INFINEON BCW61, BCX71 User Manual

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PNP Silicon AF Transistor



For AF input stages and driver applications



High current gain



Low collector-emitter saturation voltage



Low noise between 30 Hz and 15 kHz



Complementary types: BCW60, BCX70 (NPN)

BCW61, BCX71

3

1

2

VPS05161

Type Marking Pin Configuration Package

BCW 61A BCW 61B BCW 61C BCW 61D BCW 61FF BCW 61FN BCX 71G BCX 71H BCX 71J BCX 71K

BAs BBs BCs BDs BFs BNs BGs BHs BJs BKs

1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B 1 = B

2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E 2 = E

3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C 3 = C

SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23 SOT23

1 Jul-10-2001

Maximum Ratings

g

BCW61, BCX71

Parameter

Collector-emitter voltage Collector-base voltage Emitter-base voltage

DC collector current Peak collector current 200 mA

Peak base current 200 Total power dissipation, TS = 71 °C P

Junction temperature Storage temperature

Symbol

V

CEO

V

CBO

V

EBO

I

C

I

CM

I

BM

tot

T

j

T

st

BCW61 BCW61FF BCX71

32 32 45 V 32 32 45

5 5 5

150 °C

-65 ... 150

Unit

mA100

mW330

Thermal Resistance

Junction - soldering point

1)

R

thJS



240 K/W

Electrical Characteristics at TA = 25°C, unless otherwise specified. Parameter

Symbol Values Unit

min. typ. max.

DC Characteristics

Collector-emitter breakdown voltage

I

= 10 mA, IB = 0

C

Collector-base breakdown voltage

I

= 10 µA, IB = 0

C

BCW61/61FF BCX71

Emitter-base breakdown voltage

I

= 1 µA, IC = 0

E

1

For calculation of

R

please refer to Application Note Thermal Resistance

thJA

V

(BR)CEO

V

(BR)CBO

V

(BR)EBO

32 45

-

5 - -

V

-

2 Jul-10-2001

Electrical Characteristics at TA = 25°C, unless otherwise specified.

BCW61, BCX71

Parameter

AC Characteristics

Collector cutoff current

= 32 V, IE = 0

V

CB

= 45 V, IE = 0

V

CB

Collector cutoff current

= 32 V, IE = 0 , TA = 150 °C

V

CB

= 45 V, IE = 0 , TA = 150 °C

V

CB

Emitter cutoff current

V

= 4 V, IC = 0

EB

DC current gain 1)

= 10 µA, VCE = 5 V

I

C

BCW61/61FF BCX71

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

Symbol Values Unit

min. typ. max.

I

CBO

I

CBO

I

EBO

h

FE

-

- - 20 nA

20 30 40

100

-

140 200 300 460

20 20

-

nA

µA

-

DC current gain 1)

= 2 mA, VCE = 5 V

I

C

DC current gain 1)

= 50 mA, VCE = 1 V

I

C

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

hFE-grp. A/G h

-grp. B/H

FE

h

-grp. C/J/FF

FE

h

-grp. D/K/FN

FE

h

FE

120 180 250 380

h

FE

60

80 100 110

170 250 350 500

-

220 310 460 630

-

1) Pulse test: t ≤=300µs, D = 2%

3 Jul-10-2001