INFINEON BCW61, BCX71 User Manual

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PNP Silicon AF Transistor



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types: BCW60, BCX70 (NPN)

BCW61, BCX71

3

1

2

VPS05161

Type Marking Pin Configuration Package

BCW 61A BCW 61B BCW 61C BCW 61D BCW 61FF BCW 61FN BCX 71G BCX 71H BCX 71J BCX 71K

BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs

1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B

2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E

3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

1 Jul-10-2001

Maximum Ratings

g

BCW61, BCX71

Parameter

Collector-emitter voltage Collector-base voltage Emitter-base voltage

DC collector current Peak collector current 200 mA

Peak base current 200 Total power dissipation, TS = 71 °C P

Junction temperature Storage temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

CM

I

BM

tot

T

j

T

st

BCW61 BCW61FF BCX71

32 32 45 V 32 32 45

5 5 5

150 °C

-65 ... 150

Unit

mA100

mW330

Thermal Resistance

Junction - soldering point

1)

R

thJS



240 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

BCW61/61FF BCX71

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

32 45

-

5 - -

V

-

2 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCW61, BCX71

Parameter

AC Characteristics

Collector cutoff current

= 32 V, IE = 0

V

CB

= 45 V, IE = 0

V

CB

Collector cutoff current

= 32 V, IE = 0 , TA = 150 °C

V

CB

= 45 V, IE = 0 , TA = 150 °C

V

CB

Emitter cutoff current

V

= 4 V, IC = 0

EB

DC current gain 1)

= 10 µA, VCE = 5 V

I

C

BCW61/61FF BCX71

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

Symbol Values Unit

min. typ. max.

I

CBO

I

CBO

I

EBO

h

FE

-

- - 20 nA

20 30 40

100

-

140 200 300 460

20 20

-

nA

µA

-

DC current gain 1)

= 2 mA, VCE = 5 V

I

C

DC current gain 1)

= 50 mA, VCE = 1 V

I

C

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

h

FE

120 180 250 380

h

FE

60

80 100 110

170 250 350 500

-

220 310 460 630

-

1) Pulse test: t ≤=300µs, D = 2%

3 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCW61, BCX71

Parameter

Characteristics

Collector-emitter saturation voltage1)

I

= 10 mA, IB = 0.25 mA

C

= 50 mA, IB = 1.25 mA

I

C

Base-emitter saturation voltage 1)

= 10 mA, IB = 0.25 mA

I

C

= 50 mA, IB = 1.25 mA

I

C

Base-emitter voltage 1)

= 10 µA, VCE = 5 V

I

C

I

= 2 mA, VCE = 5 V

C

= 50 mA, VCE = 1 V

I

C

AC Characteristics

Transition frequency

I

= 20 mA, VCE = 5 V, f = 100 MHz

C

Symbol Values Unit

min. typ. max.

V

CEsat

V

BEsat

V

BE(ON)

f

T

-

0.55

-

- 250 - MHz

0.12

0.2

0.7

0.83

0.52

0.65

0.78

0.25

0.55

0.85

1.05

-

0.75

-

V

Collector-base capacitance

V

= 10 V, f = 1 MHz

CB

Emitter-base capacitance

V

= 0.5 V, f = 1 MHz

EB

Short-circuit input impedance

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Open-circuit reverse voltage transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

hFE-grp.

A/G B/H C/J/FF D/K/FN

hFE-grp.

A/G B/H C/J/FF D/K/FN

C

h

cb

eb

11e

12e

- 3 - pF

- 8 -

-

2.7

3.6

4.5

7.5

1.5 2 2 3

k



-

10

-

-4

1) Pulse test: t ≤=300µs, D = 2%

4 Jul-10-2001

BCW61, BCX71

Electrical Characteristics at

T

= 25°C, unless otherwise specified.

A

Parameter

AC Characteristics

Short-circuit forward current transf.ratio

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Open-circuit output admittance

I

= 2 mA, VCE = 5 V, f = 1 kHz

C

Noise figure

hFE-grp.

A/G B/H C/J/FF D/K/FN

hFE-grp.

A/G B/H C/J/FF D/K/FN

hFE-grp.

Symbol Values Unit

min. typ. max.

h

F

21e

22e

-

200 260 330 520

18 24 30 50

-



S

-

dB

I

= 200 µA, VCE = 5 V, RS = 1 k,

C

f = 1 kHz,  f = 200 Hz

Equivalent noise voltage

I

= 200 µA, VCE = 5 V, RS = 2 k,

C

f = 10 ... 50 Hz

A/K FF/FN

hFE-grp.

FF/FN

V

-

n

- - 0.11 µV

2 1

-

2

5 Jul-10-2001

BCW61, BCX71

)

Total power dissipation P

360

mW

300 270 240

tot

P

210 180 150 120

90 60 30

0

0 15 30 45 60 75 90 105 120

= f(TS)

tot

°C

T

Collector-base capacitance Emitter-base capacitance CEB = f (V

12

C

CBO

pF

)(

C

EBO

C

CB

= f (V

EBO

EHP00344BCW 61/BCX 71

CBO

)

10

8

C

EBO

6

4

C

CBO

2

0

150

S

-1 1

10

0

VV

CBO

EBO

10V10

)(

Permissible pulse load

P

totmax

P

totmax totPDC

10

/ P

5

= f (tp)

totDC

3

2

1

0

-6

10

10-510-410-310

=

D

Transition frequency fT = f (IC)

V

= 5V

CE

EHP00345BCW 61/BCX 71

t

p

t

p

T

D

=

3

10

MHz

f

T

5

0

0.005

0.01

0.02

0.05

10

2

0.1

0.2

5

1

10

03

10

1

10

55

10

-2

0.5

0

10

s

t

p

EHP00347BCW 61/BCX 71

2

10mA

Ι

C

6 Jul-10-2001

BCW61, BCX71

Base-emitter saturation voltage

I

= f (V

C

Ι

C

10 mA

10

2

1

5

0

5

-1

0

), hFE = 40

BEsat

100

˚C ˚C

25

-50

˚C

0.2 0.4 0.8

0.6 V 1.2

V

EHP00348BCW 61/BCX 71

BE sat

Collector-emitter saturation voltage

I

= f (V

C

Ι

C

10

mA

10

5

10

5

10

2

1

0

-1

0

), hFE = 40

CEsat

100

25

-50

0.1 0.2 0.3 0.4

˚C ˚C ˚C

V

EHP00349BCW 61/BCX 71

CEsat

V 0.5

Collector current IC = f (VBE)

V

= 5V

CE

2

10

Ι

mA

C

1

10

5

0

10

5

100 25 -50

10

-1

5

-2

0

˚C

0.5 V 1.0

EHP00350BCW 61/BCX 71

˚C ˚C

V

BE

DC current gain hFE = f (IC)

V

= 5V

CE

3

10

5

100

h

FE

10

5

10

5

10

˚C

25

˚C

-50

˚C

2

1

0

-2 2

10

-1

10

0

10

EHP00351BCW 61/BCX 71

1

10mA

Ι

C

7 Jul-10-2001

BCW61, BCX71

Collector cutoff current I

V

= V

Ι

CB

CBO

10

nA

10

CEmax

4

3

2

1

0

-1

0

max

typ

50 100

CBO

= f (TA)

EHP00352BCW 61/BCX 71

C

T

A

150

h parameter

V

= 5V

CE

2

10

h

e

h

11e

1

10

5

h

12e

0

10

5

h

21e

-1

10

-1 1

10

h

= f (IC) normalized

e

V

CE

h

22e

0

10

5

= 5 V

EHP00353BCW 61/BCX 71

10mA

Ι

C

h parameter he = f (VCE) normalized

I

= 2mA

C

2.0

h

e

Ι

= 2 mA

C

1.5

1.0

0.5

0

10 20

EHP00354BCW 61/BCX 71

h

V

CE

Noise figure F = f (VCE)

I

= 0.2mA, RS = 2k, f = 1kHz

C

20

dB

F

11

15

10

12

22

5

30

0

-1 2

10

0

10

EHP00355BCW 61/BCX 71

1

10V

V

CE

8 Jul-10-2001

BCW61, BCX71

Noise figure F = f (f)

I

= 0.2mA, VCE = 5V, RS = 2k

C

20

F

dB

15

10

5

0

-2 2

10

-1

10

0



10

Noise figure

V

= 5V, f = 120Hz

CE

EHP00356BCW 61/BCX 71

20

dB

F

15

F = f (I

R

= 1 M

S

)

C

EHP00357BCW 61/BCX 71

Ω

100 k

Ω

10 k

Ω

10

Ω

500

5

Ω

1 k

0

1

10kHz

-3 1

10

f

10

-2

10

-1

10

0

10mA

Ι

C

Noise figure F = f (IC)

V

= 5V, f = 1kHz

CE

20

dB

F

15

10

5

0

-3 1

10

R

-2

= 1 M

S

10

Ω

-1

EHP00358BCW 61/BCX 71

100 kΩ10 k

500

0

10

Ι

C

1k

Noise figure F = f (IC)

V

= 5V, f = 10kHz

CE

10

0

EHP00359BCW 61/BCX 71

100 k

10 k

Ι

C

Ω

10mA

20

dB

F

Ω

= 1 M

R

Ω

15

S

10

Ω

500

Ω

5

Ω

0

10mA

10

1 k

-3 1

10

-2

10

-1

9 Jul-10-2001

INFINEON BCW61, BCX71 User Manual

Specifications and Main Features

Frequently Asked Questions

User Manual