INFINEON BSO200N03S User Manual

BSO200N03S

OptiMOS®2 Power-Transistor

Features

• Fast switching MOSFET for SMPS

• Optimized technology for notebook DC/DC

• Qualified according to JEDEC

• N-channel

• Logic level

• Excellent gate charge x R

• Very low on-resistance R

• Avalanche rated

• dv /dt rated

• Pb-free lead plating; RoHS compliant

Type Package Marking

1

for target applications

product (FOM)

DS(on)

DS(on)

Product Summary

V

DS

R

DS(on),max

I

D

PG-DSO-8

30 V

20

8.8 A

mΩ

BSO200N03S PG-DSO-8 200N3S

Maximum ratings, at T

Parameter Symbol Conditions Unit

=25 °C, unless otherwise specified

j

Value

10 secs steady state

=70 °C

=150 °C

2)

2)

3)

=25 Ω

GS

2)

8.8 7.0 A

7.1 5.6

35

17

6

±20

mJ

kV/µs

V

2.5 1.56 W

-55 ... 150

°C

Continuous drain current

Pulsed drain current

Avalanche energy, single pulse

I

D

I

D,pulse

E

AS

Reverse diode dv /dt dv /dt

Gate source voltage

Power dissipation

Operating and storage temperature

V

GS

P

tot

, T

T

j

TA=25 °C

T

A

TA=25 °C

ID=8.8 A, R

=8.8 A, VDS=20 V,

I

D

di /dt =200 A/µs,

T

j,max

TA=25 °C

stg

IEC climatic category; DIN IEC 68-1

55/150/56

Rev. 1.5 page 1 2006-05-09

BSO200N03S

Parameter Symbol Conditions Unit

Values

min. typ. max.

Thermal characteristics

Thermal resistance,
junction - soldering point

Thermal resistance,
junction - ambient

Electrical characteristics, at T

R

thJS

R

thJA

minimal footprint,

t

≤10 s

p

minimal footprint,
steady state

2

cooling area2),

6 cm

t

≤10 s

p

2

cooling area2),

6 cm
steady state

=25 °C, unless otherwise specified

j

- - 35 K/W

- - 110

- - 150

--50

--80

Static characteristics

Drain-source breakdown voltage

Gate threshold voltage

Zero gate voltage drain current

Gate-source leakage current

Drain-source on-state resistance

Gate resistance

Transconductance

1)

J-STD20 and JESD22

2)

Device on 40 mm x 40 mm x 1.5 mm epoxy PCB FR4 with 6 cm2 (one layer, 70 µm thick) copper area for drain

connection. PCB is vertical in still air.

3)

See figure 3

V

(BR)DSSVGS

V

GS(th)

I

DSS

I

GSS

R

DS(on)VGS

R

G

g

fs

=0 V, ID=1 mA

VDS=VGS, ID=10 µA

VDS=30 V, VGS=0 V,
T

=25 °C

j

V

=30 V, VGS=0 V,

DS

T

=125 °C

j

VGS=20 V, VDS=0 V

=4.5 V, ID=7.3 A

=10 V, ID=8.8 A

V

GS

|VDS|>2|ID|R

I

=8.8 A

D

DS(on)max

30 - - V

1.2 1.6 2

- 0.1 1 µA

- 10 100

- 10 100 nA

-2531

- 16.6 20

- 0.9 -

,

9.5 19 - S

mΩ

Ω

Rev. 1.5 page 2 2006-05-09

BSO200N03S

g

Parameter Symbol Conditions Unit

Values

min. typ. max.

Dynamic characteristics

Input capacitance

Output capacitance

Reverse transfer capacitance

Turn-on delay time

Rise time

Turn-off delay time

Fall time

Gate Char

e Characteristics

Gate to source charge

Gate charge at threshold

Gate to drain charge

Switching charge

4)

C

C

C

t

t

t

t

Q

Q

Q

Q

iss

oss

rss

d(on)

r

d(off)

f

gs

g(th)

gd

sw

V

=0 V, VDS=15 V,

GS

f =1 MHz

V

=15 V, VGS=10 V,

DD

=4.4 A, R

I

D

=15 V, ID=4.4 A,

V

DD

V

=0 to 5 V

GS

G

=2.7 Ω

- 630 840 pF

- 220 290

-3146

- 2.9 4.3 ns

- 2.6 3.9

-1217

- 1.8 2.7

- 1.8 2.4 nC

- 1.0 1.3

- 1.2 1.9

- 2.1 3.0

Gate charge total

Gate plateau voltage

Gate charge total, sync. FET

Output charge

Q

V

Q

Q

g

plateau

g(sync)

oss

Reverse Diode

Diode continous forward current

Diode pulse current

Diode forward voltage

Reverse recovery charge

4)

See figure 16 for gate charge parameter definition

I

S

I

S,pulse

V

SD

Q

rr

VDS=0.1 V,
V

=0 to 5 V

GS

VDD=15 V, VGS=0 V

TA=25 °C

VGS=0 V, IF=2.5 A,
T

=25 °C

j

VR=12 V, IF=IS,

di

/dt =400 A/µs

F

- 4.9 6.5

- 2.9 - V

- 4.2 5.6 nC

-57

- - 2.5 A

--35

- 0.77 1 V

--6nC

Rev. 1.5 page 3 2006-05-09