Preliminary data
)
)
)
j
g
BSO4420
OptiMOS
â
Small-Signal-Transistor
Feature
• N-Channel
• Logic Level
• Very low on-resistance R
• Excellent Gate Charge x R
DS(on
DS(on
product (FOM)
• Avalanche rated
• dv/dt rated
• Ideal for fast switching applications
Type Package Ordering Code
BSO4420 SO 8 Q67042-S4027
Marking
4420
Maximum Ratings,at Tj = 25 °C, unless otherwise specified
Product Summary
V
DS
R
DS(on
I
D
30 V
7.8 mΩ
13 A
Parameter Symbol Value Unit
Continuous drain current
TA=25°C
Pulsed drain current
TA=25°C
Avalanche energy, single pulse
ID=13 A , VDD=25V, RGS=25Ω
Reverse diode dv/dt
IS=13A, VDS=24V, di/dt=200A/µs, T
jmax
=150°C
I
I
E
dv/dt
Gate source voltage V
Power dissipation
T
=25°C
A
P
Operating and storage temperature T
D
D puls
AS
GS
tot
T
,
st
13 A
52
230 mJ
6 kV/µs
±20
2.5 W
-55... +150
V
°C
IEC climatic category; DIN IEC 68-1 55/150/56
Page 1
2002-02-11
Preliminary data
BSO4420
Thermal Characteristics
Parameter Symbol Values Unit
min. typ. max.
Characteristics
Thermal resistance, junction - soldering point R
SMD version, device on PCB:
@ min. footprint; t ≤ 10 sec.
@ 6 cm
2
cooling area 1); t ≤ 10 sec.
R
thJS
thJA
- - 30 K/W
-
-
-
-
110
50
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Values Unit
min. typ. max.
Static Characteristics
Drain-source breakdown voltage
VGS=0V, ID=1mA
Gate threshold voltage, VGS = V
I
=80µA
D
Zero gate voltage drain current
VDS=30V, VGS=0V, Tj=25°C
DS
V
(BR)DSS
V
GS(th)
I
DSS
30 - - V
1.2 1.6 2
-
0.01
1
µA
V
=30V, VGS=0V, Tj=125°C
DS
Gate-source leakage current
VGS=20V, VDS=0V
Drain-source on-state resistance
VGS=4.5V, ID=11A
Drain-source on-state resistance
VGS=10V, ID=13A
1
Device on 40mm*40mm*1.5mm epoxy PCB FR4 with 6cm² (one layer, 70 µm thick) copper area for drain
connection. PCB is vertical without blown air.
I
GSS
R
DS(on)
R
DS(on)
-
10
100
- 1 100 nA
- 9.3 10.9
mΩ
- 6.7 7.8
Page 2
2002-02-11
Preliminary data
)
)
g
g
(p
)
BSO4420
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter Symbol Conditions Values Unit
min. typ. max.
Dynamic Characteristics
Transconductance g
Input capacitance C
Output capacitance C
Reverse transfer capacitance C
Gate resistance R
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Gate Charge Characteristics
Gate to source charge Q
Gate to drain charge Q
Gate charge total Q
fs
iss
oss
rss
G
d(on
r
d(off
f
s
d
g
VDS≥2*ID*R
I
=11.6A
D
VGS=0, VDS=25V,
f=1MHz
DS(on)max
,
13.7 27.4 - S
- 1770 2213 pF
- 740 925
- 165 206
- 1.3 - Ω
VDD=15V, VGS=10V,
I
=11A, RG=2.2Ω
D
- 9 13.5 ns
- 44 66
- 10 15
- 32 48
VDD=15V, ID=13A - 4.9 6.1 nC
- 12.8 16
VDD=15V, ID=13A,
V
=0 to 5V
GS
- 27 33.7
Output charge Q
Gate plateau voltage V
Reverse Diode
Inverse diode continuous
I
forward current
Inverse diode direct current,
I
pulsed
Inverse diode forward voltage V
Reverse recovery time t
Reverse recovery charge Q
oss
S
SM
SD
rr
rr
lateau
VDS=15V, ID=13A,
V
=0
GS
VDD=15V, ID=13A - 2.7 - V
TA=25°C - - 3.6 A
- 25 -
- - 52
VGS=0, |IS|=|IF| - 0.85 1.13 V
VR=15V, I
di
/dt=100A/µs
F
Page 3
lS,
=
F
- 32 48 ns
- 43.6 70 nC
2002-02-11
Preliminary data
V
D
BSO4420
1 Power dissipation
P
= f (TA)
tot
BSO4420
2.8
W
2.4
2.2
2
tot
1.8
P
1.6
1.4
1.2
1
0.8
0.6
0.4
0.2
0
0 20 40 60 80 100 120
°C
2 Drain current
ID = f (TA)
parameter: VGS≥ 10 V
BSO4420
14
A
12
11
10
9
D
I
8
7
6
5
4
3
2
1
160
T
A
0
0 20 40 60 80 100 120
°C
160
T
A
3 Safe operating area
ID = f ( VDS )
parameter : D = 0 , TA = 25 °C
2
BSO4420
10
A
1
10
D
I
0
10
-1
10
-2
10
-1
10
=
)
n
o
(
S
D
R
0
10
10
DC
1
tp = 230.0µs
1 ms
10 ms
V
V
DS
10
4 Transient thermal impedance
Z
= f (tp)
thJS
parameter : D = tp/T
BSO4420
2
10
K/W
1
10
0
10
thJS
Z
-1
10
-2
10
-3
-4
10
single pulse
-6
10
-5
-4
10
-3
10
10
2
10
10
D = 0.50
0.20
0.10
0.05
0.02
0.01
-2
-1
10
10
0
t
2
10
s
p
Page 4
2002-02-11
Preliminary data
BSO4420
5 Typ. output characteristic
ID = f (VDS); Tj=25°C
parameter: tp = 80 µs
BSO4420
32
P
= 2.5W
tot
A
e
f
h
g
24
D
20
I
16
12
8
4
0
0 0.5 1 1.5 2 2.5 3 3.5 4
VGS [V]
d
c
b
a
a 2.5
b 3.0
c 3.5
d 4.0
e 4.5
f 5.0
g 6.0
h 10.0
V
V
DS
6 Typ. drain-source on resistance
R
DS(on)
parameter: V
R
5
= f (ID)
GS
BSO4420
0.03
Ω
0.024
0.022
0.02
DS(on)
0.018
0.016
0.014
0.012
0.01
0.008
0.006
0.004
0.002
b
V
[V] =
GS
b
c
3.5
4.0
d
3.0
0
0 4 8 12 16 20
4.5
c
e
f
g
5.0
6.0
h
10.0
d
e
f
g
h
26
A
I
D
7 Typ. transfer characteristics
ID= f ( VGS ); VDS≥ 2 x ID x R
DS(on)max
parameter: tp = 80 µs
60
A
40
D
I
30
20
10
0
0 0.5 1 1.5 2 2.5 3 3.5 4
V
V
GS
8 Typ. forward transconductance
gfs = f(ID); Tj=25°C
parameter: g
50
S
40
35
fs
g
30
25
20
15
10
5
5
0
0 10 20 30 40 50
fs
70
A
I
D
Page 5
2002-02-11
Preliminary data
BSO4420
9 Drain-source on-state resistance
R
DS(on)
= f (Tj)
parameter : ID = 13 A, VGS = 10 V
BSO4420
0.016
Ω
0.012
DS(on)
0.01
R
98%
0.008
0.006
0.004
0.002
0
-60 -20 20 60 100
typ
°C
10 Typ. gate threshold voltage
V
parameter: VGS = V
180
T
j
= f (Tj)
GS(th)
DS
2.5
max.
V
typ.
GS(th)
V
1.5
1
0.5
0
-60 -20 20 60 100
min.
°C
T
160
j
11 Typ. capacitances
C = f (VDS)
parameter: VGS=0V, f=1 MHz
4
10
pF
C
iss
C
C
3
10
2
10
0 5 10 15 20
oss
C
rss
V
V
DS
30
12 Forward character. of reverse diode
IF = f (VSD)
parameter: Tj , tp = 80 µs
2
BSO4420
10
A
1
10
F
I
0
10
T
= 25 °C typ
j
T
= 150 °C typ
j
T
= 25 °C (98%)
j
T
= 150 °C (98%)
j
-1
10
0 0.4 0.8 1.2 1.6 2 2.4
V
V
SD
3
Page 6
2002-02-11
Preliminary data
BSO4420
13 Typ. avalanche energy
EAS = f (Tj)
par.: ID = 13 A , VDD = 25 V, RGS = 25 Ω
240
mJ
200
180
160
AS
E
140
120
100
80
60
40
20
0
25 50 75 100
°C
T
j
150
14 Typ. gate charge
V
GS
= f (Q
Gate
)
parameter: ID = 13 A pulsed
BSO4420
16
V
12
GS
10
V
0.2 V
DS max
8
0.5 V
DS max
6
0.8 V
DS max
4
2
0
0 10 20 30 40 50
nC
Q
70
Gate
15 Drain-source breakdown voltage
V
(BR)DSS
= f (Tj)
parameter: ID=10 mA
BSO4420
36
V
34
33
(BR)DSS
V
32
31
30
29
28
27
-60 -20 20 60 100
°C
180
T
j
Page 7
2002-02-11
Preliminary data
Published by
Infineon Technologies AG,
Bereichs Kommunikation
St.-Martin-Strasse 53,
D-81541 München
© Infineon Technologies AG 1999
All Rights Reserved.
Attention please!
The information herein is given to describe certain components and shall not be considered as warranted
characteristics.
Terms of delivery and rights to technical change reserved.
We hereby disclaim any and all warranties, including but not limited to warranties of non-infringement,
regarding circuits, descriptions and charts stated herein.
Infineon Technologies is an approved CECC manufacturer.
Information
For further information on technology, delivery terms and conditions and prices please contact your nearest
Infineon Technologies Office in Germany or our Infineon Technologies Reprensatives worldwide (see address list).
Warnings
Due to technical requirements components may contain dangerous substances.
For information on the types in question please contact your nearest Infineon Technologies Office.
Infineon Technologies Components may only be used in life-support devices or systems with the express
written approval of Infineon Technologies, if a failure of such components can reasonably be expected to
cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device
or system Life support devices or systems are intended to be implanted in the human body, or to support
and/or maintain and sustain and/or protect human life. If they fail, it is reasonable to assume that the health
of the user or other persons may be endangered.
BSO4420
Page 8
2002-02-11
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