
查询BAT 62-03W供应商
Silicon Schottky Diode
Low barrier diode for detectors up to GHz
frequencies
BAT 62-03W
2
1
VPS05176
ESD: Electrostatic discharge sensitive device, observe handling precaution!
Type Marking Pin Configuration Package
BAT 62-03W L 1 = C 2 = A SOD-323
Maximum Ratings
Symbol
Diode reverse voltage V40
Total power dissipation, TS 85 °C
Junction temperature 150 °C
V
I
P
T
T
R
F
tot
j
st
ValueParameter Unit
40Forward current mA
150
-55 ... 150Storage temperature
mW
Thermal Resistance
Junction - ambient
Junction - soldering point
1)
R
R
thJA
thJS
650
810
K/W
1) Package mounted on epoxy pcb 15mm x 16.7mm x 0.7mm
Oct-07-19991

Electrical Characteristics at TA = 25°C, unless otherwise specified.
BAT 62-03W
Parameter
DC characteristics
V
= 40 V
R
I
= 2 mA
F
AC characteristics
Diode capacitance
V
= 1 V, f = 1 MHz
R
Case capacitance
f = 1 MHz
Differential resistance
V
= 0 , f = 10 kHz
R
Series inductance
I
V
C
C
R
L
ValuesSymbol Unit
typ. max.min.
R
F
T
C
0
s
- 0.58
- 0.1 -
- 225 -
- 1.8 - nH
--
0.35-
0.6
µA10Reverse current
VForward voltage
1
pF
k
Oct-07-19992