INFINEON BAT 66-05 User Manual
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查询BAT 66-05供应商
Silicon Schottky Diode
• Low-power Schottky rectifier diode
BAT 66-05
• For low-loss, fast-recovery rectification,
4
meter protection, bias isolation and
clamping purpose
1
2, 4
1
Type Marking Pin Configuration Package
BAT 66-05 BAT 66-05 1 = A1 2=C1/C2 3 = A2 4=C1/C2 SOT-223
Maximum Ratings
Parameter
Diode reverse voltage
Forward current
Average forward current (50/60Hz, sinus)
Surge forward current, t ≤ 10ms I
Total power dissipation, TS ≤ 126 °C P
Junction temperature
Storage temperature
Symbol Value Unit
V
R
I
F
I
FAV
FSM
tot
T
j
T
st
-55 ... 150
3
EHA00005
40 V
2 A
1
10
1.2 W
150 °C
3
2
VPS05163
Maximum Ratings
Junction - ambient
Junction - soldering point
1) Package mounted on epoxy pcb 40mm x 40mm x 1.5mm / 6cm2 Cu
1)
R
R
thJA
thJS
≤ 160
≤ 20
K/W
Oct-07-19991
Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAT 66-05
Parameter
DC characteristics
Reverse current
V
= 25 V
R
Reverse current
V
= 25 V, TA = 85 °C
R
Forward voltage
I
= 1 mA
F
I
= 100 mA
F
I
= 1 A
F
AC characteristics
Diode capacitance
V
= 10 V, f = 1 MHz
R
Symbol Values Unit
min. typ. max.
I
I
V
C
R
R
F
T
- - 10 µA
- 1 mA
-
-
-
-
0.28
0.35
0.47
0.35
-
0.6
V
- 30 40 pF
Forward current I
T
= Parameter
A
BAT 66-05 EHB00062
3
10
mA
Ι
R
2
10
1
10
0
10
-1
10
0 0.5 0.75
0.25
= f (VF)
F
T
= 25 ˚C
A
85 ˚C
Reverse current I
T
= Parameter
A
BAT 66-05 EHB00063
4
10
A
µ
Ι
R
3
10
2
10
1
10
0
10
-1
V
V
F
10
0102030
T
= 125 ˚C
A
= f (VR)
R
85 ˚C
25 ˚C
V
V
R
Oct-07-19992
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