INFINEON BSP135 User Manual
BSP135
SIPMOS® Small-Signal-Transistor
Features
• N-channel
• Depletion mode
• dv /dt rated
Product Summary
V
DS
R
DS(on),max
I
DSS,min
SOT-223
600 V
60
0.02 A
Ω
Type Package Ordering Code Tape and Reel Information Marking
BSP135 SOT-223 Q62702-S655 E6327: 1000 pcs/reel BSP135
Maximum ratings, at T
Parameter Symbol Conditions Unit
Continuous drain current
Pulsed drain current
Reverse diode dv /dt dv /dt
Gate source voltage
ESD sensitivity (HBM) as per
MIL-STD 883
Power dissipation
=25 °C, unless otherwise specified
j
I
D
I
D,pulse
TA=25 °C
T
=70 °C
A
TA=25 °C
=0.12 A, VDS=20 V,
I
D
di /dt =200 A/µs,
T
=150 °C
j,max
V
GS
P
tot
TA=25 °C
Value
0.12 A
0.10
0.48
6 kV/µs
±20 V
Class 1
1.8 W
T
Operating and storage temperature
, T
j
stg
-55 ... 150 °C
IEC climatic category; DIN IEC 68-1 55/150/56
Rev. 1.0 page 1 2003-04-03
BSP135
Parameter Symbol Conditions Unit
Values
min. typ. max.
Thermal characteristics
Thermal resistance,
junction - soldering point (pin 4)
SMD version, device on PCB
Electrical characteristics, at T
R
thJS
R
thJA
=25 °C, unless otherwise specified
j
minimal footprint - - 115
2
cooling area
6 cm
- - 25 K/W
1)
--70
Static characteristics
Drain-source breakdown voltage
Gate threshold voltage
Drain-source cutoff current
V
(BR)DSSVGS
V
GS(th)
I
D(off)
=-3 V, ID=250 µA
VDS=3 V, ID=94 µA
VDS=600 V,
V
=-3 V, Tj=25 °C
GS
600 - - V
-2.1 -1.4 -1
- - 0.1 µA
=600 V,
V
DS
V
=-3 V, Tj=125 °C
GS
Gate-source leakage current
On-state drain current
Drain-source on-state resistance
Transconductance
1)
Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (single layer, 70 µm thick) copper area for drain
connection. PCB is vertical in still air.
I
I
R
g
GSS
DSS
DS(on)
fs
VGS=20 V, VDS=0 V
VGS=0 V, VDS=10 V
VGS=0 V, ID=0.01A
V
=10 V, ID=0.12 A
GS
|VDS|>2|ID|R
I
=0.1 A
D
DS(on)max
,
--10
- - 100 nA
20 - - mA
-3060
-2545
0.08 0.16 - S
Ω
Rev. 1.0 page 2 2003-04-03
BSP135
y
Parameter Symbol Conditions Unit
Values
min. typ. max.
namic characteristics
D
Input capacitance
Output capacitance
Reverse transfer capacitance
Turn-on delay time
Rise time
Turn-off delay time
Fall time
C
C
C
t
t
t
t
iss
oss
rss
d(on)
r
d(off)
f
V
=-3 V, VDS=25 V,
GS
f =1 MHz
V
=300 V,
DD
V
=-3...5 V,
GS
I
=0.1 A, R
D
=6 Ω
G
- 98 146 pF
- 8.5 13
- 3.4 5.1
- 5.4 8.1 ns
- 5.6 8.4
-2842
- 182 273
Gate Charge Characteristics
Gate to source charge
Gate to drain charge
Gate charge total
Q
gs
Q
gd
Q
g
V
=400 V, ID=0.1 A,
DD
V
=-3 to 5 V
GS
- 0.24 0.36 nC
- 2.0 3.0
- 3.7 4.9
Gate plateau voltage
Reverse Diode
Diode continous forward current
Diode pulse current
Diode forward voltage
Reverse recovery time
Reverse recovery charge
V
plateau
I
S
I
S,pulse
V
SD
t
rr
Q
rr
=25 °C
T
A
VGS=-3 V, IF=0.12 A,
T
=25 °C
j
=300 V, IF=0.1 A,
V
R
di
/dt =100 A/µs
F
- 0.20 - V
- - 0.12 A
- - 0.48
- 0.78 1.2 V
- 87 130 ns
- 70 104 nC
Rev. 1.0 page 3 2003-04-03
Loading...