45 67

VDD=15V, VGS=4.5V,
I

=1.44 A, RG=15

D

W

- 5.4 8.1 ns

- 9.9 15

- 27 41

- 19 28

VDD=24V, ID=1.8A - 0.9 1.1 nC

- 5.6 8.4

VDD=24V, ID=1.8A,
V

=0 to 10V

GS

- 14 17

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current

I

Inverse diode forward voltage V
Reverse recovery time t

Reverse recovery charge Q

S

SM

rr

rr

VDD=24V, ID = 1.8 A - 3.1 3.8 V

TA=25°C - - 1.8 A

- - 7.2

VGS=0, IF = I
VR=25V, I

di

/dt=100A/µs

F

F=lS

S

,

- 0.84 1.3 V

- 36 45 ns

- 38 48 nC

Page 3

2006-05-15