INFINEON BSP171P User Manual

BSP171P

SIPMOS® Small-Signal-Transistor

Features

• P-Channel

• Enhancement mode

• Logic level

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Product Summary

V

DS

R

DS(on),max

I

D

-60 V

0.3

-1.9 A

PG-SOT-223

Ω

Type Package Tape and Reel Information Marking

BSP 171 P PG-SOT-223 L6327: 1000 pcs/reel 171P

Maximum ratings, at T

Parameter Symbol Conditions Unit

=25 °C, unless otherwise specified

j

Value

steady state

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

I

D

I

D,pulse

E

AS

Reverse diode dv /dt dv /dt

Gate source voltage

Power dissipation

V

GS

P

tot

TA=25 °C

T

=70 °C

A

TA=25 °C

ID=-1.9 A, R

=-1.9 A,

I

D

V

DS

di /dt =-200 A/µs,

T

j,max

TA=25 °C

1)

1)

=-48 V,

=150 °C

1)

=25 Ω

GS

-1.9

-1.5

-7.6

70

-6

±20

1.8

A

mJ

kV/µs

V

W

Operating and storage temperature

IEC climatic category; DIN IEC 68-1

T

j

stg

-55 ... 150

55/150/56

°C

, T

Rev 2.4 page 1 2007

-02-08

BSP171P

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance, junction - soldering point

Thermal resistance, junction - ambient

Electrical characteristics, at T

R

thJS

R

thJA

minimal footprint, steady state

2

cooling area1),

6 cm steady state

=25 °C, unless otherwise specified

j

- - 25 K/W

- - 110

--70

Static characteristics

Drain-source breakdown voltage

V

(BR)DSSVGS

=0 V, ID=-250 µA

-60 - - V

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Transconductance

1)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

V

I

I

R

g

DSS

GSS

GS(th)

DS(on)

fs

VDS=VGS, I

=-460 µA

D

VDS=-60 V, VGS=0 V, T

=25 °C

j

=-60 V, VGS=0 V,

V

DS

T

=125 °C

j

VGS=-20 V, VDS=0 V

VGS=-4.5 V, I

=-1.5 A

D

V

=-10 V,

GS

I

=-1.9 A

D

|VDS|>2|ID|R

I

=-1.5 A

D

DS(on)max

-1 -1.5 -2

- -0.1 -1 µA

- -10 -100

- -10 -100 nA

- 0.3 0.45

- 0.21 0.3

,

1.4 2.7 - S

Ω

Rev 2.4 page 2 2007-02-08

BSP171P

y

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

namic characteristics

D

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate to drain charge

Gate charge total

C

iss

=0 V,

V

C

oss

C

rss

t

d(on)

t

r

t

d(off)

t

f

2)

Q

gs

Q

gd

Q

g

GS

=-25 V, f =1 MHz

V

DS

V

=-25 V,

DD

V

=-10 V,

GS

I

=-1.9 A, R

D

=-48 V, ID=1.9 A,

V

DD

V

=0 to -10 V

GS

=6 Ω

G

- 365 460 pF

- 105 135

-4055

-68ns

-2533

- 208 276

- 87 130

- -1.2 -1.6 nC

--5-7

- -13 -20

Gate plateau voltage

Output charge

V

Q

plateau

oss

Reverse Diode

Diode continuous forward current

Diode pulse current

Diode forward voltage

Reverse recovery time

Reverse recovery charge

2)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

t

rr

Q

rr

VDD=-15 V, VGS=0 V

TA=25 °C

VGS=0 V, IF=1.9 A, T

=25 °C

j

V

=-30 V, IF=|IS|,

R

di

/dt =100 A/µs

F

--3-V

--5-7

- - -1.9 A

- - -7.6

- -0.84 -1.1 V

- 80 120 ns

- -125 -190 nC

Rev 2.4 page 3 2007-02-08

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