INFINEON BCW65, BCW66 User Manual
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NPN Silicon AF Transistor
BCW65, BCW66
For general AF applications
High current gain
Low collector-emitter saturation voltage
Complementary types: BCW67, BCW68 (PNP)
1
Type Marking Pin Configuration Package
3
BCW65A
BCW65B
BCW65C
BCW66F
BCW66G
EAs
EBs
ECs
EFs
EGs
1 = B
1 = B
1 = B
1 = B
1 = B
2 = E
2 = E
2 = E
2 = E
2 = E
3 = C
3 = C
3 = C
3 = C
3 = C
SOT23
SOT23
SOT23
SOT23
SOT23
2
VPS05161
BCW66H
EHs
1 = B
2 = E
3 = C
Maximum Ratings
Parameter
Collector-emitter voltage
Collector-base voltage
Emitter-base voltage
DC collector current
Peak collector current
Base current mA100
Peak base current
Total power dissipation, T
= 79 °C P
S
Junction temperature
Storage temperature
Symbol
V
CEO
V
CBO
V
EBO
I
C
I
CM
I
B
I
BM
tot
T
j
T
st
BCW65 BCW66
32 45 V
60 75
5 5
800 mA
1 A
200
330 mW
150 °C
-65 ... 150
Thermal Resistance
Junction - soldering point
1)
R
thJS
215 K/W
SOT23
Unit
1
For calculation of R
please refer to Application Note Thermal Resistance
thJA
1 Jul-10-2001
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BCW65, BCW66
Parameter
DC Characteristics
Collector-emitter breakdown voltage
= 10 mA, IB = 0
I
C
Collector-base breakdown voltage
= 10 µA, IB = 0
I
C
Emitter-base breakdown voltage
= 10 µA, IC = 0
I
E
Collector cutoff current
= 32 V, IE = 0
V
CB
= 45 V, IE = 0
V
CB
Collector cutoff current
= 32 V, IE = 0 , TA = 150 °C
V
CB
= 45 V, IE = 0 , TA = 150 °C
V
CB
BCW65
BCW66
BCW65
BCW66
BCW65
BCW66
BCW65
BCW66
Symbol Values Unit
min. typ. max.
V
(BR)CEO
V
(BR)CBO
V
(BR)EBO
I
CBO
I
CBO
32
45
60
75
5 - -
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
-
20
20
20
20
V
nA
µA
Emitter cutoff current
= 4 V, IC = 0
V
EB
DC current gain 1)
= 100 µA, VCE = 10 V
I
C
DC current gain 1)
= 10 mA, VCE = 1 V
I
C
DC current gain 1)
= 100 mA, VCE = 1 V
I
C
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
h
FE
-grp.A/F
-grp.B/G
-grp.C/H
-grp.A/F
-grp.B/G
-grp.C/H
-grp.A/F
-grp.B/G
-grp.C/H
I
EBO
h
FE
h
FE
h
FE
- - 20 nA
35
50
80
75
110
180
100
160
250
-
-
-
-
-
-
160
250
350
-
-
-
-
-
-
250
400
630
-
1) Pulse test: t ≤ 300µs, D = 2%
2 Jul-10-2001
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