BSM 75 GAL 120 DN2
IGBT Power Module
• Single switch with chopper diode at collector
• Including fast free-wheeling diodes
• Package with insulated metal base plate
Type
V
CE
I
C
Package Ordering Code
BSM 75 GAL 120 DN2 1200V 105A HALF BRIDGE GAL 1 C67076-A2011-A70
Maximum Ratings
Parameter
Collector-emitter voltage V
Collector-gate voltage
R
= 20 k
GE
Ω
Gate-emitter voltage V
DC collector current
T
= 25 °C
C
T
= 80 °C
C
Pulsed collector current, tp = 1 ms
T
= 25 °C
C
T
= 80 °C
C
Power dissipation per IGBT
T
= 25 °C
C
Symbol Values Unit
1200 V
V
CE
CGR
1200
GE
I
C
± 20
105
75
I
Cpuls
210
150
P
tot
625
A
W
Chip temperature T
Storage temperature T
Thermal resistance, chip case R
Diode thermal resistance, chip case R
Diode thermal resistance, chip-case,chopper R
Insulation test voltage, t = 1min. V
j
stg
thJC
thJC
THJC
is
D
DC
+ 150 °C
-40 ... + 125
≤ 0.2 K/W
≤ 0.5
≤
0.36
2500 Vac
Creepage distance - 20 mm
Clearance - 11
DIN humidity category, DIN 40 040 - F sec
IEC climatic category, DIN IEC 68-1 - 40 / 125 / 56
1 Nov-24-1997
BSM 75 GAL 120 DN2
Electrical Characteristics, at Tj = 25 °C, unless otherwise specified
Parameter
Static Characteristics
Gate threshold voltage
V
GE
= V
CE, IC
= 2 mA
Collector-emitter saturation voltage
V
= 15 V, IC = 75 A, Tj = 25 °C
GE
V
= 15 V, IC = 75 A, Tj = 125 °C
GE
Zero gate voltage collector current
V
= 1200 V, VGE = 0 V, Tj = 25 °C
CE
V
= 1200 V, VGE = 0 V, Tj = 125 °C
CE
Gate-emitter leakage current
V
= 20 V, VCE = 0 V
GE
AC Characteristics
Symbol Values Unit
min. typ. max.
V
GE(th)
V
4.5 5.5 6.5
V
CE(sat)
I
CES
I
GES
-
-
-
-
2.5
3.1
1
4
3
3.7
mA
1.4
nA
- - 400
Transconductance
V
= 20 V, IC = 75 A
CE
Input capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Output capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
Reverse transfer capacitance
V
= 25 V, VGE = 0 V, f = 1 MHz
CE
g
C
C
C
fs
iss
oss
rss
S
31 - -
nF
- 5.5 -
- 0.8 -
- 0.3 -
2 Nov-24-1997
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