INFINEON BAT 68-08S User Manual
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Silicon Schottky Diode Array
BAT 68-08S
Preliminary data
• For mixer applications in the VHF / UHF range
• For high-speed switching applications
6
4
5
Tape loading orientation
Top View
456
W1s
123
Direction of Unreeling
Marking on SOT-363 package
(for example W1s)
corresponds to pin 1 of device
Position in tape: pin 1
opposite of feed hole side
EHA07193
C1 C2 C3
6 54
321
A3A2A1
EHA07291
1
VPS05604
ESD: Electrostatic discharge sensitive device, observe handling precautions!
Type Marking Pin Configuration Package
BAT 68-08S 83s 1=A1 2=A2 3=A3 4=C3 5=C2 6=C1 SOT-363
3
2
Maximum Ratings
Parameter Symbol Value Unit
Diode reverse voltage
Forward current 130
Total power dissipation, TS ≤ 40°C P
Junction temperature 150 °C
Storage temperature
V
I
T
T
R
F
tot
j
st
150
-55 ... 150
V8
mA
mW
Thermal Resistance
Junction - ambient
1)
Junction - soldering point
R
R
thJA
thJS
≤ 640
≤ 390
K/W
1) Package mounted on alumina 15mm x 16.7mm x 0.7mm
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAT 68-08S
Parameter
Characteristics
I
= 10 µA
(BR)
V
= 1 V
R
V
= 1 V, TA = 150 °C
R
I
= 1 mA
F
I
= 10 mA
F
AC characteristics
Diode capacitance
= 0 V, f = 1 MHz
V
R
Symbol Values Unit
min. typ. max.
V
I
I
V
C
R
R
(BR)
F
T
8
-
330
-
-
- 1.2-Reverse current
318
390
- 1
340
500
V-Breakdown voltage
µA- 0.1-Reverse current
mVForward voltage
pF
Forward resistance
= 5 mA, f = 100 MHz
I
F
R
f
- - 10
Ω
Oct-07-19992
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