INFINEON BSO4420 User Manual

Preliminary data

)

)

)

j

g

BSO4420

OptiMOS

â

Small-Signal-Transistor

Feature

• N-Channel

• Logic Level

• Very low on-resistance R

• Excellent Gate Charge x R

DS(on

DS(on

product (FOM)

• Avalanche rated

• dv/dt rated

• Ideal for fast switching applications

Type Package Ordering Code

BSO4420 SO 8 Q67042-S4027

Marking

4420

Maximum Ratings,at Tj = 25 °C, unless otherwise specified

Product Summary

V

DS

R

DS(on

I

D

30 V

7.8 mΩ
13 A

Parameter Symbol Value Unit

Continuous drain current

TA=25°C

Pulsed drain current

TA=25°C

Avalanche energy, single pulse

ID=13 A , VDD=25V, RGS=25Ω

Reverse diode dv/dt

IS=13A, VDS=24V, di/dt=200A/µs, T

jmax

=150°C

I

I

E

dv/dt

Gate source voltage V
Power dissipation

T

=25°C

A

P

Operating and storage temperature T

D

D puls

AS

GS
tot

T

,

st

13 A

52

230 mJ

6 kV/µs

±20

2.5 W

-55... +150

V

°C

IEC climatic category; DIN IEC 68-1 55/150/56

Page 1

2002-02-11

Preliminary data

BSO4420

Thermal Characteristics
Parameter Symbol Values Unit

min. typ. max.

Characteristics

Thermal resistance, junction - soldering point R
SMD version, device on PCB:

@ min. footprint; t ≤ 10 sec.
@ 6 cm

2

cooling area 1); t ≤ 10 sec.

R

thJS
thJA

- - 30 K/W

-

-

-

-

110

50

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit

min. typ. max.

Static Characteristics

Drain-source breakdown voltage

VGS=0V, ID=1mA

Gate threshold voltage, VGS = V

I

=80µA

D

Zero gate voltage drain current

VDS=30V, VGS=0V, Tj=25°C

DS

V

(BR)DSS

V

GS(th)

I

DSS

30 - - V

1.2 1.6 2

-

0.01

1

µA

V

=30V, VGS=0V, Tj=125°C

DS

Gate-source leakage current

VGS=20V, VDS=0V

Drain-source on-state resistance

VGS=4.5V, ID=11A

Drain-source on-state resistance

VGS=10V, ID=13A

1

Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical without blown air.

I

GSS

R

DS(on)

R

DS(on)

-

10

100

- 1 100 nA

- 9.3 10.9

mΩ

- 6.7 7.8

Page 2

2002-02-11

Preliminary data

)

)

g

g

(p

)

BSO4420

Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit

min. typ. max.

Dynamic Characteristics

Transconductance g

Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t

Gate Charge Characteristics

Gate to source charge Q
Gate to drain charge Q
Gate charge total Q

fs

iss
oss
rss

G
d(on
r
d(off
f

s
d

g

VDS≥2*ID*R
I

=11.6A

D

VGS=0, VDS=25V,
f=1MHz

DS(on)max

,

13.7 27.4 - S

- 1770 2213 pF

- 740 925

- 165 206

- 1.3 - Ω

VDD=15V, VGS=10V,
I

=11A, RG=2.2Ω

D

- 9 13.5 ns

- 44 66

- 10 15

- 32 48

VDD=15V, ID=13A - 4.9 6.1 nC

- 12.8 16

VDD=15V, ID=13A,
V

=0 to 5V

GS

- 27 33.7

Output charge Q

Gate plateau voltage V

Reverse Diode

Inverse diode continuous

I

forward current
Inverse diode direct current,

I

pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q

oss

S

SM

SD
rr

rr

lateau

VDS=15V, ID=13A,
V

=0

GS

VDD=15V, ID=13A - 2.7 - V

TA=25°C - - 3.6 A

- 25 -

- - 52

VGS=0, |IS|=|IF| - 0.85 1.13 V
VR=15V, I

di

/dt=100A/µs

F

Page 3

lS,

=

F

- 32 48 ns

- 43.6 70 nC

2002-02-11