INFINEON BSM50GB120DLC User Manual
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Höchstzulässige Werte / Maximum rated values
Elektrische Eigenschaften / Electrical properties
Kollektor-Emitter-Sperrspannung
collector-emitter voltage
Kollektor-Dauergleichstrom
DC-collector current
Periodischer Kollektor Spitzenstrom
repetitive peak collector current
Gesamt-Verlustleistung
total power dissipation
Gate-Emitter-Spitzenspannung
gate-emitter peak voltage
Dauergleichstrom
DC forward current
Periodischer Spitzenstrom
repetitive peak forw. current
Grenzlastintegral der Diode
2
I
t - value, Diode
T
= 25° C V
vj
= 80 °C I
T
C
= 25 °C I
T
C
t
= 1 ms, TC = 80°C I
P
T
=25°C, Transistor P
C
t
= 1 ms I
P
= 0V, tp = 10ms, TVj = 125°C
V
R
CES
C,nom.
CRM
V
GES
I
FRM
2
I
1200 V
50 A
C
115 A
100 A
tot
460 W
+/- 20V V
F
50 A
100 A
t
430
A2s
Isolations-Prüfspannung
insulation test voltage
RMS, f = 50 Hz, t = 1 min.
Charakteristische Werte / Characteristic values
Transistor / Transistor
I
= 50A, VGE = 15V, Tvj = 25°C V
Kollektor-Emitter Sättigungsspannung
collector-emitter saturation voltage
Gate-Schwellenspannung
gate threshold voltage
Gateladung
gate charge
Eingangskapazität
input capacitance
Rückwirkungskapazität
reverse transfer capacitance
Kollektor-Emitter Reststrom
collector-emitter cut-off current
Gate-Emitter Reststrom
gate-emitter leakage current
C
= 50A, VGE = 15V, Tvj = 125°C
I
C
I
= 2mA, VCE = VGE, Tvj = 25°C V
C
V
= -15V...+15V Q
GE
f = 1MHz,T
f = 1MHz,T
V
CE
V
CE
= 25°C,VCE = 25V, VGE = 0V C
vj
= 25°C,VCE = 25V, VGE = 0V C
vj
= 1200V, VGE = 0V, Tvj = 25°C I
= 0V, VGE = 20V, Tvj = 25°C I
V
ISOL
min. typ. max.
CE sat
GE(th)
res
CES
GES
- 2,1 2,6 V
- 2,4 2,9 V
4,5 5,5 6,5 V
- 0,53 - µC
G
- 3,3 - nF
ies
- 0,21 - nF
--
- - 400 nA
2,5 kV
5mA
prepared by: MOD-D2, Mark Münzer date of publication: 2003-01-10
approved by: SM TM; Wilhelm Rusche revision: 3.0
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DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Charakteristische Werte / Characteristic values
Transistor / Transistor
= 50A, VCE = 600V
I
Einschaltverzögerungszeit (ind. Last)
turn on delay time (inductive load)
Anstiegszeit (induktive Last)
rise time (inductive load)
Abschaltverzögerungszeit (ind. Last)
turn off delay time (inductive load)
Fallzeit (induktive Last)
fall time (inductive load)
Einschaltverlustenergie pro Puls
turn-on energy loss per pulse
Abschaltverlustenergie pro Puls
turn-off energy loss per pulse
Kurzschlußverhalten
SC Data
Modulinduktivität
stray inductance module
C
V
= ±15V, RG = 15Ω, Tvj = 25°C t
GE
V
= ±15V, RG = 15Ω, Tvj = 125°C
GE
I
= 50A, VCE = 600V
C
V
= ±15V, RG = 15Ω, Tvj = 25°C t
GE
V
= ±15V, RG = 15Ω, Tvj = 125°C
GE
I
= 50A, VCE = 600V
C
V
= ±15V, RG = 15Ω, Tvj = 25°C t
GE
VGE = ±15V, RG = 15Ω, Tvj = 125°C
I
= 50A, VCE = 600V
C
V
= ±15V, RG = 15Ω, Tvj = 25°C t
GE
V
= ±15V, RG = 15Ω, Tvj = 125°C
GE
I
= 50A, VCE = 600V, VGE = ±15V
C
R
= 15Ω, Tvj = 125°C, Lσ = 120nH E
G
IC = 50A, VCE = 600V, VGE = 15V
R
= 15Ω, Tvj = 125°C, Lσ = 120nH E
G
tP ≤ 10µs, VGE ≤ 15V, RG = 15Ω
T
≤125°C, VCC=900V, V
Vj
CEmax=VCES -LσCE
·di/dt I
min. typ. max.
d,on
d,off
SC
L
σCE
- 0,05 - µs
- 0,06 - µs
- 0,05 - µs
r
- 0,05 - µs
- 0,25 - µs
- 0,30 - µs
- 0,03 - µs
f
- 0,07 - µs
- 6,4 - mJ
on
- 6,2 - mJ
off
- 400 - A
- 40 - nH
Modul Leitungswiderstand, Anschlüsse – Chip
module lead resistance, terminals – chip
T
=25°C R
C
Charakteristische Werte / Characteristic values
Diode / Diode
= 50A, VGE = 0V, Tvj = 25°C V
I
Durchlaßspannung
forward voltage
Rückstromspitze
peak reverse recovery current
Sperrverzögerungsladung
recovered charge
Abschaltenergie pro Puls
reverse recovery energy
F
= 50A, VGE = 0V, Tvj = 125°C
I
F
I
= 50A, - diF/dt = 1300A/µs
F
V
= 600V, VGE = -15V, Tvj = 25°C I
R
V
= 600V, VGE = -15V, Tvj = 125°C
R
I
= 50A, - diF/dt = 1300A/µs
F
V
= 600V, VGE = -15V, Tvj = 25°C Q
R
V
= 600V, VGE = -15V, Tvj = 125°C
R
I
= 50A, - diF/dt = 1300A/µs
F
V
= 600V, VGE = -15V, Tvj = 25°C E
R
V
= 600V, VGE = -15V, Tvj = 125°C
R
CC‘+EE‘
- 1,0 - mΩ
min. typ. max.
- 1,8 2,3 V
F
- 1,7 2,2 V
RM
rec
-52- A
-66- A
- 5,1 - µC
r
- 10,7 - µC
- 1,9 - mJ
-4-mJ
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DB_BSM50GB120DLC_3.0
2003-01-10
Technische Information / Technical Information
IGBT-Module
IGBT-Modules
BSM50GB120DLC
Thermische Eigenschaften / Thermal properties
Innerer Wärmewiderstand
thermal resistance, junction to case
Übergangs-Wärmewiderstand
thermal resistance, case to heatsink
Höchstzulässige Sperrschichttemperatur
maximum junction temperature
Betriebstemperatur
operation temperature
Lagertemperatur
storage temperature
Transistor / transistor, DC
Diode/Diode, DC - - 0,60 K/W
pro Modul / per module
λ
= 1 W/m * K / λ
Παστε
= 1 W/m * K
grease
Mechanische Eigenschaften / Mechanical properties
T
min. typ. max.
R
R
T
T
thJC
thCK
vj max
vj op
stg
- - 0,27 K/W
- 0,05 - K/W
- - 150 °C
-40 - 125 °C
-40 - 125 °C
Gehäuse, siehe Anlage
case, see appendix
Innere Isolation
internal insulation
Kriechstrecke
creepage distance
Luftstrecke
clearance distance
CTI
comperative tracking index
Anzugsdrehmoment f. mech. Befestigung
mounting torque
Anzugsdrehmoment f. elektr. Anschlüsse
terminal connection torque
Gewicht
weight
MSchraube / screw M6
Anschlüsse / terminals M5 M
G 250 g
Al
275
3,0 6,0-
2,5 5,0-
2O3
20 mm
11 mm
Nm
Nm
Mit dieser technischen Information werden Halbleiterbauelemente spezifiziert, jedoch keine Eigenschaften zugesichert.
Sie gilt in Verbindung mit den zugehörigen Technischen Erläuterungen.
This technical information specifies semiconductor devices but promises no characteristics. It is
valid in combination with the belonging technical notes.
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DB_BSM50GB120DLC_3.0
2003-01-10
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